Abstract:
A high-speed electrical interconnection system is provided. The interconnection system comprises one or more electrical signal lines, or differential pairs of signal lines, and an in homogeneous dielectric system. The dielectric system further comprises a homogeneous dielectric layer interposed between the electrical signal lines, and an electrical conducting plane including a periodic array etched in the conducting material of the conducting plane. The inhomogeneous dielectric system exhibits a lower effective dielectric constant as compared to the dielectric constant of the homogeneous dielectric layer, resulting in lower microwave loss, reduced signal propagation delay, reduced signal skew and increased signal bandwidth. The interconnection system may be implemented for connecting one or more high speed electronic elements on-chip, off-chip, chip-chip connection on multilayer printed circuit boards, high speed die-package, high speed connectors and high speed electric cables.
Abstract:
Novel structures of the photodetector having broad spectral ranges detection capability are provided. The photodetector can offer high quantum efficiency >95% over wide spectral ranges, high frequency response >10 GHz (@3 dB). The photodiode array of N×N elements is also provided. The array can also offer wide spectral detection ranges ultraviolet to 2500 nm with high quantum efficiency >95% and high quantum efficiency of >10 GHz, cross-talk of
Abstract:
High-speed interconnect systems for connecting two or more electrical elements are provided. Interconnect system has the means, which could reduce the microwave loss induced due to the dielectrics. Reducing the effective loss tangent of the dielectrics reduces the microwave loss. With optimize design of the interconnects, the speed of the electrical signal can be made to closer to the speed of the light. The interconnect systems consists of the electrical signal line, inhomogeneous dielectric systems and the ground line, wherein inhomogeneous dielectric system consisting of the opened-trenches into the dielectric substrate or comb-shaped dielectrics to reduce the microwave loss. Alternatively dielectric structure can have the structure based on the fully electronic or electromagnetic crystal or quasi crystal with the line defect. Alternatively, dielectric structure can be made to comb-shaped structure with teethes having thickness and space making the air pocket to reduce the microwave loss. The interconnect system, can be made in rigid or flex board for off-chip interconnects for IC packages, connectors and cables, where conventional manufacturing technology can be used and yet to increase the bandwidth of the interconnects.
Abstract:
Novel structures of the photodetector having broad spectral ranges detection capability (from UV to 1700 nm (and also 2500 nm)) are provided. The photodetector can offer high quantum efficiency >95% over wide spectral ranges, high frequency response >8.5 GHz. The photodiode array of N×N elements is also provided. The array can also offer wide spectral detection ranges (UV to 1700 nm/2500 nm) with high quantum efficiency >85% and high quantum efficiency of >8.5 GHz, cross-talk of