公开(公告)号：US10898986B2

公开(公告)日：2021-01-26

申请号：US16122682

申请日：2018-09-05

Applicant: Applied Materials, Inc.

Inventor： Harry Q. Lee ,  Kun Xu ,  Jimin Zhang

IPC: G01B5/02 ,  B24B37/013 ,  B24B49/12 ,  B24B49/10 ,  B24B37/20

Abstract: A method of controlling polishing includes sweeping a sensor of an in-situ monitoring system across a substrate as a layer of the substrate undergoes polishing, generating from the in-situ monitoring system a sequence of signal values that depend on a thickness of the layer, detecting from the sequence of signal values, a time that the sensor traverses a leading edge of the substrate or a retaining ring and a time that the sensor traverses a trailing edge of the substrate or retaining ring; and for each signal value of at least some of the sequence of signal values, determining a position on the substrate for the signal value based on the time that the sensor traverses the leading edge and the time that the sensor traverses a trailing edge.

公开(公告)号：US10589397B2

公开(公告)日：2020-03-17

申请号：US15424670

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Alain Duboust ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang ,  Stephen Jew ,  David H. Mai ,  Huyen Tran

IPC: B24B37/013 ,  B24B37/04 ,  H01L21/66 ,  B65B1/36 ,  H01L21/306

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

公开(公告)号：US10076817B2

公开(公告)日：2018-09-18

申请号：US14334608

申请日：2014-07-17

Applicant: Applied Materials, Inc.

Inventor： Hung Chih Chen ,  Paul D. Butterfield ,  Jay Gurusamy ,  Jason Garcheung Fung ,  Shou-Sung Chang ,  Jimin Zhang ,  Eric Lau

IPC: B24B37/26 ,  B24B37/10 ,  B24B37/22

CPC classification number: B24B37/10

Abstract: A chemical mechanical polishing apparatus includes a plate on which a substrate is received, and a movable polishing pad support and coupled polishing pad which move across the substrate and orbit a local region of the substrate during polishing operation. The load of the pad against the substrate, the revolution rate of the pad, and the size, shape, and composition of the pad, may be varied to control the rate of material removed by the pad.

公开(公告)号：US20180056476A1

公开(公告)日：2018-03-01

申请号：US15686936

申请日：2017-08-25

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Zhihong Wang ,  Harry Q. Lee ,  Brian J. Brown ,  Wen-Chiang Tu ,  William H. McClintock ,  Wei Lu

IPC: B24B37/005 ,  B24B53/017 ,  G01B7/06

CPC classification number: B24B37/005 ,  B24B53/017 ,  G01B7/10

Abstract: An apparatus for chemical mechanical polishing includes a platen having a surface to support a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, a pad conditioner including a conductive body to be pressed against the polishing surface, an in-situ polishing pad thickness monitoring system including a sensor disposed in the platen to generate a magnetic field that passes through the polishing pad, and a controller configured to receive a signal from the monitoring system and generate a measure of polishing pad thickness based on a portion of the signal corresponding to a time that the sensor is below the conductive body of the pad conditioner.

公开(公告)号：US20170151647A1

公开(公告)日：2017-06-01

申请号：US15424670

申请日：2017-02-03

Applicant: Applied Materials, Inc.

Inventor： Alain Duboust ,  Wen-Chiang Tu ,  Shih-Haur Shen ,  Jimin Zhang ,  Ingemar Carlsson ,  Boguslaw A. Swedek ,  Zhihong Wang ,  Stephen Jew ,  David H. Mai ,  Huyen Tran

IPC: B24B37/013 ,  H01L21/306 ,  B24B37/04 ,  H01L21/66

Abstract: A difference between a first expected required polish time for a first substrate and a second expected required polish time for a second substrate is determined using a first pre-polish thickness and a second pre-polish thickness measured at an in-line metrology station. A duration of an initial period is determined based on the difference between the first expected required polish time and the second expected required polish time. For the initial period at a beginning of a polishing operation, no pressure is applied to whichever of the first substrate and the second substrate has a lesser expected required polish time while simultaneously pressure is applied to whichever of the first substrate and the second substrate has a greater expected required polish time. After the initial period, pressure is applied to both the first substrate and the second substrate.

公开(公告)号：US20140176949A1

公开(公告)日：2014-06-26

申请号：US14195519

申请日：2014-03-03

Applicant: Applied Materials, Inc.

Inventor： Jeffrey Drue David ,  Harry Q. Lee ,  Jun Qian ,  Jimin Zhang

IPC: G01J3/46

CPC classification number: G01J3/46 ,  B24B37/013 ,  B24B37/042 ,  B24B49/12

Abstract: A method of generating reference spectra includes polishing a first substrate in a polishing apparatus, measuring a sequence of spectra from the first substrate during polishing with an in-situ optical monitoring system, for each spectrum in the sequence of spectra, determining a best matching reference spectrum from a first plurality of first reference spectra to generate a sequence of reference spectra, calculating a value of a metric of fit of the sequence of spectra to the sequence of reference spectra, comparing the value of the metric of fit to a threshold value and determining whether to generate a second library based on the comparison, and if the second library is determined to be generated, storing the sequence of spectra as a second plurality of reference spectra.

Abstract translation: 产生参考光谱的方法包括抛光抛光装置中的第一衬底，在光谱序列中的每个光谱下，用原位光学监测系统在抛光期间测量来自第一衬底的光谱序列，确定最佳匹配参考 频谱从第一多个第一参考光谱生成参考光谱序列，计算光谱序列的拟合度量与参考光谱序列的值，将拟合度量的值与阈值进行比较，以及 基于所述比较确定是否生成第二库，以及如果确定要生成所述第二库，则将所述光谱序列存储为第二多个参考光谱。

公开(公告)号：US20140141694A1

公开(公告)日：2014-05-22

申请号：US13683911

申请日：2012-11-21

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Zhihong Wang ,  Wen-Chiang Tu ,  William H. McClintock

IPC: B24B49/12

CPC classification number: B24B49/12 ,  B24B37/005

Abstract: A method of controlling a polishing system includes polishing a substrate at a first polishing station, transporting the substrate to an in-line optical metrology system positioned between the first polishing station and a second polishing station, at the in-line optical metrology system measuring a spectrum reflected from the substrate, and generating a characterizing value from the spectrum, determining that the substrate needs rework based on the characterizing value, returning the substrate to the first polishing station and performing rework of the substrate at the first polishing station; and transporting the substrate to the second polishing station and polishing the substrate at the second polishing station.

Abstract translation: 一种控制抛光系统的方法包括：在第一抛光站处抛光衬底，将衬底传送到定位在第一抛光站和第二抛光站之间的直列式光学测量系统，其中在线光学测量系统测量 从所述基板反射的光谱，并从所述光谱产生特征值，确定所述基板根据所述特征值需要返工，将所述基板返回到所述第一抛光台并在所述第一抛光台处执行所述基板的返修; 以及将所述基板输送到所述第二研磨站，并且在所述第二研磨站处抛光所述基板。

公开(公告)号：US12285838B2

公开(公告)日：2025-04-29

申请号：US18505871

申请日：2023-11-09

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown ,  Wei Lu ,  Priscilla Diep LaRosa

IPC: B24B37/26 ,  B24B37/005 ,  B24B37/04 ,  B24B37/27

Abstract: A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.

公开(公告)号：US20220234163A1

公开(公告)日：2022-07-28

申请号：US17716941

申请日：2022-04-08

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown ,  Wei Lu ,  PrIscilla Diep

IPC: B24B37/005 ,  H01L21/321 ,  H01L21/306

Abstract: A method of chemical mechanical polishing includes rotating a polishing pad about an axis of rotation, positioning a substrate against the polishing pad, the polishing pad having a groove that is concentric with the axis of rotation, oscillating the substrate laterally across the polishing pad such that a central portion of the substrate and an edge portion of the substrate are positioned over a polishing surface of the polishing pad for a first duration, and holding the substrate substantially laterally fixed in a position such that the central portion of the substrate is positioned over the polishing surface of the polishing pad and the edge portion of the substrate is positioned over the groove for a second duration.

公开(公告)号：US20210154796A1

公开(公告)日：2021-05-27

申请号：US16953139

申请日：2020-11-19

Applicant: Applied Materials, Inc.

Inventor： Jimin Zhang ,  Jianshe Tang ,  Brian J. Brown ,  Wei Lu ,  PrIscilla Diep

IPC: B24B37/26 ,  B24B37/27 ,  B24B37/04 ,  B24B37/005

Abstract: A chemical mechanical polishing system includes a platen to hold a polishing pad, a carrier head to hold a substrate against a polishing surface of the polishing pad, and a controller. The polishing pad has a polishing control groove. The carrier is laterally movable by a first actuator across the polishing pad and rotatable by a second actuator. The controller synchronizes lateral oscillation of the carrier head with rotation of the carrier head such that over a plurality of successive oscillations of the carrier head such that when a first angular swath of an edge portion of the substrate is at an azimuthal angular position about an axis of rotation of the carrier head the first angular swath overlies the polishing surface and when a second angular swath of the edge portion of the substrate is at the azimuthal angular position the second angular swath overlies the polishing control groove.