公开(公告)号：US20030057527A1

公开(公告)日：2003-03-27

申请号：US09965373

申请日：2001-09-26

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

IPC: H01L023/58

CPC classification number: H01L23/53238 ,  C23C14/046 ,  C23C14/165 ,  C23C14/3414 ,  C23C16/045 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76871 ,  H01L2221/1089 ,  H01L2924/0002 ,  Y10S438/903 ,  H01L2924/00

Abstract: The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper allloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.

Abstract translation: 本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。 在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。 例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。 在另一个实施例中，种子层包括沉积在阻挡层上的铜合金晶种层和沉积在铜合金晶种层上的第二晶种层。 铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。 在另一个实施例中，种子层包括第一种子层和第二种子层。 第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。 第二种子层可以包括金属，例如未掺杂的铜。

公开(公告)号：US20030057526A1

公开(公告)日：2003-03-27

申请号：US09965369

申请日：2001-09-26

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Ling Chen ,  Jick Yu ,  Mei Chang

IPC: H01L023/58

CPC classification number: H01L21/76843 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76864 ,  H01L21/76871 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2221/1089 ,  H01L2924/0002 ,  H01L2924/00

Abstract: The present invention generally relates to filling of a feature by depositing a barrier layer, depositing a seed layer over the barrier layer, and depositing a conductive layer over the seed layer. In one embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer. For example, the copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. In another embodiment, the seed layer comprises a copper alloy seed layer deposited over the barrier layer and a second seed layer deposited over the copper alloy seed layer. The copper alloy seed layer may comprise copper and a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof The second seed layer may comprise a metal, such as undoped copper. In still another embodiment, the seed layer comprises a first seed layer and a second seed layer. The first seed layer may comprise a metal, such as aluminum, magnesium, titanium, zirconium, tin, and combinations thereof. The second seed layer may comprise a metal, such as undoped copper.

Abstract translation: 本发明一般涉及通过沉积阻挡层，在阻挡层上沉积种子层，以及在种子层上沉积导电层来填充特征。 在一个实施例中，种子层包括沉积在阻挡层上的铜合金种子层。 例如，铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。 在另一个实施方案中，种子层包括沉积在阻挡层上的铜合金种子层和沉积在铜合金种子层上的第二籽晶层。 铜合金种子层可以包括铜和金属，例如铝，镁，钛，锆，锡及其组合。第二种子层可以包括金属，例如未掺杂的铜。 在另一个实施例中，种子层包括第一种子层和第二种子层。 第一种子层可以包括金属，例如铝，镁，钛，锆，锡及其组合。 第二种子层可以包括金属，例如未掺杂的铜。

公开(公告)号：US20020192948A1

公开(公告)日：2002-12-19

申请号：US09882696

申请日：2001-06-15

Applicant: Applied Materials, Inc.

Inventor： Fusen Chen ,  Ling Chen ,  Gongda Yao ,  Ming Xi ,  Barry Chin ,  Mei Chang ,  Seshadri Ganguli ,  Michael X. Yang ,  Hyungsuk Alexander Yoon

IPC: H01L021/4763 ,  H01L021/44

CPC classification number: H01L21/76846 ,  H01L21/2855 ,  H01L21/28556

Abstract: A method of forming a composite barrier layer structure for use in integrated circuits is disclosed. The composite barrier layer structure formed using both physical vapor deposition (PVD) and chemical vapor deposition (CVD) techniques. The composite barrier layer structure comprises a CVD deposited layer formed on a PVD deposited layer. During the PVD process, the underlying surface of the substrate is treated, reducing the resistivity of the barrier layer structure formed thereon.

Abstract translation: 公开了一种形成用于集成电路的复合势垒层结构的方法。 使用物理气相沉积（PVD）和化学气相沉积（CVD）技术形成的复合阻挡层结构。 复合势垒层结构包括形成在PVD沉积层上的CVD沉积层。 在PVD工艺期间，处理衬底的下表面，降低其上形成的阻挡层结构的电阻率。

公开(公告)号：US20020142589A1

公开(公告)日：2002-10-03

申请号：US09775356

申请日：2001-01-31

Applicant: Applied Materials, Inc.

Inventor： Arvind Sundarrajan ,  Suraj Rengarajan ,  Michael A. Miller ,  Peijun Ding ,  Gongda Yao ,  Christophe Marcadal ,  Ling Chen

IPC: H01L021/44

CPC classification number: H01L21/76846 ,  C23C14/024 ,  C23C14/16 ,  C23C16/34 ,  H01L21/2855 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided herein is a method of depositing alpha-tantalum film on a semiconductor wafer by depositing a tantalum nitride film on a wafer; and then depositing a tantalum film over the tantalum nitride film using wafer bias. The tantalum film as deposited is in alpha phase. Also provided is a method of depositing Cu barrier and seed layer on a semiconductor wafer, comprising the steps of depositing a tantalum nitride layer on a wafer; depositing a tantalum layer over the tantalum nitride layer using wafer bias, wherein the resulting tantalum barrier layer is in alpha phase; and then depositing Cu seed layer over the alpha-tantalum barrier layer. Further provided is a method of depositing alpha-tantalum film/layer using two-chamber process, wherein the tantalum nitride and subsequently deposited tantalum films/layers can be deposited in two separate chambers, such as IMP or SIP chambers. Still further provided is a method of depositing alpha-tantalum film by depositing PVD tantalum film on CVD films.

Abstract translation: 本文提供了一种通过在晶片上沉积氮化钽膜在半导体晶片上沉积α-钽膜的方法; 然后使用晶片偏压在钽氮化物膜上沉积钽膜。 沉积的钽膜是α相。 还提供了一种在半导体晶片上沉积Cu势垒和种子层的方法，包括以下步骤：在晶片上沉积氮化钽层; 使用晶片偏置在钽氮化物层上沉积钽层，其中所得的钽阻挡层是α相; 然后在α-钽阻挡层上沉积Cu籽晶层。 进一步提供了一种使用二室工艺沉积α-钽膜/层的方法，其中氮化钽和随后沉积的钽膜/层可以沉积在两个分离的室中，例如IMP或SIP室。 还提供了通过在CVD膜上沉积PVD钽膜来沉积α-钽膜的方法。

公开(公告)号：US20040266175A1

公开(公告)日：2004-12-30

申请号：US10894774

申请日：2004-07-20

Applicant: Applied Materials, Inc.

Inventor： Fusen Chen ,  Ling Chen ,  Walter Benjamin Glenn ,  Praburam Gopalraja ,  Jianming Fu

IPC: H01L021/4763 ,  H01L021/00 ,  H01L021/44

CPC classification number: H01L21/76844 ,  C23C14/022 ,  C23C14/046 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/2855 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76873

Abstract: In a first aspect, a method is provided that includes (1) forming a first barrier layer over the sidewalls and bottom of a via using atomic layer deposition within an atomic layer deposition (ALD) chamber; (2) removing at least a portion of the first barrier layer from the bottom of the via by sputter etching; and (3) depositing a second barrier layer on the sidewalls and bottom of the via within the ALD chamber. Numerous other embodiments are provided, as are systems, methods and computer program products in accordance with these and other aspects.

公开(公告)号：US20040197492A1

公开(公告)日：2004-10-07

申请号：US10625480

申请日：2003-07-22

Applicant: Applied Materials, Inc.

Inventor： Ling Chen ,  Christophe Marcadal ,  Hyungsuk Alexander Yoon

IPC: C23C016/34

CPC classification number: H01L21/76843 ,  H01L21/28556 ,  H01L21/76856 ,  H01L21/76862

Abstract: The present invention provides a method of forming a titanium silicon nitride barrier layer on a semiconductor wafer, comprising the steps of depositing a titanium nitride layer on the semiconductor wafer; plasma-treating the titanium nitride layer in a N2/H2 plasma; and exposing the plasma-treated titanium nitride layer to a silane ambient, wherein silicon is incorporated into the titanium nitride layer as silicon nitride thereby forming a titanium silicon nitride barrier layer. Additionally, there is provided a method of improving the barrier performance of a titanium nitride layer comprising the step of introducing silicon into the titanium nitride layer such that the silicon is incorporated into the titanium nitride layer as silicon nitride. Also provided is a method of integrating copper into a semiconductor device and a method of improving copper wettability at a copper/titanium nitride interface in a semiconductor device.

Abstract translation: 本发明提供一种在半导体晶片上形成氮化硅氮化钛阻挡层的方法，包括以下步骤：在半导体晶片上沉积氮化钛层; 在N2 / H2等离子体中等离子体处理氮化钛层; 并将等离子体处理的氮化钛层暴露于硅烷环境中，其中硅作为氮化硅结合到氮化钛层中，从而形成氮化钛氮化物阻挡层。 此外，提供了一种改善氮化钛层的阻挡性能的方法，包括将硅引入氮化钛层的步骤，使得硅作为氮化硅结合到氮化钛层中。 还提供了将铜整合到半导体器件中的方法和在半导体器件中的铜/氮化钛界面处提高铜的润湿性的方法。

公开(公告)号：US20040187304A1

公开(公告)日：2004-09-30

申请号：US10741824

申请日：2003-12-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Ling Chen ,  Mei Chang

IPC: H05K003/00 ,  H05K003/36

CPC classification number: H01L21/76849 ,  C23C16/34 ,  C23C16/45525 ,  H01L21/28562 ,  Y10T29/49124 ,  Y10T29/49126 ,  Y10T29/49155

Abstract: A method for depositing a cap layer over a metal-containing interconnect is provided. In one aspect, the cap layer is formed by introducing a pulse of a metal-containing compound followed by a pulse of a nitrogen-containing compound. In one aspect, the cap layer comprises tantalum nitride. The cap layer provides good barrier and adhesive properties, thereby enhancing the electrical performance and reliability of the interconnect.

Abstract translation: 提供了一种用于在含金属互连上沉积覆盖层的方法。 在一个方面，通过引入含金属化合物的脉冲，接着是含氮化合物的脉冲来形成盖层。 在一个方面，盖层包括氮化钽。 盖层提供良好的阻隔性和粘合性，从而增强互连的电性能和可靠性。

公开(公告)号：US20040069227A1

公开(公告)日：2004-04-15

申请号：US10268438

申请日：2002-10-09

Applicant: Applied Materials, Inc.

Inventor： Vincent Ku ,  Ling Chen ,  Howard Grunes ,  Hua Chung

IPC: C23C016/00

CPC classification number: C23C16/45544 ,  C23C16/4409 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/4585

Abstract: An apparatus and method for performing uniform gas flow in a processing chamber is provided. In one embodiment, an apparatus is an edge ring that includes an annular body having an annular seal projecting therefrom is provided. The seal is coupled to a side of the annular body opposite a side adapted to seat on the substrate support. In another embodiment, a processing system is provided that includes a chamber body, a lid, a substrate support and a plurality of flow control orifices. The lid is disposed on the chamber body and defining an interior volume therewith. The substrate support is disposed in the interior volume and at least partially defines a processing region with the lid. The flow control orifices are disposed between the substrate support and the lid. The flow control orifices are adapted to control flow of gases exiting the processing region.

Abstract translation: 提供了一种在处理室中进行均匀气体流动的装置和方法。 在一个实施例中，一种装置是一种边缘环，其包括具有从其突出的环形密封件的环形主体。 密封件联接到环形体的与适于安置在基板支撑件上的一侧相对的一侧。 在另一个实施例中，提供了一种处理系统，其包括室主体，盖，衬底支撑件和多个流量控制孔。 盖子设置在室主体上并且与其限定内部容积。 衬底支撑件设置在内部容积中并且至少部分地限定具有盖子的处理区域。 流量控制孔布置在基板支撑件和盖子之间。 流量控制孔适于控制离开处理区域的气体流。

公开(公告)号：US20040018304A1

公开(公告)日：2004-01-29

申请号：US10193574

申请日：2002-07-10

Applicant: Applied Materials, Inc.

Inventor： Hua Chung ,  Ling Chen ,  Vincent W. Ku

IPC: H05H001/24 ,  C23C016/06 ,  C23C016/00 ,  H01L021/44 ,  C23C016/22 ,  C23C016/34

CPC classification number: C23C16/45525 ,  C23C16/34 ,  C23C16/4488 ,  C23C16/452

Abstract: A method for depositing a film on a substrate is provided. In one aspect, the method includes providing a metal-containing precursor to an activation zone, and activating the metal-containing precursor to form an activated precursor. The activated precursor gas is transported to a reaction chamber, and a film is deposited on the substrate using a cyclical deposition process, wherein the activated precursor gas and a reducing gas are alternately adsorbed on the substrate. Also provided is a method of depositing a film on a substrate using an activated reducing gas.

Abstract translation: 提供了一种在基板上沉积膜的方法。 在一个方面，所述方法包括向活化区提供含金属的前体，以及活化含金属的前体以形成活化的前体。 活化的前体气体被输送到反应室，并且使用循环沉积方法将膜沉积在基板上，其中活化的前体气体和还原气体交替地吸附在基板上。 还提供了使用活化的还原气体将膜沉积在基板上的方法。

公开(公告)号：US20040009336A1

公开(公告)日：2004-01-15

申请号：US10194808

申请日：2002-07-11

Applicant: Applied Materials, Inc.

Inventor： Christophe Marcadal ,  Ling Chen

IPC: B32B009/00

CPC classification number: H01L21/76843 ,  C23C16/34 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/76846 ,  Y10T428/24926

Abstract: Methods and an apparatus of forming a titanium silicon nitride (TiSiN) layer are disclosed. The titanium silicon nitride (TiSiN) layer may be formed using a cyclical deposition process by alternately adsorbing a titanium-containing precursor, a silicon-containing gas and a nitrogen-containing gas on a substrate. The titanium-containing precursor, the silicon-containing gas and the nitrogen-containing gas react to form the titanium silicon nitride (TiSiN) layer on the substrate. The formation of the titanium silicon nitride (TiSiN) layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, a titanium silicon nitride (TiSiN) layer may be used as a diffusion barrier for a copper metallization process.

Abstract translation: 公开了形成氮化硅钛（TiSiN）层的方法和装置。 可以通过在基板上交替吸附含钛前体，含硅气体和含氮气体的循环沉积工艺来形成氮化钛（TiSiN）层。 含钛前体，含硅气体和含氮气体反应以在衬底上形成氮化钛（TiSiN）层。 氮化钛（TiSiN）层的形成与集成电路制造工艺兼容。 在一个集成电路制造工艺中，可以使用氮化硅钛（TiSiN）层作为铜金属化工艺的扩散阻挡层。