公开(公告)号：US20230253201A1

公开(公告)日：2023-08-10

申请号：US18134802

申请日：2023-04-14

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Chandan Kr Barik ,  Michael Haverty ,  Muthukumar Kaliappan ,  Cong Trinh ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Anil Kumar Tummanapelli ,  Richard Ming Wah Wong ,  Yingqian Chen

IPC: H01L21/02 ,  C23C16/44 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02211 ,  H01L21/0217 ,  C23C16/4408 ,  C23C16/345 ,  C23C16/45553 ,  H01L21/0228

Abstract: Chalcogen silane precursors are described. Methods for depositing a silicon nitride (SixNy) film on a substrate are described. The substrate is exposed to the chalcogen silane and a reactant to deposit the silicon nitride (SixNy) film. The exposures can be sequential or simultaneous. The chalcogen silane may be substantially free of halogen. The chalcogen may be selected from the group consisting of sulfur (S), selenium (Se), and tellurium (Te).

公开(公告)号：US20210388497A1

公开(公告)日：2021-12-16

申请号：US17343866

申请日：2021-06-10

Applicant: Applied Materials, Inc.

Inventor： Cong Trinh ,  Maribel Maldonado-Garcia ,  Mihaela A. Balseanu ,  Alexander V. Garachtchenko ,  Tsutomu Tanaka

IPC: C23C16/455 ,  C23C16/52 ,  C23C16/505

Abstract: Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.

公开(公告)号：US10170298B2

公开(公告)日：2019-01-01

申请号：US15805831

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/687

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

公开(公告)号：US09875888B2

公开(公告)日：2018-01-23

申请号：US14872775

申请日：2015-10-01

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/687

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  G05B2219/45031 ,  G05B2219/45232 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68764

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

公开(公告)号：US11932940B2

公开(公告)日：2024-03-19

申请号：US17096341

申请日：2020-11-12

Applicant: Applied Materials, Inc.

Inventor： Keenan N. Woods ,  Cong Trinh ,  Mark Saly ,  Mihaela A. Balseanu ,  Maribel Maldonado-Garcia ,  Lisa J. Enman

IPC: C23C16/34 ,  C08K5/5475 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  H01L21/768

CPC classification number: C23C16/45553 ,  C08K5/5475 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45536 ,  H01L21/02126 ,  H01L21/76826

Abstract: Silyl pseudohalides having a general formula of R4-nSiXn, where n is a range of 1-4, each R is independently selected from H, alkyl, alkenyl, aryl, amino, alkyl amino, alkoxide, and phosphine groups, and each X is a pseudohalide selected from nitrile, cyanate, isocyanate, thiocyanate, isothiocyanate, selenocyanate and isoselenocyanate are disclosed. Further, some embodiments of the disclosure provide methods for depositing silicon-containing films using silyl pseudohalides.

公开(公告)号：US20230096772A1

公开(公告)日：2023-03-30

申请号：US18074872

申请日：2022-12-05

Applicant: Applied Materials, Inc.

Inventor： Maribel Maldonado-Garcia ,  Cong Trinh ,  Mihaela A. Balseanu ,  Kevin Griffin ,  Ning Li ,  Zohreh Razavi Hesabi

IPC: C23C16/448 ,  C23C16/455 ,  C23C16/52 ,  C23C16/34

Abstract: Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.

公开(公告)号：US20210404058A1

公开(公告)日：2021-12-30

申请号：US16910825

申请日：2020-06-24

Applicant: Applied Materials, Inc.

Inventor： Maribel Maldonado-Garcia ,  Cong Trinh ,  Mihaela A. Balseanu ,  Kevin Griffin ,  Ning Li ,  Zohreh Razavi Hesabi

IPC: C23C16/448 ,  C23C16/34 ,  C23C16/455 ,  C23C16/52

Abstract: Apparatus and methods for supplying a vapor to a processing chamber such as a film deposition chamber are described. The vapor delivery apparatus comprises an inlet conduit and an outlet conduit, in fluid communication with an ampoule. A needle valve device restricts flow through the outlet conduit.

公开(公告)号：US11017997B2

公开(公告)日：2021-05-25

申请号：US16477671

申请日：2018-01-11

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Maribel Maldonado-Garcia

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  H01L21/687

Abstract: Processing methods for forming a silicon nitride film comprising exposing a metal surface to a silicon precursor, a nitrogen-containing reactant and a hydrogen-containing plasma at a temperature less than or equal to about 250° C. to form a silicon nitride film with a low etch rate without damaging the metal surface.

公开(公告)号：US09297073B2

公开(公告)日：2016-03-29

申请号：US14625846

申请日：2015-02-19

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Wenbo Yan ,  Victor Nguyen ,  Cong Trinh ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: B44C1/22 ,  C23C16/455 ,  H01L21/3065

CPC classification number: C23C16/45534 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3065

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.

Abstract translation: 本文公开的实施例通常涉及衬底的处理，更具体地涉及使用沉积蚀刻循环来精确控制膜厚度的方法。 特别地，本公开的实施例可以用于在填充高纵横比特征期间控制膜厚度。

公开(公告)号：US12195851B2

公开(公告)日：2025-01-14

申请号：US17343866

申请日：2021-06-10

Applicant: Applied Materials, Inc.

Inventor： Cong Trinh ,  Maribel Maldonado-Garcia ,  Mihaela A. Balseanu ,  Alexander V. Garachtchenko ,  Tsutomu Tanaka

IPC: C23C16/455 ,  C23C16/505 ,  C23C16/52

Abstract: Methods of depositing thin films for an electronic device, for example a semiconductor device include applying a first pulsed plasma with or without a reactant and a second continuous plasma with a reactant.