公开(公告)号：US20230402285A1

公开(公告)日：2023-12-14

申请号：US17839809

申请日：2022-06-14

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/033

CPC classification number: H01L21/0337 ,  H01L21/0332

Abstract: Methods of depositing a conformal carbon-containing spacer layer are described. Exemplary processing methods may include flowing a first precursor over a patterned surface and a substrate to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the substrate. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces. The patterned surface may be an EUV photoresist pattern, and the carbon-containing film may be formed on the sidewall and act as a spacer to reduce the critical dimension (CD). The carbon-containing film may act as an etch protection layer or an etch resistance layer for the sidewall of the nanostructures. When no etch is performed, the carbon-containing film may act as a liner material.

公开(公告)号：US20230207314A1

公开(公告)日：2023-06-29

申请号：US17562441

申请日：2021-12-27

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  Supriya Ghosh ,  Jiecong Tang ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC: H01L21/02

CPC classification number: H01L21/02565 ,  H01L21/02614

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

公开(公告)号：US11972940B2

公开(公告)日：2024-04-30

申请号：US17722648

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56

CPC classification number: H01L21/02118 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

公开(公告)号：US12037679B2

公开(公告)日：2024-07-16

申请号：US17633010

申请日：2021-12-15

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Zhongxin Chen ,  Kian Ping Loh ,  John Sudijono ,  Haisen Xu ,  Sze Chieh Tan ,  Yuanxing Han ,  Jiecong Tang ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick

IPC: C23C16/27 ,  C01B32/26 ,  C08F2/48 ,  C23C16/02 ,  C23C16/04 ,  C23C16/511

CPC classification number: C23C16/274 ,  C01B32/26 ,  C08F2/48 ,  C23C16/0272 ,  C23C16/042 ,  C23C16/511

Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

公开(公告)号：US20240234127A1

公开(公告)日：2024-07-11

申请号：US18615539

申请日：2024-03-25

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56

CPC classification number: H01L21/02118 ,  C23C16/04 ,  C23C16/26 ,  C23C16/56 ,  H01L21/02205 ,  H01L21/0228 ,  H01L21/02304

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.

公开(公告)号：US20230279540A1

公开(公告)日：2023-09-07

申请号：US17633010

申请日：2021-12-15

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Vicknesh Sahmuganathan ,  Jiteng Gu ,  Zhongxin Chen ,  Kian Ping Loh ,  John Sudijono ,  Haisen Xu ,  Sze Chieh Tan ,  Yuanxing Han ,  Jiecong Tang ,  Eswaranand Venkatasubramanian ,  Abhijit Basu Mallick

IPC: C23C16/27 ,  C01B32/26 ,  C08F2/48 ,  C23C16/04 ,  C23C16/511 ,  C23C16/02

CPC classification number: C23C16/274 ,  C01B32/26 ,  C08F2/48 ,  C23C16/0272 ,  C23C16/042 ,  C23C16/511

Abstract: Apparatuses and methods for forming a film on a substrate are described. The film is formed on the substrate by depositing an adamantane monomer and an initiator on the substrate to form a polymerizable seed layer and curing the polymerizable seed layer to form a polyadamantane layer.

公开(公告)号：US20240183035A1

公开(公告)日：2024-06-06

申请号：US17991931

申请日：2022-11-22

Applicant: Applied Materials, Inc. ,  National University of Singapore

Inventor： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Long Liu

IPC: C23C16/455 ,  C23C16/02 ,  C23C16/04

CPC classification number: C23C16/45553 ,  C23C16/0272 ,  C23C16/045

Abstract: Methods of selectively depositing a selectively deposited layer are described. Exemplary processing methods may include treating a substrate comprising a non-hydroxyl-containing surface and a second surface with one or more of ozone, hydrogen peroxide, or a hydrogen plasma to passivate the second surface. In one or more embodiments, a selectively deposited layer is then selectively deposited on the non-hydroxyl-containing surface and not on the second surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the non-hydroxyl-containing surface and not on the second surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial selectively deposited layer. The methods may include removing a second precursor effluent from the substrate.

公开(公告)号：US20240027912A1

公开(公告)日：2024-01-25

申请号：US17872370

申请日：2022-07-25

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: G03F7/40 ,  G03F7/34

CPC classification number: G03F7/40 ,  G03F7/346

Abstract: Methods of depositing a conformal carbon-containing film on an EUV photoresist to reduce line edge roughness (LER) are described. Exemplary processing methods may include flowing a first precursor over a patterned EUV surface to form a first portion of an initial carbon-containing film on the structure. The methods may include removing a first precursor effluent from the patterned EUV photoresist. A second precursor may then be flowed over the patterned EUV photoresist to react with the first portion of the initial carbon-containing film. The methods may include removing a second precursor effluent from the patterned EUV photoresist. The methods may include etching the substrate to remove a portion of the carbon-containing film and expose a top surface of the patterned surface and expose the substrate between the patterned surfaces.

公开(公告)号：US20230360967A1

公开(公告)日：2023-11-09

申请号：US17739856

申请日：2022-05-09

Applicant: Applied Materials, Inc.

Inventor： Chandan Das ,  Susmit Singha Roy ,  Supriya Ghosh ,  John Sudijono ,  Abhijit Basu Mallick ,  Jiecong Tang

IPC: H01L21/768 ,  H01L27/11556 ,  H01L27/11582

CPC classification number: H01L21/76843 ,  H01L21/76877 ,  H01L27/11556 ,  H01L27/11582

Abstract: Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a metal precursor and an oxidant to form a transition metal oxide film; the transition metal oxide film is exposed to a chalcogenide precursor to form the transition metal dichalcogenide film.

公开(公告)号：US20230335391A1

公开(公告)日：2023-10-19

申请号：US17722648

申请日：2022-04-18

Applicant: Applied Materials, Inc.

Inventor： Xinke Wang ,  Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallik ,  Jiecong Tang ,  John Sudijono ,  Mark Saly

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/04 ,  C23C16/26

CPC classification number: H01L21/02118 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/02205 ,  C23C16/56 ,  C23C16/04 ,  C23C16/26

Abstract: Methods of selectively depositing a carbon-containing layer are described. Exemplary processing methods may include flowing a first precursor over a substrate comprising a metal surface and a non-metal surface to form a first portion of an initial carbon-containing film on the metal surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial carbon-containing layer. The methods may include removing a second precursor effluent from the substrate. The methods may include pre-treating the metal surface of the substrate to form a metal oxide surface on the metal surface.