公开(公告)号：US20180291505A1

公开(公告)日：2018-10-11

申请号：US16006010

申请日：2018-06-12

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

公开(公告)号：US10023958B2

公开(公告)日：2018-07-17

申请号：US14533496

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

公开(公告)号：US11164753B2

公开(公告)日：2021-11-02

申请号：US14595595

申请日：2015-01-13

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Keiichi Tanaka ,  Steven D. Marcus

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32 ,  H01L21/687 ,  C23C16/455

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

公开(公告)号：US09297073B2

公开(公告)日：2016-03-29

申请号：US14625846

申请日：2015-02-19

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Wenbo Yan ,  Victor Nguyen ,  Cong Trinh ,  Mihaela Balseanu ,  Li-Qun Xia

IPC: B44C1/22 ,  C23C16/455 ,  H01L21/3065

CPC classification number: C23C16/45534 ,  C23C16/045 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3065

Abstract: Embodiments disclosed herein generally relate to the processing of substrates, and more particularly, relate to methods for accurate control of film thickness using deposition-etch cycles. Particularly, embodiments of the present disclosure may be used in controlling film thickness during filling high aspect ratio features.

Abstract translation: 本文公开的实施例通常涉及衬底的处理，更具体地涉及使用沉积蚀刻循环来精确控制膜厚度的方法。 特别地，本公开的实施例可以用于在填充高纵横比特征期间控制膜厚度。

公开(公告)号：US20180076023A1

公开(公告)日：2018-03-15

申请号：US15805831

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/40 ,  H01L21/687

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  G05B2219/45031 ,  G05B2219/45232 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68764

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

公开(公告)号：US20160099143A1

公开(公告)日：2016-04-07

申请号：US14872775

申请日：2015-10-01

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  H01L21/687

CPC classification number: H01L21/02164 ,  C23C16/402 ,  C23C16/45542 ,  C23C16/45551 ,  C23C16/45553 ,  G05B2219/45031 ,  G05B2219/45232 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/68764

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.

Abstract translation: 描述了使用氨基硅烷化合物作为硅前体在晶片表面上沉积SiO 2膜的工艺。

公开(公告)号：US20150147484A1

公开(公告)日：2015-05-28

申请号：US14533496

申请日：2014-11-05

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34

CPC classification number: C23C16/45553 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536 ,  C23C16/4554 ,  C23C16/45542

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

Abstract translation: 提供沉积包含SiCN的膜的方法。 某些方法包括将衬底表面暴露于硅前体，其中硅前体用Cl，Br或I卤化，硅前体包含卤代硅烷，卤代碳硅烷，卤代氨基硅烷或卤代碳硅烷基胺。 然后，可以将衬底表面暴露于含氮等离子体或氮前体和致密化等离子体。

公开(公告)号：US20220059362A1

公开(公告)日：2022-02-24

申请号：US17516096

申请日：2021-11-01

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Victor Nguyen ,  Mihaela A. Balseanu ,  Li-Qun Xia ,  Keiichi Tanaka ,  Steven D. Marcus

IPC: H01L21/311 ,  H01L21/033 ,  H01J37/32 ,  H01L21/687 ,  C23C16/455

Abstract: Provided are self-aligned double patterning methods including feature trimming. The SADP process is performed in a single batch processing chamber in which the substrate is laterally moved between sections of the processing chamber separated by gas curtains so that each section independently has a process condition.

公开(公告)号：US11028478B2

公开(公告)日：2021-06-08

申请号：US16006010

申请日：2018-06-12

Applicant: Applied Materials, Inc.

Inventor： Victor Nguyen ,  Ning Li ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly ,  David Thompson

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/36

Abstract: Provided are methods for the deposition of films comprising SiCN. Certain methods involve exposing a substrate surface to a silicon precursor, wherein the silicon precursor is halogenated with Cl, Br or I, and the silicon precursor comprises a halogenated silane, a halogenated carbosilane, an halogenated aminosilane or a halogenated carbo-sillyl amine. Then, the substrate surface can be exposed to a nitrogen-containing plasma or a nitrogen precursor and densification plasma.

公开(公告)号：US10170298B2

公开(公告)日：2019-01-01

申请号：US15805831

申请日：2017-11-07

Applicant: Applied Materials, Inc.

Inventor： Wenbo Yan ,  Cong Trinh ,  Ning Li ,  Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Mark Saly

IPC: H01L21/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/687

Abstract: Processes for depositing SiO2 films on a wafer surface utilizing an aminosilane compound as a silicon precursor are described.