公开(公告)号：US20240347325A1

公开(公告)日：2024-10-17

申请号：US18750539

申请日：2024-06-21

Applicant: Tokyo Electron Limited

Inventor： Yuki ONODERA ,  Takamitsu TAKAYAMA

IPC: H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32862 ,  H01J37/32642 ,  H01J37/32715 ,  H01J2237/2007 ,  H01L21/6831

Abstract: A plasma processing apparatus includes: a stage having first and second placement surfaces; an elevating mechanism for raising and lowering a ring member on the second placement surface with respect to the second placement surface; a radio-frequency power source; and a controller for executing a cleaning process including an operation of separating the second placement surface and the ring member from each other by the elevating mechanism; and an operation of removing deposits accumulated on the stage and the ring member by supplying radio-frequency power from the radio-frequency power source to the stage to generate plasma. In the separation operation, a distance between the second placement surface and the ring member is set such that a density of plasma generated in a region between an outer edge of the first placement surface and a lower surface of the ring member is higher than that of plasma generated in other regions.

公开(公告)号：US20240321555A1

公开(公告)日：2024-09-26

申请号：US18732080

申请日：2024-06-03

Applicant: Applied Materials, Inc.

Inventor： Jongyun KIM ,  Kimseong SIM ,  Roman M. MOSTOVOY ,  Won Ho SUNG ,  Pei Chia CHEN

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52

CPC classification number: H01J37/3244 ,  C23C16/4405 ,  C23C16/4583 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/32477 ,  H01J2237/24507 ,  H01J2237/3321

Abstract: Embodiments described herein relate to process systems for cleaning semiconductor process chamber components. In one example, a process system include a process chamber having process chamber components. The process chamber components include a substrate support disposed within a chamber volume of the process chamber. A gas distribution assembly faces the substrate support. A gas baffle is fluidly coupled to the gas distribution assembly. A sensor system is coupled to the process chamber and is configured to monitor at least one characteristic of the volume of the process chamber. A dynamic gas assist is fluidly coupled to the gas baffle and is communicatively coupled to the sensor.

公开(公告)号：US12094716B2

公开(公告)日：2024-09-17

申请号：US17473821

申请日：2021-09-13

Applicant: Applied Materials, Inc.

Inventor： Leonard M. Tedeschi ,  Kartik Ramaswamy ,  Benjamin C E Schwarz ,  Changgong Wang ,  Vahid Firouzdor ,  Sumanth Banda ,  Teng-Fang Kou

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/683

CPC classification number: H01L21/3065 ,  H01J37/32862 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/6833 ,  H01J2237/332 ,  H01J2237/334

Abstract: Methods of semiconductor processing may include forming a plasma of a carbon-containing material within a processing region of a semiconductor processing chamber. The methods may include depositing a carbon-containing material on a backside of a substrate housed within the processing region of the semiconductor processing chamber. A front side of the substrate may be maintained substantially free of carbon-containing material. The methods may include performing an etch process on the front-side of the substrate. The methods may include removing the carbon-containing material from the backside of the substrate.

公开(公告)号：US20240290592A1

公开(公告)日：2024-08-29

申请号：US18655748

申请日：2024-05-06

Applicant: Applied Materials, Inc.

Inventor： Patrick Tae ,  Blake W. Erickson ,  Zhaozhao Zhu ,  Michael David Willwerth ,  Barry Paul Craver

IPC: H01J37/32 ,  G01B11/06 ,  H01L21/66

CPC classification number: H01J37/32972 ,  G01B11/0625 ,  G01B11/0683 ,  H01J37/32467 ,  H01J37/32862 ,  H01J37/32963 ,  H01L22/26 ,  H01J2237/24585 ,  H01J2237/332

Abstract: A method includes embedding at least part of a transparent crystal within a wall and a liner of a processing chamber, depositing a transparent thin film on a surface of the transparent crystal that is exposed to an interior of the processing chamber and depositing a process film layer on the transparent thin film. The method includes receiving light reflected back from a surface of the transparent thin film and a surface of the process film layer and detecting, by a spectrometer within the received light, a first spectrum that is representative of the process film layer. The method includes calculating, by a processing device coupled to the spectrometer, a process drift of the processing chamber based at least in part on the first spectrum.

公开(公告)号：US20240249926A1

公开(公告)日：2024-07-25

申请号：US18293322

申请日：2021-11-11

Applicant: JIANGSU LEUVEN INSTRUMENTS CO., LTD.

Inventor： Dajian HAN ,  Na LI ,  Taiyan PENG ,  Dongchen CHE ,  Kaidong XU

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32862 ,  H01J37/32449 ,  H01L21/3065 ,  H01J2237/334

Abstract: A plasma treatment method, which is applied to a plasma treatment apparatus, wherein the plasma treatment apparatus comprises an ion source cavity (10), and sediment is present in the ion source cavity (10). The plasma treatment method comprises: introducing cleaning gas into an ion source cavity (10) for ionization to generate a first plasma, so that the first plasma reacts with sediment in the ion source cavity (10) to generate a gas compound, which is then discharged, thereby achieving the aim of cleaning the sediment in the ion source cavity (10).

公开(公告)号：US12014902B2

公开(公告)日：2024-06-18

申请号：US17887992

申请日：2022-08-15

Applicant: Applied Materials, Inc.

Inventor： Jong Yun Kim ,  Kim Seong Sim ,  Roman M. Mostovoy ,  Won Ho Sung ,  Pei-Chia Chen

IPC: H01J37/32 ,  C23C16/44 ,  C23C16/458 ,  C23C16/52

CPC classification number: H01J37/3244 ,  C23C16/4405 ,  C23C16/4583 ,  C23C16/52 ,  H01J37/32357 ,  H01J37/32862 ,  H01J37/32477 ,  H01J2237/24507 ,  H01J2237/3321

Abstract: Embodiments described herein relate to process systems for cleaning semiconductor process chamber components. The process systems include a process chamber having process chamber components. The process chamber components include a substrate support disposed within a chamber volume of the process chamber. A gas distribution assembly faces the substrate support. A gas baffle is fluidly coupled to the gas distribution assembly. A sensor system is coupled to the process chamber and is configured to monitor at least one characteristic of the volume of the process chamber. A dynamic gas assist is fluidly coupled to the gas baffle and is communicatively coupled to the sensor.

公开(公告)号：US20240150894A1

公开(公告)日：2024-05-09

申请号：US18413533

申请日：2024-01-16

Applicant: ASM IP Holding B.V.

Inventor： Toshiharu Watarai ,  Hiroki Arai ,  Toshio Nakanishi ,  Yoshiyuki Kikuchi ,  Ryo Miyama

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/4405 ,  C23C16/4412 ,  C23C16/45591 ,  C23C16/50 ,  H01J37/32834 ,  H01J37/32853 ,  H01J37/32862 ,  H01J37/3288

Abstract: Examples of a cleaning method includes supplying a cleaning gas into an exhaust duct that provides an exhaust flow passage of a gas supplied to an area above a susceptor, the exhaust duct having a shape surrounding the susceptor in plan view, and activating the cleaning gas to clean an inside of the exhaust duct.

公开(公告)号：US11961715B2

公开(公告)日：2024-04-16

申请号：US17188034

申请日：2021-03-01

Applicant: KOKUSAI ELECTRIC CORPORATION

Inventor： Daisuke Hara ,  Takashi Yahata ,  Tsuyoshi Takeda ,  Kenji Ono ,  Kazuhiko Yamazaki

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67 ,  H01L21/687

CPC classification number: H01J37/3244 ,  H01J37/32715 ,  H01J37/32834 ,  H01J37/32862 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/67109 ,  H01L21/68771 ,  H01J2237/20214 ,  H01J2237/332

Abstract: Described herein is a technique capable of efficiently removing a foreign substance in a reaction tube. According to one aspect of the technique, there is provided a substrate processing apparatus including: a reaction tube in which a substrate is processed; and a substrate retainer including a plurality of support columns configured to support the substrate, wherein at least one among the plurality of the support columns includes: a hollow portion through which an inert gas is supplied; and a gas supply port through which the inert gas is supplied toward an inner wall of the reaction tube.

公开(公告)号：US11955322B2

公开(公告)日：2024-04-09

申请号：US17358808

申请日：2021-06-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor： Ming Che Chen ,  Wei-Chen Liao

IPC: C23C16/455 ,  B08B7/00 ,  C23C16/44 ,  H01J37/32

CPC classification number: H01J37/32862 ,  B08B7/0071 ,  C23C16/4405 ,  C23C16/45536 ,  H01J37/32082

Abstract: A device for a plasma processing chamber includes a base, an upper portion attached to the base and extending transverse to the base, and one or more first through holes defined in the base. The one or more first through holes correspond to one or more openings defined in the plasma processing chamber for attaching the device. The device further includes a second through hole defined in the upper portion, and a gauge located in the second through hole, the gauge configured for recording a position of the plasma processing chamber and a shift in the position of the plasma processing chamber.

公开(公告)号：US20240096607A1

公开(公告)日：2024-03-21

申请号：US18171992

申请日：2023-02-21

Applicant: Kioxia Corporation

Inventor： Shohei ARAKAWA ,  Yuta OSADA

IPC: H01J37/32 ,  H01L21/3213 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01J37/32862 ,  H01J37/32724 ,  H01L21/32136 ,  H01L21/6838 ,  H01L21/68742 ,  H01L21/6875 ,  H01J2237/3341

Abstract: A semiconductor manufacturing apparatus includes: a chamber including a top plate; a holder provided in the chamber and configured to place a substrate; a high-frequency power source configured to apply high-frequency power to the holder; a gas supply pipe configured to supply a gas to the chamber; a gas discharge pipe configured to discharge a gas from the chamber; and a plurality of lift pins configured to move the substrate in a direction away from the holder to the top plate, which allows tip ends of the lift pins to move from an upper surface of the holder to a position with a first distance, wherein the first distance is equal to or greater than about 70% of a second distance between the upper surface of the holder and the top plate.