公开(公告)号：US10014182B2

公开(公告)日：2018-07-03

申请号：US15263734

申请日：2016-09-13

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yuriko Seino

IPC: H01L21/308 ,  H01L21/027 ,  B81C1/00 ,  H01L21/033 ,  H01L21/311

CPC classification number: H01L21/3086 ,  B81C1/00007 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3088 ,  H01L21/31144

Abstract: According to one embodiment, a pattern formation method includes forming a base structure including first and second guide portions each including a pinning portion, and a neutral portion, forming a block copolymer film containing first and second polymers on the bass structure, performing a predetermined treatment for the block copolymer film, thereby forming first and second pattern portions formed of the first polymer, forming third and fourth pattern portions formed of the second polymer, and forming a fifth pattern portion formed of the first and second polymers. The fifth pattern portion includes a plurality of first portions formed of the second polymer, and a second portion formed of the first polymer and provided on the neutral portion and the first portions.

公开(公告)号：US20170306074A1

公开(公告)日：2017-10-26

申请号：US15515812

申请日：2015-09-30

Applicant: LG Chem, Ltd.

Inventor： Jeong Kyu Lee ,  Je Gwon Lee ,  In Young Song ,  Sung Joon Oh ,  Yeon Joo Kang ,  Sung Soo Yoon ,  Jung Keun Kim

IPC: C08F293/00 ,  G03F7/20 ,  G03F7/039 ,  G03F7/30 ,  C09D153/00

CPC classification number: C08L53/005 ,  B05D1/005 ,  B05D3/007 ,  B81C1/00428 ,  B81C2201/0149 ,  B82Y40/00 ,  C01P2002/70 ,  C07B2200/00 ,  C08F2/14 ,  C08F12/20 ,  C08F32/06 ,  C08F212/08 ,  C08F216/12 ,  C08F216/125 ,  C08F220/10 ,  C08F220/26 ,  C08F220/30 ,  C08F293/00 ,  C08F293/005 ,  C08F299/024 ,  C08F2220/301 ,  C08F2438/03 ,  C08G61/08 ,  C08G61/12 ,  C08G2261/1424 ,  C08G2261/1426 ,  C08G2261/332 ,  C08G2261/3324 ,  C08G2261/40 ,  C08G2261/418 ,  C08J5/18 ,  C08J7/123 ,  C08J2353/00 ,  C08L53/00 ,  C08L53/02 ,  C09D153/00 ,  G03F7/0002 ,  G03F7/0046 ,  G03F7/039 ,  G03F7/091 ,  G03F7/16 ,  G03F7/162 ,  G03F7/165 ,  G03F7/2004 ,  G03F7/30 ,  H01L21/0273 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31058 ,  C08F214/182

Abstract: The present application relates to a block copolymer and its use. The present application can provides a block copolymer that has an excellent self assembling property or phase separation property and therefore can be used in various applications and its use.

公开(公告)号：US09780167B2

公开(公告)日：2017-10-03

申请号：US14908930

申请日：2014-07-14

Applicant: GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Myung Han Yoon ,  Se Yeong Lee

IPC: H01L29/06 ,  B81C1/00 ,  H01L21/02 ,  H01L21/306 ,  H01L21/3205 ,  H01L29/16

CPC classification number: H01L29/0676 ,  B81B2203/0361 ,  B81C1/00031 ,  B81C2201/0133 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02118 ,  H01L21/022 ,  H01L21/02282 ,  H01L21/30604 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/32051 ,  H01L29/16

Abstract: Provided is a method for manufacturing a silicon nanowire array comprising the steps of: positioning plastic particles separated apart from one another in a uniform random pattern on a silicon substrate; forming a catalyst layer between the plastic particles; removing the plastic particles; vertically etching portions of the silicon substrate that contact the catalyst layer; and removing the catalyst layer. The present invention provides a simple and cost-effective process, enables mass-production through large surface area processing, enables the manufacture of nanowire even at a site having limited resources, and enables the structures of nanowire to be individually controlled.

公开(公告)号：US20170240681A1

公开(公告)日：2017-08-24

申请号：US15439604

申请日：2017-02-22

Applicant: Board of Regents The University of Texas System

Inventor： Carlton Grant Willson ,  Gregory Blachut ,  Michael Maher ,  Yusuke Asano ,  Christopher John Ellison

IPC: C08F297/00 ,  B05D7/00 ,  H01L21/027 ,  B05D7/26 ,  G03F7/00 ,  C09D153/00 ,  B05D3/10

CPC classification number: C08F297/00 ,  B05D3/108 ,  B05D7/26 ,  B05D7/542 ,  B81C2201/0149 ,  B82Y40/00 ,  C09D153/00 ,  G03F7/0002 ,  H01L21/0271

Abstract: The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.

公开(公告)号：US09718250B2

公开(公告)日：2017-08-01

申请号：US13619525

申请日：2012-09-14

Applicant: Paul Franklin Nealey ,  Huiman Kang ,  Guoliang Liu ,  Hiroshi Yoshida ,  Yashuhiko Tada ,  Juan Jose De Pablo ,  Abelardo Ramirez-Hernandez

Inventor： Paul Franklin Nealey ,  Huiman Kang ,  Guoliang Liu ,  Hiroshi Yoshida ,  Yashuhiko Tada ,  Juan Jose De Pablo ,  Abelardo Ramirez-Hernandez

IPC: B32B3/10 ,  B32B37/14 ,  B82Y30/00 ,  B81C1/00 ,  H01L21/033

CPC classification number: B32B3/10 ,  B32B37/14 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002 ,  H01L21/0337 ,  Y10T428/24851

Abstract: Provided are methods of fabricating thin film structures that involve assembling block copolymer materials in the presence of condensed phase surfaces on both sides of the thin film, at least one of which is a chemically patterned surface configured to direct the assembly of the block copolymer material. According to various embodiments, the other of the condensed phase surfaces can be a chemically homogenous surface or a chemically patterned surface. Also provided are structures, morphologies, and templates formed in the domain structure of block copolymer materials. In certain embodiments, complex 3-D morphologies and related structures not present in bulk block copolymer materials are provided.

公开(公告)号：US09718094B2

公开(公告)日：2017-08-01

申请号：US14845488

申请日：2015-09-04

Applicant: Thomas P. Russell ,  Sung Woo Hong ,  Dong Hyun Lee ,  Soojin Park ,  Ting Xu

Inventor： Thomas P. Russell ,  Sung Woo Hong ,  Dong Hyun Lee ,  Soojin Park ,  Ting Xu

IPC: B32B3/00 ,  B05D3/04 ,  B81C1/00 ,  B05D3/10 ,  G03F7/00 ,  B05D5/02 ,  B05D3/02

CPC classification number: B05D3/0466 ,  B05D3/0254 ,  B05D3/10 ,  B05D3/107 ,  B05D5/02 ,  B81C1/00031 ,  B81C1/00055 ,  B81C1/00063 ,  B81C1/00071 ,  B81C1/00079 ,  B81C2201/0149 ,  G03F7/0002 ,  Y10T428/24521

Abstract: A block copolymer film having a line pattern with a high degree of long-range order is formed by a method that includes forming a block copolymer film on a substrate surface with parallel facets, and annealing the block copolymer film to form an annealed block copolymer film having linear microdomains parallel to the substrate surface and orthogonal to the parallel facets of the substrate. The line-patterned block copolymer films are useful for the fabrication of magnetic storage media, polarizing devices, and arrays of nanowires.

公开(公告)号：US09696628B2

公开(公告)日：2017-07-04

申请号：US15067951

申请日：2016-03-11

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yusuke Kasahara ,  Hideki Kanai

IPC: G03F7/40 ,  H01L21/027 ,  H01L21/3105 ,  H01L21/02 ,  G03F7/00 ,  H01L21/311 ,  B81C1/00 ,  G03F7/16 ,  G03F7/11 ,  G03F7/20 ,  H01L21/033

CPC classification number: G03F7/40 ,  B81C1/00031 ,  B81C2201/0149 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/0035 ,  G03F7/11 ,  G03F7/165 ,  G03F7/2016 ,  H01L21/02118 ,  H01L21/02318 ,  H01L21/0271 ,  H01L21/0273 ,  H01L21/033 ,  H01L21/0337 ,  H01L21/31058 ,  H01L21/31144

Abstract: According to one embodiment, a pattern forming method includes forming a resist pattern on an under-layer, forming a recessed portion in the under-layer by etching the under-layer using the resist pattern as a mask, slimming the resist pattern, forming a neutral layer having an affinity for first and second polymers on a region of the under-layer not covered with the slimmed resist pattern, forming a block copolymer film containing the first polymer and the second polymer on the slimmed resist pattern and the neutral layer, and forming a microphase separation pattern comprising a first portion formed of the first polymer and a second portion formed of the second polymer by applying microphase separation processing to the block copolymer film.

公开(公告)号：US20170178896A1

公开(公告)日：2017-06-22

申请号：US15208316

申请日：2016-07-12

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Kazuto MATSUKI ,  Ryoichi SUZUKI ,  Shinichi ITO ,  Seiji MORITA

IPC: H01L21/027 ,  H01L21/3105 ,  H01L21/02

CPC classification number: G03F7/168 ,  B81C1/00031 ,  B81C2201/0149 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/002 ,  G03F7/038 ,  G03F7/2059 ,  G03F7/40 ,  H01L21/0271 ,  H01L21/3086 ,  H01L21/31058 ,  H01L21/31144

Abstract: A pattern forming method includes forming a guide pattern on a substrate including first and second regions and applying a directed self-assembly material including a first and a second polymer portion to the substrate. The first region is irradiated with an energy beam. The substrate is subjected to a heating process after irradiation and the directed self-assembly material in the second region separates into a first polymer phase and a second polymer phase. The directed self-assembly material is removed from the first region after irradiation.

公开(公告)号：US09568464B2

公开(公告)日：2017-02-14

申请号：US14385398

申请日：2013-03-14

Applicant: KONINKLIJKE PHILIPS N.V.

Inventor： Pieter Jan Van Der Zaag ,  Emiel Peeters ,  Roelof Koole ,  Falco Cornelius Marinus Jacobus Maria Van Delft

IPC: B44C1/22 ,  G01N33/487 ,  G03F7/00 ,  B82Y30/00 ,  B81C1/00

CPC classification number: G01N33/48721 ,  B81C1/00087 ,  B81C2201/0149 ,  B82Y30/00 ,  G03F7/0002

Abstract: The invention relates to a method for manufacturing an apparatus for the processing of single molecules. According to this method, a self-assembling resist (155) is deposited on a processing layer (110, PL) and allowed to self-assemble into a pattern of two phases (155a, 155b). One of these phases (155a) is then selectively removed, and at least one aperture is generated in the processing layer (110, PL) through the mask of the remaining resist (155b). Thus apertures of small size can readily be produced that allow for the processing of single molecules (M), for example in DNA sequencing.

Abstract translation: 本发明涉及一种用于制造用于处理单分子的装置的方法。 根据该方法，将自组装抗蚀剂（155）沉积在处理层（110，PL）上并允许自组装成两相（155a，155b）的图案。 然后选择性地去除这些相（155a）中的一个，并且通过剩余的抗蚀剂（155b）的掩模在处理层（110，PL）中产生至少一个孔。 因此，容易产生允许单分子（M）加工的小尺寸孔，例如在DNA测序中。

公开(公告)号：US09557640B2

公开(公告)日：2017-01-31

申请号：US14656753

申请日：2015-03-13

Applicant: Board of Regents, The University of Texas System

Inventor： C. Grant Willson ,  Christopher Ellison ,  Michael Maher ,  Christopher Bates ,  Dustin Janes

IPC: G03F7/004 ,  G03F7/00 ,  G03F7/20 ,  C09D153/00 ,  G03F7/11 ,  B81C1/00

CPC classification number: G03F7/20 ,  B81C1/00031 ,  B81C2201/0149 ,  C09D153/00 ,  C09D153/005 ,  G03F7/0002 ,  G03F7/11 ,  G03F7/16

Abstract: A method for ordering block copolymers including forming a first layer having a first preference mode; and providing a reactive agent in selected regions of the first layer that modifies the selected regions to a second preference mode, wherein the selected regions define other regions of the first layer retaining the first preference mode thereby forming an alignment layer for block copolymers.

Abstract translation: 一种用于排序嵌段共聚物的方法，包括形成具有第一偏好模式的第一层; 以及在第一层的选定区域中提供反应剂，其将所选择的区域修改为第二偏好模式，其中所选择的区域限定保持第一偏好模式的第一层的其它区域，由此形成嵌段共聚物的取向层。