公开(公告)号：US20140273437A1

公开(公告)日：2014-09-18

申请号：US13838763

申请日：2013-03-15

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  APPLIED MATERIALS, INC.

Inventor： Nicholas C. M. Fuller ,  Eric A. Joseph ,  Hiroyuki Miyazoe ,  Mark Hoinkis ,  Chun Yan

IPC: H01L21/768

CPC classification number: H01L21/76885 ,  H01L21/32136 ,  H01L21/32139 ,  H01L21/76852

Abstract: A method of forming at least one metal or metal alloy feature in an integrated circuit is provided. In one embodiment, the method includes providing a material stack including at least an etch mask located on a blanker layer of metal or metal alloy. Exposed portions of the blanket layer of metal or metal alloy that are not protected by the etch mask are removed utilizing an etch comprising a plasma that forms a polymeric compound and/or complex which protects a portion of the blanket layer of metal or metal alloy located directly beneath the etch mask during the etch.

Abstract translation: 提供了一种在集成电路中形成至少一种金属或金属合金特征的方法。 在一个实施例中，该方法包括提供材料堆叠，其至少包括位于金属或金属合金的擦除层上的蚀刻掩模。 使用不含蚀刻掩模保护的金属或金属合金的覆盖层的暴露部分使用包含等离子体的蚀刻来去除，所述等离子体形成聚合物和/或复合物，所述复合物和/或复合物保护位于金属或金属合金的橡皮布层的一部分 在蚀刻期间直接在蚀刻掩模下面。

公开(公告)号：US11649559B2

公开(公告)日：2023-05-16

申请号：US16266646

申请日：2019-02-04

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Chun Yan ,  Hua Chung ,  Schubert S. Chu

IPC: C30B25/16 ,  C30B25/08 ,  C30B25/00 ,  C30B33/00 ,  C23C16/44 ,  C23C16/30 ,  C23C16/48 ,  C23C16/56 ,  C30B25/10 ,  C30B25/12 ,  C30B25/14 ,  C30B29/40 ,  H01L21/67 ,  C30B35/00 ,  H01L21/225 ,  H01L21/30 ,  C30B29/06

CPC classification number: C30B25/08 ,  C23C16/301 ,  C23C16/4405 ,  C23C16/481 ,  C23C16/56 ,  C30B25/00 ,  C30B25/105 ,  C30B25/12 ,  C30B25/14 ,  C30B25/165 ,  C30B29/40 ,  C30B33/00 ,  C30B35/00 ,  H01L21/67167 ,  H01L21/67196 ,  H01L21/67207 ,  H01L21/67253 ,  C30B29/06 ,  H01L21/2252 ,  H01L21/30 ,  H01L21/67201

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More specifically, implementations disclosed herein relate to apparatus, systems, and methods for reducing substrate outgassing. A substrate is processed in an epitaxial deposition chamber for depositing an arsenic-containing material on a substrate and then transferred to a degassing chamber for reducing arsenic outgassing on the substrate. The degassing chamber includes a gas panel for supplying hydrogen, nitrogen, and oxygen and hydrogen chloride or chlorine gas to the chamber, a substrate support, a pump, and at least one heating mechanism. Residual or fugitive arsenic is removed from the substrate such that the substrate may be removed from the degassing chamber without dispersing arsenic into the ambient environment.

公开(公告)号：US10438796B2

公开(公告)日：2019-10-08

申请号：US15496420

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Chun Yan ,  Xinyu Bao

IPC: H01L21/02 ,  B08B7/00 ,  H01L21/67 ,  B08B7/04 ,  B08B5/00

Abstract: Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.

公开(公告)号：US10332739B2

公开(公告)日：2019-06-25

申请号：US15417466

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Chun Yan ,  Xinyu Bao ,  Hua Chung ,  Schubert S. Chu

IPC: H01L21/02 ,  B08B7/00 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67 ,  C23C16/44 ,  C23C16/56

Abstract: Implementations disclosed herein relate to methods for controlling substrate outgassing of hazardous gasses after an epitaxial process. In one implementation, the method includes providing a substrate comprising an epitaxial layer into a transfer chamber, wherein the transfer chamber has an ultraviolet (UV) lamp module disposed adjacent to a top ceiling of the transfer chamber, flowing an oxygen-containing gas into the transfer chamber through a gas line of the transfer chamber, flowing a non-reactive gas into the transfer chamber through the gas line of the transfer chamber, activating the UV lamp module to oxidize residues or species on a surface of the substrate to form an outgassing barrier layer on the surface of the substrate, ceasing the flow of the oxygen-containing gas and the nitrogen-containing gas into the transfer chamber, pumping the transfer chamber, and deactivating the UV lamp module.

公开(公告)号：US10224421B2

公开(公告)日：2019-03-05

申请号：US15933072

申请日：2018-03-22

Applicant: Applied Materials, Inc.

Inventor： Zhiyuan Ye ,  Xinyu Bao ,  Chun Yan ,  Hua Chung ,  Schubert S. Chu ,  Satheesh Kuppurao

IPC: H01L29/26 ,  H01L21/8234 ,  H01L29/66 ,  H01L21/8252 ,  H01L21/02 ,  H01L21/311 ,  H01L21/3105 ,  H01L21/027 ,  H01L21/67

Abstract: Methods of sub-10 nm fin formation are disclosed. One method includes patterning a first dielectric layer on a substrate to form one or more projections and a first plurality of spaces, and depositing a first plurality of columns in the first plurality of spaces. The first plurality of columns are separated by a second plurality of spaces. The method also includes depositing a second dielectric layer in the second plurality of spaces to form a plurality of dummy fins, removing the first plurality of columns to form a third plurality of spaces, depositing a second plurality of columns in the third plurality of spaces, removing the one or more projections and the plurality of dummy fins to form a fourth plurality of spaces, and depositing a plurality of fins in the fourth plurality of spaces. The plurality of fins have a width between 5-10 nm.

公开(公告)号：US10177017B1

公开(公告)日：2019-01-08

申请号：US15641963

申请日：2017-07-05

Applicant: Applied Materials, Inc.

Inventor： Chun Yan

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/683 ,  H01L21/673 ,  H01J37/32

Abstract: Embodiments of the present disclosure provide methods for conditioning a plasma processing chamber to maintain a reliable and predicable processing conditions while performing a oxide removal process on a substrate. In one embodiment, a method for conditioning a plasma processing chamber includes supplying a first gas mixture including an inert gas into a processing chamber a first period of time in absent of a substrate, supplying a second gas mixture including an inert gas, a hydrogen containing gas and a halogen containing gas for a second period of time in absent of the substrate, and supplying a third gas mixture including an inert gas and a hydrogen containing gas for a third period of time in absent of the substrate in the processing chamber.

公开(公告)号：US20140345645A1

公开(公告)日：2014-11-27

申请号：US13972704

申请日：2013-08-21

Applicant: International Business Machines Corporation ,  Applied Materials, Inc.

Inventor： Mark Hoinkis ,  Chun Yan ,  Hiroyuki Miyazoe ,  Eric Joseph

IPC: H01J37/32 ,  B08B7/00

CPC classification number: B08B7/00 ,  B08B5/00 ,  B08B7/0035 ,  H01J37/32009 ,  H01J37/321 ,  H01J37/32862

Abstract: Methods of removing copper residue from interior surfaces of an etch process chamber are described. A plasma treatment using halogen-containing precursors transforms the copper residue into halogen-copper complexes. Plasma-excited inert gases are used to desorb the halogen-copper complexes. In this way, the copper residue is removed from the interior surfaces of the etch process chamber.

Abstract translation: 描述了从蚀刻处理室的内表面去除铜残留物的方法。 使用含卤素前体的等离子体处理将铜残留物转化为卤素 - 铜络合物。 等离子体激发的惰性气体用于解吸卤素铜络合物。 以这种方式，从蚀刻处理室的内表面去除铜残留物。

公开(公告)号：US10147596B2

公开(公告)日：2018-12-04

申请号：US15871264

申请日：2018-01-15

Applicant: Applied Materials, Inc.

Inventor： Chun Yan ,  Xinyu Bao

IPC: H01L21/02 ,  B08B5/00 ,  H01L21/306 ,  H01L21/67

Abstract: Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of Group III-V channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. A second processing gas, Ar/Cl2/H2, is then used to create a reactive surface layer on the substrate surface. Finally, a hydrogen bake with a third processing gas, which includes a hydrogen source and an arsine source, is used to remove the reactive layer from the substrate surface.

公开(公告)号：US10115607B2

公开(公告)日：2018-10-30

申请号：US15267232

申请日：2016-09-16

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Chun Yan ,  Hua Chung ,  Schubert S. Chu

IPC: B65B31/00 ,  H01L21/67 ,  H01L21/673 ,  H01L21/677

Abstract: Embodiments disclosed herein generally relate to apparatus and methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a Si:As process has been performed on a substrate, and prior to additional processing. The apparatus includes a purge station including an enclosure, a gas supply coupled to the enclosure, an exhaust pump coupled to the enclosure, a first purge gas port formed in the enclosure, a first channel operatively connected to the gas supply at a first end and to the first purge gas port at a second end, a second purge gas port formed in the enclosure, and a second channel operatively connected to the second purge gas port at a third end and to the exhaust pump at a fourth end. The first channel includes a particle filter, a heater, and a flow controller. The second channel includes a dry scrubber.

公开(公告)号：US10002759B2

公开(公告)日：2018-06-19

申请号：US15417556

申请日：2017-01-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu Bao ,  Chun Yan ,  Errol Antonio C. Sanchez

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02513 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/0245 ,  H01L21/02516 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/31111

Abstract: The present disclosure generally relate to methods of processing a substrate in an epitaxy chamber. The method includes applying a passivating agent containing antimony to portions of a silicon substrate exposed through trenches formed in a dielectric layer on the silicon substrate, while applying the passivating agent containing antimony, exposing the silicon substrate to a group IV-containing precursor to form an epitaxial layer having a V-shaped structure having an exposed (111) plane at a bottom of the trenches, and forming a semiconductor layer on the epitaxial layer.