公开(公告)号：US20240331975A1

公开(公告)日：2024-10-03

申请号：US18129285

申请日：2023-03-31

Applicant: Applied Materials, Inc.

Inventor： Shuchi Sunil Ojha ,  Soham Asrani ,  Praket Prakash Jha ,  Bhargav S. Citla ,  Jingmei Liang

IPC: H01J37/32 ,  H01L21/02

CPC classification number: H01J37/32146 ,  H01L21/02532 ,  H01L21/0262 ,  H01J37/32816 ,  H01J2237/182 ,  H01J2237/2001 ,  H01J2237/332 ,  H01J2237/3343 ,  H01J2237/336

Abstract: Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming plasma effluents of the hydrogen-containing precursor. The methods may include etching the silicon-containing material from a sidewall of the feature within the substrate with the plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining silicon-containing material within the feature defined within the substrate.

公开(公告)号：US20240318311A1

公开(公告)日：2024-09-26

申请号：US18610654

申请日：2024-03-20

Applicant: ASM IP Holding B.V.

Inventor： Agung Setiadi ,  Hiroki Matsuda ,  Jun Kawahara

IPC: C23C16/455 ,  C23C16/34 ,  C23C16/515 ,  H01J37/32 ,  H01L21/02

CPC classification number: C23C16/45542 ,  C23C16/345 ,  C23C16/45534 ,  C23C16/515 ,  H01J37/32146 ,  H01J37/3244 ,  H01J37/32816 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/02315 ,  H01J2237/332

Abstract: Methods and systems for pretreating a surface prior to depositing silicon nitride on the surface are disclosed. Exemplary methods include pretreating the surface by exposing the surface to activated species formed from one or more gases comprising nitrogen and hydrogen under conditions that reduce incubation time for depositing the silicon nitride.

公开(公告)号：US20240290609A1

公开(公告)日：2024-08-29

申请号：US18572959

申请日：2022-06-08

Applicant: Tokyo Electron Limited

Inventor： Tadahiro ISHIZAKA ,  Kunihiro TADA ,  Takashi SAKUMA ,  Yoshiyuki HANADA

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/04 ,  C23C16/08 ,  C23C16/42 ,  C23C16/50 ,  H01J37/32 ,  H01L21/285 ,  H01L21/768

CPC classification number: H01L21/02068 ,  C23C16/0227 ,  C23C16/045 ,  C23C16/08 ,  C23C16/42 ,  C23C16/50 ,  H01J37/3244 ,  H01J37/32733 ,  H01J37/32816 ,  H01J37/32899 ,  H01L21/28518 ,  H01L21/76877 ,  H01J2237/3321

Abstract: A substrate processing method includes: a first oxide film removal process of supplying a first processing gas to a substrate, which includes a first metal film and a silicon-containing film, to remove a metal oxide film on a surface of the first metal film; a silicide formation process of supplying a second processing gas to the substrate to for a silicide on a surface of the silicon-containing film; and a film formation process of supplying a film formation gas to the substrate to deposit a second metal film on the first metal film and the silicide, after the first oxide removal process and the silicide formation process.

公开(公告)号：US12062525B2

公开(公告)日：2024-08-13

申请号：US17679900

申请日：2022-02-24

Applicant: PSK INC.

Inventor： Jong Chan Lee ,  Ju Young Park ,  Jun Young Cho ,  Hyeon Gyeong Shin

IPC: H01J37/32 ,  H01L21/687

CPC classification number: H01J37/32715 ,  H01J37/32568 ,  H01J37/32816 ,  H01L21/68742 ,  H01J2237/0206 ,  H01J2237/20235 ,  H01J2237/334

Abstract: A substrate treating apparatus includes a housing, treating space and support unit to support a substrate, dielectric plate, gas supply unit, and plasma source to generate a plasma and including a top edge electrode above the edge region supported by the support unit and bottom edge electrode below the edge region supported by the support unit, which includes a support plate having an inner space and vacuum hole that communicates with the inner space and sucking the substrate on the top surface. A lift pin assembly can transfer the substrate between an outside transfer unit and the support plate. A decompression unit can apply negative pressure to the inner space. The lift pin assembly includes a base plate and through hole penetrating the base plate to provide negative pressure in a region under the base plate to a region over the base plate. Lift pins protrude from the base plate and support a bottom substrate surface. A driver can lift/lower the base plate within the inner space.

公开(公告)号：US12057299B2

公开(公告)日：2024-08-06

申请号：US17486210

申请日：2021-09-27

Applicant: Applied Materials, Inc.

Inventor： Tuck Foong Koh ,  John Leonard Sudijono

IPC: H01L21/3065 ,  C23C2/02 ,  C23C14/02 ,  C23C14/12 ,  C23C14/54 ,  H01J37/32

CPC classification number: H01J37/32816 ,  C23C2/024 ,  C23C14/021 ,  C23C14/12 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32449 ,  H01J2237/332 ,  H01J2237/334 ,  H01J2237/335

Abstract: A method for cleaning contacts on a substrate incorporates ion control to selectively remove oxides. The method includes exposing the substrate to ions of an inert gas, supplying a first RF frequency of a first bias power supply to a substrate support, supplying a second RF frequency of a second bias power supply to a substrate support, and adjusting a first power level of the first RF frequency and a second power level of the second RF frequency to selectively remove oxide from at least one contact on the substrate while inhibiting sputtering of polymer material wherein the oxide removal is selective over removal of polymer material surrounding the at least one contact.

公开(公告)号：US20240240324A1

公开(公告)日：2024-07-18

申请号：US18615192

申请日：2024-04-04

Applicant: Tokyo Electron Limited ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Masaru HORI ,  Makoto SEKINE ,  Hirotsugu SUGIURA ,  Tsuyoshi MORIYA ,  Satoshi TANAKA ,  Yoshinori MORISADA

IPC: C23C16/52 ,  C23C16/26 ,  H01J37/32 ,  H01L21/033

CPC classification number: C23C16/52 ,  C23C16/26 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/0332 ,  H01J2237/332

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)≥0.5.

公开(公告)号：US20240213032A1

公开(公告)日：2024-06-27

申请号：US18395788

申请日：2023-12-26

Applicant: Tokyo Electron Limited

Inventor： Koki MUKAIYAMA ,  Takuya SAWANO

IPC: H01L21/311 ,  C23C16/04 ,  C23C16/08 ,  H01J37/32 ,  H01L21/033

CPC classification number: H01L21/31122 ,  C23C16/045 ,  C23C16/08 ,  H01J37/32724 ,  H01J37/32816 ,  H01L21/0332 ,  H01L21/31116 ,  H01J2237/3321 ,  H01J2237/3341 ,  H01J2237/3346

Abstract: An etching method includes (a) providing a substrate having an etching target film and a mask on the etching target film, on a substrate support within a chamber; (b) etching the etching target film to form a recess under a condition that a pressure within the chamber is controlled to a first pressure, and a temperature of the substrate support is controlled to a first temperature; and (c) forming a metal-containing film on a portion of a side wall of the recess by using plasma generated from a processing gas containing a metal-containing gas, under a condition that the pressure within the chamber is controlled to a second pressure higher than the first pressure, and the temperature of the substrate support is controlled to a second temperature equal to or less than the first temperature.

公开(公告)号：US20240203706A1

公开(公告)日：2024-06-20

申请号：US18067378

申请日：2022-12-16

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Toshihiko Iwao ,  Peter Lowell George Ventzek

IPC: H01J37/32 ,  C23C16/34 ,  C23C16/455 ,  C23C16/505

CPC classification number: H01J37/32724 ,  C23C16/345 ,  C23C16/4554 ,  C23C16/45553 ,  C23C16/505 ,  H01J37/32082 ,  H01J37/32816 ,  H01J37/317 ,  H01J2237/2001 ,  H01J2237/332

Abstract: A method of processing a substrate that includes: in a plasma processing chamber, performing an atomic layer deposition (ALD) process including cycles of deposition while maintaining a temperature of a substrate support between 25° C. and 450° C., one of the cycles including exposing the substrate loaded in a plasma processing chamber to a first precursor to modify a surface of the substrate with the first precursor, after exposing the substrate, purging the plasma processing chamber with an inert gas, exposing the modified surface of the substrate to a first plasma generated from the inert gas, and flowing a second precursor into the plasma processing chamber, after exposing to the first plasma, to form a conformal layer from the modified surface.

公开(公告)号：US12001194B2

公开(公告)日：2024-06-04

申请号：US16656572

申请日：2019-10-17

Applicant: SEMES CO., LTD.

Inventor： Seung Yeon Kim

IPC: G05B19/41 ,  G05B19/418 ,  H01J37/32 ,  H01L21/67

CPC classification number: G05B19/4184 ,  H01J37/3288 ,  G05B2219/45031 ,  H01J37/3211 ,  H01J37/32449 ,  H01J37/32724 ,  H01J37/32816 ,  H01J2237/186 ,  H01J2237/2485 ,  H01J2237/332 ,  H01J2237/3341 ,  H01L21/67017

Abstract: Disclosed is a substrate processing apparatus including one or more operation elements, the substrate processing apparatus includes a processing unit controlling operation of the substrate processing apparatus, and a controller controlling independently the one or more operation elements of the substrate processing apparatus, monitoring operation of the processing unit, and maintaining operation states of the one or more operation elements when the operation of the processing unit is restarted or terminated.

公开(公告)号：US11993849B2

公开(公告)日：2024-05-28

申请号：US17415104

申请日：2019-12-04

Applicant: Tokyo Electron Limited ,  National University Corporation Tokai National Higher Education and Research System

Inventor： Masaru Hori ,  Makoto Sekine ,  Hirotsugu Sugiura ,  Tsuyoshi Moriya ,  Satoshi Tanaka ,  Yoshinori Morisada

IPC: C23C16/52 ,  C23C16/26 ,  H01J37/32 ,  H01L21/033

CPC classification number: C23C16/52 ,  C23C16/26 ,  H01J37/32449 ,  H01J37/32816 ,  H01L21/0332 ,  H01J2237/332

Abstract: According to one embodiment, there is provided a carbon hard mask laminated on an etching target film, in which the concentration ratio of a methylene group CH2 and a methyl group CH3 contained in the carbon hard mask satisfies the expression CH2/(CH2+CH3)≥0.5.