公开(公告)号：US20250051902A1

公开(公告)日：2025-02-13

申请号：US18232631

申请日：2023-08-10

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Bencherki Mebarki ,  Jiecong Tang ,  Mohammed Mahdi Tavakoli ,  John Sudijono ,  Joung Joo Lee

IPC: C23C12/00 ,  C23C16/40 ,  C23C16/455 ,  C23C16/56

Abstract: Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.

公开(公告)号：US20240332014A1

公开(公告)日：2024-10-03

申请号：US18614045

申请日：2024-03-22

Applicant: Applied Materials, Inc ,  National University of Singapore

Inventor： Xinke Wang ,  Long Liu ,  Mark Saly ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono

IPC: H01L21/02 ,  H01L21/3065 ,  H01L21/324

CPC classification number: H01L21/02573 ,  H01L21/02115 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/324

Abstract: Molecular layer deposition (MLD) is used to provide conformal and uniform doping technology for HAR and reentrant structures. MLD is used to deposit a conformal carbon-based film that contains a doping element. Thermal annealing is then used to make the doping element diffuse into the semiconductor material. For HAR structures, a conformal layer is used with low temperature doping, precise control, and the carbon-based film can be easily removed during doping or after doping. The amount of doping can be controlled by changing the thickness of MLD carbon-based film.