公开(公告)号：US10522508B2

公开(公告)日：2019-12-31

申请号：US15968562

申请日：2018-05-01

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian Hu ,  Ming-Han Wang ,  Tsun-Lung Hsieh ,  Chih-Yi Huang ,  Chih-Pin Hung

IPC: H01L23/31 ,  H01L25/065 ,  H01L23/498 ,  H01L23/00 ,  H01L25/00

Abstract: At least some embodiments of the present disclosure relate to a semiconductor device package. The semiconductor device package includes a substrate, an interposer disposed on the substrate, a conductive pillar disposed on the substrate, a first semiconductor device disposed on the interposer and electrically connected to the conductive pillar, a second semiconductor device disposed on the interposer, and an encapsulant surrounding the conductive pillar. The first semiconductor device includes a first conductive pad electrically connected to the interposer. The second semiconductor device includes a second conductive pad electrically connected to the interposer.

公开(公告)号：US12111114B2

公开(公告)日：2024-10-08

申请号：US17163217

申请日：2021-01-29

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hung-Hsien Huang ,  Shin-Luh Tarng ,  Ian Hu ,  Chien-Neng Liao ,  Jui-Cheng Yu ,  Po-Cheng Huang

IPC: F28D15/04 ,  F28D15/02 ,  F28F13/18

CPC classification number: F28D15/046 ,  F28D15/0233 ,  F28D15/0283 ,  F28F13/187 ,  F28F2255/18

Abstract: A heat transfer element, a method for manufacturing the same and a semiconductor structure including the same are provided. The heat transfer element includes a housing, a chamber, a dendritic layer and a working fluid. The chamber is defined by the housing. The dendritic layer is disposed on an inner surface of the housing. The working fluid is located within the chamber.

公开(公告)号：US11901252B2

公开(公告)日：2024-02-13

申请号：US17883550

申请日：2022-08-08

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ming-Han Wang ,  Ian Hu

IPC: H01L23/31 ,  H01L25/065 ,  H01L23/00 ,  H01L21/56 ,  H01L23/48 ,  H01L21/683 ,  H01L25/10

CPC classification number: H01L23/3128 ,  H01L21/565 ,  H01L21/6835 ,  H01L23/3135 ,  H01L23/481 ,  H01L24/09 ,  H01L24/17 ,  H01L25/0657 ,  H01L25/105 ,  H01L2221/68345 ,  H01L2221/68359 ,  H01L2224/02372 ,  H01L2225/0651 ,  H01L2225/0652 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06572 ,  H01L2225/107 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058

Abstract: A semiconductor device package includes a first substrate, a second substrate, and a first electronic component between the first substrate and the second substrate. The first electronic component has a first surface facing the first substrate and a second surface facing the second substrate. The semiconductor device package also includes a first electrical contact disposed on the first surface of the first electronic component and electrically connecting the first surface of the first electronic component with the first substrate. The semiconductor device package also includes a second electrical contact disposed on the second surface of the first electronic component and electrically connecting the second surface of the first electronic component with the second substrate. A method of manufacturing a semiconductor device package is also disclosed.

公开(公告)号：US11282767B2

公开(公告)日：2022-03-22

申请号：US16717929

申请日：2019-12-17

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En Chen ,  Ian Hu ,  Jung-Che Tsai

IPC: H01L23/427 ,  H01L23/46 ,  H01L23/48 ,  H01L23/40

Abstract: A semiconductor package structure includes a package substrate and a semiconductor die. The package substrate includes a plurality of hollow vias extending through the package substrate. The semiconductor die is electrically connected to the package substrate. The hollow vias are disposed under the semiconductor die.

公开(公告)号：US11139226B2

公开(公告)日：2021-10-05

申请号：US16579345

申请日：2019-09-23

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En Chen ,  Ian Hu ,  Hung-Hsien Huang

IPC: H01L23/46 ,  H01L23/495 ,  H01L23/367 ,  H01L23/31 ,  H01L23/473 ,  H01L23/427

Abstract: A semiconductor package structure includes a vapor chamber, a plurality of electrical contacts, a semiconductor die and an encapsulant. The vapor chamber defines an enclosed chamber for accommodating a working liquid. The electrical contacts surround the vapor chamber. The semiconductor die is disposed on the vapor chamber, and electrically connected to the electrical contacts through a plurality of bonding wires. The encapsulant covers a portion of the vapor chamber, portions of the electrical contacts, the semiconductor die and the bonding wires.

公开(公告)号：US11024557B2

公开(公告)日：2021-06-01

申请号：US16566495

申请日：2019-09-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En Chen ,  Ian Hu ,  Jin-Feng Yang

IPC: H01L23/427 ,  H01L23/00

Abstract: A semiconductor package structure includes a package substrate, a semiconductor die, a vapor chamber and a heat dissipating device. The package substrate has a first surface and a second surface opposite to the first surface. The semiconductor die is electrically connected to the first surface of the package substrate. The vapor chamber is thermally connected to a first surface of the semiconductor die. The vapor chamber defines an enclosed chamber for accommodating a first working liquid. The heat dissipating device is thermally connected to the vapor chamber. The heat dissipating device defines a substantially enclosed space for accommodating a second working liquid.

公开(公告)号：US11410934B2

公开(公告)日：2022-08-09

申请号：US16850999

申请日：2020-04-16

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian Hu ,  Shin-Luh Tarng

IPC: H01L23/48 ,  H01L23/538 ,  H01L21/48 ,  H01L21/50

Abstract: A substrate, a semiconductor package device and a method of manufacturing a semiconductor device package are provided. The substrate includes a low density wiring structure, a first middle density wiring structure and high density wiring structure. The first middle density wiring structure is electrically connected to the low density wiring structure. The high density wiring structure is electrically connected to the low density wiring structure. The high density wiring structure and the first middle density wiring structure are disposed side by side. A line space of a circuit layer of the low density wiring structure is greater than a line space of a circuit layer of the first middle density wiring structure. The line space of the circuit layer of the first middle density wiring structure is greater than a line space of a circuit layer of the high density wiring structure.

公开(公告)号：US11139222B2

公开(公告)日：2021-10-05

申请号：US16566502

申请日：2019-09-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Jung-Che Tsai ,  Ian Hu ,  Chih-Pin Hung

IPC: H01L23/427 ,  H01L23/36 ,  H01L23/00

Abstract: An electronic device includes a main substrate, a semiconductor package structure and at least one heat pipe. The semiconductor package structure is electrically connected to the main substrate, and includes a die mounting portion, a semiconductor die and a cover structure. The semiconductor die is disposed on the die mounting portion. The cover structure covers the semiconductor die. The heat pipe contacts the cover structure for dissipating a heat generated by the semiconductor die.

公开(公告)号：US11081420B2

公开(公告)日：2021-08-03

申请号：US16508210

申请日：2019-07-10

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Hsin-En Chen ,  Ian Hu ,  Chih-Pin Hung

IPC: H01L23/34 ,  H01L23/367 ,  H01L23/427

Abstract: A semiconductor package structure includes a package substrate, at least one semiconductor die, a heat dissipating device, at least one electronic device and a heat transmitting structure. The package substrate has a first surface and a second surface opposite to the first surface. The semiconductor die is electrically connected to the first surface of the package substrate. The heat dissipating device is thermally connected to the first surface of the package substrate. The electronic device is electrically connected to the second surface of the package substrate. The electronic device has a first surface and a second surface opposite to the first surface, and the first surface of the electronic device faces the second surface of the package substrate. The heat transmitting structure is disposed adjacent to the second surface of the package substrate, and thermally connected to the electronic device and the heat dissipating device.

公开(公告)号：US11075186B2

公开(公告)日：2021-07-27

申请号：US15429024

申请日：2017-02-09

Applicant: Advanced Semiconductor Engineering, Inc.

Inventor： Ian Hu ,  Jia-Rung Ho ,  Jin-Feng Yang ,  Chih-Pin Hung ,  Ping-Feng Yang

IPC: H01L23/00 ,  H01L23/367 ,  H01L23/31 ,  H01L23/04 ,  H01L23/373

Abstract: A semiconductor package includes a substrate, a semiconductor chip and a heat dissipation structure. The semiconductor chip includes a first surface, a second surface opposite to the first surface, and at least one chip pad disposed adjacent to the first surface. The chip pad is electrically connected to the substrate. The heat dissipation structure is disposed adjacent to the second surface of the semiconductor chip and a portion of the substrate. An area of the heat dissipation structure is greater than an area of the semiconductor chip.