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公开(公告)号：US20220221783A1
公开(公告)日：2022-07-14
申请号：US17145592
申请日：2021-01-11
Applicant: Applied Materials, Inc.
Inventor： Shiyu Liu , Shuwei Liu , Vibhu Jindal
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of ruthenium (Ru) and silicon (Si); an alloy tantalum (Ta) and platinum (Pt); and an alloy of ruthenium (Ru) and molybdenum (Mo).
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公开(公告)号：US20220107556A1
公开(公告)日：2022-04-07
申请号：US17063783
申请日：2020-10-06
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Shiyu Liu , Vibhu Jindal
IPC: G03F1/24 , G03F1/54 , H01L21/033
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.
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公开(公告)号：US11249388B2
公开(公告)日：2022-02-15
申请号：US16777171
申请日：2020-01-30
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Vibhu Jindal
IPC: G03F1/24
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from carbon and antimony.
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公开(公告)号：US20210325771A1
公开(公告)日：2021-10-21
申请号：US17229299
申请日：2021-04-13
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Vibhu Jindal
IPC: G03F1/24 , G03F1/54 , H01L21/033
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from carbon and antimony.
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公开(公告)号：US20200371430A1
公开(公告)日：2020-11-26
申请号：US16877967
申请日：2020-05-19
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Vibhu Jindal
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from bismuth and iron.
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Patent Agency Ranking
公开(公告)号：US20200333700A1
公开(公告)日：2020-10-22
申请号：US16850665
申请日：2020-04-16
Applicant: Applied Materials, Inc.
Inventor： Wen Xiao , Vibhu Jindal , Weimin Li , Shuwei Liu
Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.
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公开(公告)号：US20200249557A1
公开(公告)日：2020-08-06
申请号：US16777198
申请日：2020-01-30
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Vibhu Jindal , Halbert Chong
IPC: G03F1/22
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium, germanium and antimony.
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公开(公告)号：US20200241409A1
公开(公告)日：2020-07-30
申请号：US16750586
申请日：2020-01-23
Applicant: Applied Materials, Inc.
Inventor： Wen Xiao , Sanjay Bhat , Shuwei Liu , Vibhu Jindal
Abstract: Physical vapor deposition target assemblies, PVD chambers including target assemblies and methods of manufacturing EUV mask blanks using such target assemblies are disclosed. The target assembly includes a target shield adjacent the target and surrounding the peripheral edges of the target, the target shield comprising an insulating material and a non-insulating outer peripheral fixture to secure the target shield to the assembly.
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公开(公告)号：US11720013B2
公开(公告)日：2023-08-08
申请号：US17708593
申请日：2022-03-30
Applicant: Applied Materials, Inc.
Inventor： Wen Xiao , Vibhu Jindal , Weimin Li , Shuwei Liu
CPC classification number: G03F1/24 , G02B5/0891 , G03F7/7015 , G03F7/70316
Abstract: A multilayer stack in the form of a Bragg reflector comprising a graded interfacial layer and a method of manufacturing are disclosed. The graded interfacial layer eliminates the formation of low-reflectivity interfaces in a multilayer stack and reduces roughness of interfaces in a multilayer stack.
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公开(公告)号：US20230176468A1
公开(公告)日：2023-06-08
申请号：US18106771
申请日：2023-02-07
Applicant: Applied Materials, Inc.
Inventor： Shuwei Liu , Shiyu Liu , Vibhu Jindal
IPC: G03F1/24
CPC classification number: G03F1/24
Abstract: Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer comprising an alloy selected from an alloy of tantalum, iridium and antimony; an alloy of iridium and antimony; and an alloy of tantalum, ruthenium and antimony.
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