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公开(公告)号：US20230207314A1
公开(公告)日：2023-06-29
申请号：US17562441
申请日：2021-12-27
Applicant: Applied Materials, Inc.
Inventor： Chandan Das , Susmit Singha Roy , Bhaskar Jyoti Bhuyan , Supriya Ghosh , Jiecong Tang , John Sudijono , Abhijit Basu Mallick , Mark Saly
IPC: H01L21/02
CPC classification number: H01L21/02565 , H01L21/02614
Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.
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公开(公告)号：US20230360967A1
公开(公告)日：2023-11-09
申请号：US17739856
申请日：2022-05-09
Applicant: Applied Materials, Inc.
Inventor： Chandan Das , Susmit Singha Roy , Supriya Ghosh , John Sudijono , Abhijit Basu Mallick , Jiecong Tang
IPC: H01L21/768 , H01L27/11556 , H01L27/11582
CPC classification number: H01L21/76843 , H01L21/76877 , H01L27/11556 , H01L27/11582
Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.
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公开(公告)号：US11760768B2
公开(公告)日：2023-09-19
申请号：US17236020
申请日：2021-04-21
Applicant: Applied Materials, Inc.
Inventor： Chandan Kr Barik , John Sudijono , Chandan Das , Doreen Wei Ying Yong , Mark Saly , Bhaskar Jyoti Bhuyan , Feng Q. Liu
CPC classification number: C07F11/005 , C23C16/0272 , C23C16/18 , C23C16/4408 , C23C16/45527 , C23C16/45553 , C23C16/56 , C23C16/0209 , C23C16/0227
Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.
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Patent Agency Ranking
公开(公告)号：US20230382933A1
公开(公告)日：2023-11-30
申请号：US18232421
申请日：2023-08-10
Applicant: Applied Materials, Inc.
Inventor： Chandan Kr Barik , John Sudijono , Chandan Das , Doreen Wei Ying Yong , Mark Saly , Bhaskar Jyoti Bhuyan , Feng Q. Liu
CPC classification number: C07F11/005 , C23C16/45553 , C23C16/4408 , C23C16/0272 , C23C16/18 , C23C16/45527 , C23C16/56 , C23C16/0227 , C23C16/0209
Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.
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公开(公告)号：US20220356197A1
公开(公告)日：2022-11-10
申请号：US17236020
申请日：2021-04-21
Applicant: Applied Materials, Inc.
Inventor： Chandan Kr Barik , John Sudijono , Chandan Das , Doreen Wei Ying Yong , Mark Saly , Bhaskar Jyoti Bhuyan , Feng Q. Liu
Abstract: Molybdenum(0) and coordination complexes are described. Methods for depositing molybdenum-containing films on a substrate are described. The substrate is exposed to a molybdenum precursor and a reactant to form the molybdenum-containing film (e.g., elemental molybdenum, molybdenum oxide, molybdenum carbide, molybdenum silicide, molybdenum disulfide, molybdenum nitride). The exposures can be sequential or simultaneous.
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公开(公告)号：US20250051902A1
公开(公告)日：2025-02-13
申请号：US18232631
申请日：2023-08-10
Applicant: Applied Materials, Inc.
Inventor： Chandan Das , Bencherki Mebarki , Jiecong Tang , Mohammed Mahdi Tavakoli , John Sudijono , Joung Joo Lee
IPC: C23C12/00 , C23C16/40 , C23C16/455 , C23C16/56
Abstract: Transition metal dichalcogenide (TMDC) films and methods for conformally depositing TMDC films on a substrate surface are described. The substrate surface may have one or more features formed therein, one or more layers formed thereon, and combinations thereof. The substrate surface is exposed to a transition metal precursor and an oxidant to form a transition metal oxide film in a first phase. The transition metal oxide film is exposed to a chalcogenide precursor to convert the transition metal oxide film to the TMDC film in a second phase.
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公开(公告)号：US12110584B2
公开(公告)日：2024-10-08
申请号：US17361231
申请日：2021-06-28
Applicant: Applied Materials, Inc.
Inventor： Chandan Das , Susmit Singha Roy , Bhaskar Jyoti Bhuyan , John Sudijono , Abhijit Basu Mallick , Mark Saly
IPC: C23C16/30 , C23C16/04 , C23C16/06 , C23C16/448 , H01L21/02
CPC classification number: C23C16/305 , C23C16/04 , C23C16/06 , C23C16/4485 , H01L21/0228
Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.
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公开(公告)号：US20220411918A1
公开(公告)日：2022-12-29
申请号：US17361231
申请日：2021-06-28
Applicant: Applied Materials, Inc.
Inventor： Chandan Das , Susmit Singha Roy , Bhaskar Jyoti Bhuyan , John Sudijono , Abhijit Basu Mallick , Mark Saly
IPC: C23C16/30 , C23C16/06 , C23C16/448 , C23C16/04
Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.
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