公开(公告)号：US20230203652A1

公开(公告)日：2023-06-29

申请号：US18116609

申请日：2023-03-02

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Karthik Janakiraman ,  Aykut Aydin ,  Diwakar Kedlaya

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/30 ,  C23C16/38

CPC classification number: C23C16/45536 ,  H01J37/32009 ,  C23C16/303 ,  C23C16/38

Abstract: Exemplary deposition methods may include delivering a silicon-containing precursor and a boron-containing precursor to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the boron-containing precursor. A flow rate ratio of the hydrogen-containing precursor to either of the silicon-containing precursor or the boron-containing precursor is greater than or about 1:1. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-and-boron material on a substrate disposed within the processing region of the semiconductor processing chamber.

公开(公告)号：US20220108892A1

公开(公告)日：2022-04-07

申请号：US17063339

申请日：2020-10-05

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

公开(公告)号：US20210130174A1

公开(公告)日：2021-05-06

申请号：US17081086

申请日：2020-10-27

Applicant: Applied Materials, Inc.

Inventor： Aykut Aydin ,  Krishna Nittala ,  Karthik Janakiraman ,  Yi Yang ,  Gautam K. Hemani

IPC: C01B33/04 ,  C01B35/02

Abstract: Deposition methods may prevent or reduce crystallization of silicon in a deposited amorphous silicon film that may occur after annealing at high temperatures. The crystallization of silicon may be prevented by doping the silicon with an element. The element may be boron, carbon, or phosphorous. Doping above a certain concentration for the element prevents substantial crystallization at high temperatures and for durations at or greater than 30 minutes. Methods and devices are described.

公开(公告)号：US12205818B2

公开(公告)日：2025-01-21

申请号：US18606060

申请日：2024-03-15

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

公开(公告)号：US12131913B2

公开(公告)日：2024-10-29

申请号：US18206037

申请日：2023-06-05

Applicant: Applied Materials, Inc.

Inventor： Krishna Nittala ,  Sarah Michelle Bobek ,  Kwangduk Douglas Lee ,  Ratsamee Limdulpaiboon ,  Dimitri Kioussis ,  Karthik Janakiraman

IPC: H01L21/308 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/3081 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67207

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

公开(公告)号：US20240266171A1

公开(公告)日：2024-08-08

申请号：US18606060

申请日：2024-03-15

Applicant: Applied Materials, Inc.

Inventor： Yi Yang ,  Krishna Nittala ,  Rui Cheng ,  Karthik Janakiraman ,  Diwakar Kedlaya ,  Zubin Huang ,  Aykut Aydin

IPC: H01L21/033 ,  C23C16/38

CPC classification number: H01L21/0337 ,  C23C16/38 ,  H01L21/0332

Abstract: Embodiments of the present technology include semiconductor processing methods to make boron-and-silicon-containing layers that have a changing atomic ratio of boron-to-silicon. The methods may include flowing a silicon-containing precursor into a substrate processing region of a semiconductor processing chamber, and also flowing a boron-containing precursor and molecular hydrogen (H2) into the substrate processing region of the semiconductor processing chamber. The boron-containing precursor and the H2 may be flowed at a boron-to-hydrogen flow rate ratio. The flow rate of the boron-containing precursor and the H2 may be increased while the boron-to-hydrogen flow rate ratio remains constant during the flow rate increase. The boron-and-silicon-containing layer may be deposited on a substrate, and may be characterized by a continuously increasing ratio of boron-to-silicon from a first surface in contact with the substrate to a second surface of the boron-and-silicon-containing layer furthest from the substrate.

公开(公告)号：US11694902B2

公开(公告)日：2023-07-04

申请号：US17179103

申请日：2021-02-18

Applicant: Applied Materials, Inc.

Inventor： Krishna Nittala ,  Sarah Michelle Bobek ,  Kwangduk Douglas Lee ,  Ratsamee Limdulpaiboon ,  Dimitri Kioussis ,  Karthik Janakiraman

IPC: H01L21/308 ,  H01L21/324 ,  H01L21/67 ,  H01L21/3065

CPC classification number: H01L21/3081 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67207

Abstract: Aspects generally relate to methods, systems, and apparatus for processing substrates using one or more amorphous carbon hardmask layers. In one aspect, film stress is altered while facilitating enhanced etch selectivity. In one implementation, a method of processing a substrate includes depositing one or more amorphous carbon hardmask layers onto the substrate, and conducting a rapid thermal anneal operation on the substrate after depositing the one or more amorphous carbon hardmask layers. The rapid thermal anneal operation lasts for an anneal time that is 60 seconds or less. The rapid thermal anneal operation includes heating the substrate to an anneal temperature that is within a range of 600 degrees Celsius to 1,000 degrees Celsius. The method includes etching the substrate after conducting the rapid thermal anneal operation.

公开(公告)号：US20230146981A1

公开(公告)日：2023-05-11

申请号：US18093648

申请日：2023-01-05

Applicant: Applied Materials, Inc.

Inventor： Rui Cheng ,  Diwakar Kedlaya ,  Karthik Janakiraman ,  Gautam K. Hemani ,  Krishna Nittala ,  Alicia J. Lustgraaf ,  Zubin Huang ,  Brett Spaulding ,  Shashank Sharma ,  Kelvin Chan

IPC: H01L21/02 ,  C23C16/24 ,  C23C16/50

CPC classification number: H01L21/0262 ,  H01L21/02532 ,  C23C16/24 ,  H01L21/02664 ,  C23C16/50 ,  H01L21/02592

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region, and the substrate may be maintained at a temperature below or about 450° C. The methods may include striking a plasma of the silicon-containing precursor. The methods may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon as-deposited may be characterized by less than or about 3% hydrogen incorporation.

公开(公告)号：US20230118964A1

公开(公告)日：2023-04-20

申请号：US18068467

申请日：2022-12-19

Applicant: Applied Materials, Inc.

Inventor： Anton V. Baryshnikov ,  Aykut Aydin ,  Zubin Huang ,  Rui Cheng ,  Yi Yang ,  Diwakar Kedlaya ,  Venkatanarayana Shankaramurthy ,  Krishna Nittala ,  Karthik Janakiraman

IPC: H01L21/67

Abstract: A target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate at a process chamber of a manufacturing system is identified. Data of the target concentration profile is processed using a model. The model outputs a set of deposition process settings that corresponds to the target concentration profile. One or more operations of the deposition process are performed in accordance with the set of deposition process settings.

公开(公告)号：US20220285232A1

公开(公告)日：2022-09-08

申请号：US17191026

申请日：2021-03-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Anton V. Baryshnikov ,  Aykut Aydin ,  Zubin Huang ,  Rui Cheng ,  Yi Yang ,  Diwakar Kedlaya ,  Venkatanarayana Shankaramurthy ,  Krishna Nittala ,  Karthik Janakiraman

IPC: H01L21/66 ,  H01L21/67 ,  G05B13/02 ,  G05B13/04

Abstract: Methods and systems for controlling concentration profiles of deposited films using machine learning are provided. Data associated with a target concentration profile for a film to be deposited on a surface of a substrate during a deposition process for the substrate is provided as input to a trained machine learning model. One or more outputs of the trained machine learning model are obtained. Process recipe data identifying one or more sets of deposition process settings is determined from the one or more outputs. For each set of deposition process setting, an indication of a level of confidence that a respective set of deposition process settings corresponds to the target concentration profile for the film to be deposited on the substrate is also determined. In response to an identification of the respective set of deposition process settings with a level of confidence that satisfies a level of confidence criterion, one or more operations of the deposition process are performed in accordance with the respective set of deposition process settings.