High speed electrical interconnects and method of manufacturing
    13.
    发明申请
    High speed electrical interconnects and method of manufacturing 有权
    高速电气互连和制造方法

    公开(公告)号:US20050237137A1

    公开(公告)日:2005-10-27

    申请号:US10904731

    申请日:2004-11-24

    Applicant: Achyut Dutta

    Inventor: Achyut Dutta

    Abstract: High-speed interconnect systems for connecting two or more electrical elements are provided. Interconnect system has the means, which could reduce the microwave loss induced due to the dielectrics. Reducing the effective loss tangent of the dielectrics reduces the microwave loss. With optimize design of the interconnects, the speed of the electrical signal can be made to closer to the speed of the light. The interconnect systems consists of the electrical signal line, inhomogeneous dielectric systems and the ground line, wherein inhomogeneous dielectric system consisting of the opened-trenches into the dielectric substrate or comb-shaped dielectrics to reduce the microwave loss. Alternatively dielectric structure can have the structure based on the fully electronic or electromagnetic crystal or quasi crystal with the line defect. Alternatively, dielectric structure can be made to comb-shaped structure with teethes having thickness and space making the air pocket to reduce the microwave loss. The interconnect system, can be made in rigid or flex board for off-chip interconnects for IC packages, connectors and cables, where conventional manufacturing technology can be used and yet to increase the bandwidth of the interconnects.

    Abstract translation: 提供了用于连接两个或多个电气元件的高速互连系统。 互连系统具有减少由于电介质导致的微波损耗的手段。 降低电介质的有效损耗角正切可减少微波损耗。 通过互连的优化设计,可以使电信号的速度更接近于光的速度。 互连系统由电信号线,不均匀电介质系统和接地线组成,其中由介电衬底或梳状电介质构成的开放沟槽的非均匀介质系统以减少微波损耗。 或者介电结构可以具有基于完全电子或电磁晶体或具有线缺陷的准晶体的结构。 或者,电介质结构可以制成具有厚度和空间的牙齿的梳状结构,从而减小微波损耗。 互连系统可以用于用于IC封装,连接器和电缆的芯片外互连的刚性或柔性板,其中可以使用常规的制造技术,并且还可以增加互连的带宽。

    MULTICOLOR PHOTODIODE ARRAY AND METHOD OF MANUFACTURING THEREOF
    14.
    发明申请
    MULTICOLOR PHOTODIODE ARRAY AND METHOD OF MANUFACTURING THEREOF 有权
    多光子光电子阵列及其制造方法

    公开(公告)号:US20050184308A1

    公开(公告)日:2005-08-25

    申请号:US10709439

    申请日:2004-05-05

    Applicant: Achyut Dutta

    Inventor: Achyut Dutta

    Abstract: Novel structures of the photodetector having broad spectral ranges detection capability (from UV to 1700 nm (and also 2500 nm)) are provided. The photodetector can offer high quantum efficiency >95% over wide spectral ranges, high frequency response >8.5 GHz. The photodiode array of N×N elements is also provided. The array can also offer wide spectral detection ranges (UV to 1700 nm/2500 nm) with high quantum efficiency >85% and high quantum efficiency of >8.5 GHz, cross-talk of

    Abstract translation: 提供具有宽光谱范围检测能力(从UV到1700nm(也是2500nm))的光电检测器的新型结构。 光电探测器可以在宽光谱范围内提供高达95%的高量子效率,高频响应> 8.5 GHz。 还提供了NxN元件的光电二极管阵列。 该阵列还可以提供宽光谱检测范围(UV至1700 nm / 2500 nm),具有高量子效率> 85%,高量子效率> 8.5 GHz,串扰<1%。 在阵列中,每个光电二极管可独立寻址。 光检测器元件由基片,缓冲层,吸收层,接触层和具有薄接触层的照明表面组成。 照明表面可以是圆形,正方形,矩形或椭圆形的形状。 光电二极管阵列由NxN的光电二极管元件组成,其中每个元件可独立寻址。 传感器可以制作为顶照式或底照型。 本发明提供的光电二极管及其阵列可用于电信,成像(其中CCD和CMOS传感器不能使用)等多种用途,还可用于监控,卫星跟踪,先进激光雷达系统等多种传感应用。 这种光电二极管的最重要的优点是,在宽范围的温度变化范围内性能不会降低,从而消除了温度控制器的使用。 本发明的其它优点是常规的制造技术可用于制造本文所述的单个光电二极管或其阵列。

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