公开(公告)号：US20210005435A1

公开(公告)日：2021-01-07

申请号：US16460277

申请日：2019-07-02

Applicant: APPLIED MATERIALS, INC.

Inventor： Soonwook Jung ,  Laksheswar Kalita ,  Tae S Cho ,  Kenneth D Schatz

IPC: H01J37/32 ,  G01N21/3504

Abstract: Methods, apparatus, and systems for substrate processing are provided. Apparatus can include a controller; a processing chamber; a substrate supporting a substrate; and an infrared sensor assembly disposed adjacent the substrate support and comprising: a sample chamber one of made from or coated with nickel or nickel alloy and configured to collect chemicals which are present while the substrate is being processed in the processing chamber; an IR light source disposed at one end of the sample chamber and an IR detector disposed at an opposite end of the sample chamber; and a pair of windows positioned in an optical path between the IR light source and the IR detector, wherein the IR light source transmits IR light along the optical path and the IR detector detects the transmitted IR light and transmits a signal to the controller for determining a concentration of the chemicals present in the processing chamber.

公开(公告)号：US10593560B2

公开(公告)日：2020-03-17

申请号：US15909812

申请日：2018-03-01

Applicant: Applied Materials, Inc.

Inventor： Tae Seung Cho ,  Soonwook Jung ,  Junghoon Kim ,  Satoru Kobayashi ,  Kenneth D. Schatz ,  Soonam Park ,  Dmitry Lubomirsky

IPC: C23C16/00 ,  H01L21/316 ,  H01L21/3213 ,  H01L21/67 ,  H01L21/3105 ,  H01J37/32 ,  H05H1/46

Abstract: Exemplary magnetic induction plasma systems for generating plasma products are provided. The magnetic induction plasma system may include a first plasma source including a plurality of first sections and a plurality of second sections arranged in an alternating manner and fluidly coupled with each other such that at least a portion of plasma products generated inside the first plasma source may circulate through at least one of the plurality of first sections and at least one of the plurality of second sections inside the first plasma source. Each of the plurality of second sections may include a dielectric material. The system may further include a plurality of first magnetic elements each of which may define a closed loop. Each of the plurality of second sections may define a plurality of recesses for receiving one of the plurality of first magnetic elements therein.

公开(公告)号：US11735441B2

公开(公告)日：2023-08-22

申请号：US16707379

申请日：2019-12-09

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/324

CPC classification number: H01L21/67069 ,  H01J37/3244 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32495 ,  H01J37/32513 ,  H01J37/32816 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/6719 ,  H01L21/67109 ,  H01J2237/334

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.

公开(公告)号：US20230096706A1

公开(公告)日：2023-03-30

申请号：US17486473

申请日：2021-09-27

Applicant: Applied Materials, Inc.

Inventor： Soonwook Jung ,  Kenneth D. Schatz ,  Hunkee Cho

IPC: H01J37/32 ,  G05B19/4099 ,  G05B19/418

Abstract: A method of characterizing plasmas during semiconductor processes may include receiving operating conditions for a semiconductor process, where the semiconductor process may be configured to generate a plasma inside of a chamber of a semiconductor processing system. The method may also include providing the operating conditions for the semiconductor process as inputs to a model, where the model may have been trained to characterize plasmas in the chamber. The method may also include generating, using the model, a characterization of the plasma in the chamber resulting from the operating conditions of the semiconductor process.

公开(公告)号：US11587765B2

公开(公告)日：2023-02-21

申请号：US17100927

申请日：2020-11-22

Applicant: Applied Materials, Inc.

Inventor： Soonwook Jung ,  Kenneth D. Schatz

IPC: H01J37/32 ,  H01L21/311

Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.

公开(公告)号：US20220165539A1

公开(公告)日：2022-05-26

申请号：US17100927

申请日：2020-11-22

Applicant: Applied Materials, Inc.

Inventor： Soonwook Jung ,  Kenneth D. Schatz

IPC: H01J37/32 ,  H01L21/311

Abstract: A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.

公开(公告)号：US10541184B2

公开(公告)日：2020-01-21

申请号：US15646845

申请日：2017-07-11

Applicant: Applied Materials, Inc.

Inventor： Soonwook Jung ,  Soonam Park ,  Dmitry Lubomirsky

IPC: H01L21/3065 ,  H01L21/66 ,  H01L21/67 ,  G01N21/31 ,  G01N21/67

Abstract: Embodiments may include a method of etching. The method may also include flowing a gas mixture through a plasma discharge to form plasma effluents. The method may further include flowing the plasma effluents through a plurality of apertures to a layer on a substrate. The layer may have a first thickness. In addition, the method may include etching the layer with the plasma effluents. The method may also include measuring the intensity of emission from a reaction of plasma effluents with the layer. The method may further include summing the intensity of the emission while the plasma effluents are being flowed to the layer to obtain an integrated intensity. The method may then include comparing the integrated intensity to a reference value corresponding to a target etch thickness. The method may include extinguishing the plasma discharge when the integrated intensity is equal to or greater than the reference value.

公开(公告)号：US20180337024A1

公开(公告)日：2018-11-22

申请号：US15981089

申请日：2018-05-16

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Soonam Park ,  Raymond W. Lu ,  Phong Pham ,  Edwin C. Suarez

IPC: H01J37/32 ,  H01L21/3065 ,  C23C16/455

Abstract: Exemplary semiconductor processing systems may include a processing chamber, and may include a remote plasma unit coupled with the processing chamber. Exemplary systems may also include an adapter coupled with the remote plasma unit. The adapter may include a first end and a second end opposite the first end. The adapter may define an opening to a central channel at the first end, and the central channel may be characterized by a first cross-sectional surface area. The adapter may define an exit from a second channel at the second end, and the adapter may define a transition between the central channel and the second channel within the adapter between the first end and the second end. The adapter may define a third channel between the transition and the second end of the adapter, and the third channel may be fluidly isolated from the central channel and the second channel.

公开(公告)号：US09922840B2

公开(公告)日：2018-03-20

申请号：US14793508

申请日：2015-07-07

Applicant: Applied Materials, Inc.

Inventor： Soonam Park ,  Kenneth D. Schatz ,  Soonwook Jung ,  Dmitry Lubomirsky

IPC: H01L21/311 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32 ,  H01L21/67

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/67069

Abstract: Methods of selectively etching an exposed portion of a patterned substrate relative to a second exposed portion are described. The etching process is a gas phase etch which uses an oxidizing precursor unexcited in any plasma prior to combination with plasma effluents formed in a remote plasma from an inert precursor. The plasma effluents may be combined with the oxidizing precursor in a plasma-free remote chamber region and/or in a plasma-free substrate processing region. The combination of the plasma effluents excites the oxidizing precursor and removes material from the exposed portion of the patterned substrate. The etch rate is controllable and selectable by adjusting the flow rate of the oxidizing precursor or the unexcited/plasma-excited flow rate ratio.

公开(公告)号：US20170338134A1

公开(公告)日：2017-11-23

申请号：US15159530

申请日：2016-05-19

Applicant: Applied Materials, Inc.

Inventor： Tien Fak Tan ,  Lok Kee Loh ,  Dmitry Lubomirsky ,  Soonwook Jung ,  Martin Yue Choy ,  Soonam Park

IPC: H01L21/67 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/324

CPC classification number: H01L21/67069 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32495 ,  H01J37/32513 ,  H01J37/32816 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/324 ,  H01L21/67109 ,  H01L21/6719

Abstract: Semiconductor systems and methods may include a semiconductor processing chamber having a gas box defining an access to the semiconductor processing chamber. The chamber may include a spacer characterized by a first surface with which the gas box is coupled, and the spacer may define a recessed ledge on an interior portion of the first surface. The chamber may include a support bracket seated on the recessed ledge that extends along a second surface of the spacer. The chamber may also include a gas distribution plate seated on the support bracket.