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    SYSTEMS AND PROCESSES FOR PLASMA TUNING
    3.
    发明申请
    SYSTEMS AND PROCESSES FOR PLASMA TUNING 审中-公开

    公开(公告)号：US20200090907A1

    公开(公告)日：2020-03-19

    申请号：US16134200

    申请日：2018-09-18

    Applicant: Applied Materials, Inc.

    Inventor： Junghoon Kim ,  Tae Cho ,  Theodore Wou ,  Soonam Park ,  Dmitry Lubomirsky

    IPC: H01J37/32 ,  C23C16/513 ,  H01J37/305 ,  H01L21/3065

    Abstract: Systems and methods may be used to enact plasma tuning. Exemplary semiconductor processing chambers may include a pedestal positioned within the chamber and configured to support a substrate. The pedestal may include an electrode operable to form a plasma within a processing region of the semiconductor processing chamber, with the processing region at least partially defined by the pedestal. The pedestal may include a heater embedded within the pedestal, and the heater may be coupled with a power supply. An RF filter may be coupled between the power supply and the heater. A shunt capacitor may also be coupled between the RF filter and the heater.

    PLASMA HEALTH DETERMINATION IN SEMICONDUCTOR SUBSTRATE PROCESSING REACTORS
    5.
    发明申请
    PLASMA HEALTH DETERMINATION IN SEMICONDUCTOR SUBSTRATE PROCESSING REACTORS 审中-公开

    公开(公告)号：US20180366378A1

    公开(公告)日：2018-12-20

    申请号：US15625454

    申请日：2017-06-16

    Applicant: Applied Materials, Inc.

    Inventor： Junghoon Kim ,  Soonam Park ,  Tae Seung Cho ,  Dmitry Lubomirsky ,  Nikolai Kalnin

    IPC: H01L21/66 ,  H01L21/67 ,  H01J37/32 ,  C23C16/513

    Abstract: Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

    Methods and apparatus for processing a substrate
    6.
    发明授权
    Methods and apparatus for processing a substrate 有权

    公开(公告)号：US11361941B2

    公开(公告)日：2022-06-14

    申请号：US16906875

    申请日：2020-06-19

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Junghoon Kim ,  Tae Seung Cho ,  Dmitry Lubomirsky ,  Toan Tran

    IPC: H01J37/32

    Abstract: Methods and apparatus for processing a substrate are herein described. For example, a processing chamber for processing a substrate includes a chamber body defining a processing volume; a radio frequency (RF) power source configured to deliver RF energy to the processing volume for processing a substrate; a substrate support comprising an electrode; an AC power supply configured to supply power to the processing chamber; an RF filter circuit connected between the electrode and the AC power supply; and a controller configured to monitor an RF voltage at the RF filter circuit that is indirectly induced into the electrode by the RF power source during operation, and to determine a processing state in the processing volume based on the monitored RF voltage.

    ATOMIC LAYER ETCHING PROCESSES
    8.
    发明申请
    ATOMIC LAYER ETCHING PROCESSES 审中-公开

    公开(公告)号：US20190122902A1

    公开(公告)日：2019-04-25

    申请号：US15792252

    申请日：2017-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Jungmin Ko ,  Tom Choi ,  Junghoon Kim ,  Sean Kang ,  Mang-Mang Ling

    IPC: H01L21/67 ,  H01J37/32

    CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32899 ,  H01J2237/334 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/32136 ,  H01L21/67069 ,  H01L21/68742

    Abstract: Processing methods may be performed to remove unwanted materials from a substrate. The methods may include forming a remote plasma of an inert precursor in a remote plasma region of a processing chamber. The methods may include forming a bias plasma of the inert precursor within a processing region of the processing chamber. The methods may include modifying a surface of an exposed material on a semiconductor substrate within the processing region of the processing chamber with plasma effluents of the inert precursor. The methods may include extinguishing the bias plasma while maintaining the remote plasma. The methods may include adding an etchant precursor to the remote plasma region to produce etchant plasma effluents. The methods may include flowing the etchant plasma effluents to the processing region of the processing chamber. The methods may also include removing the modified surface of the exposed material from the semiconductor substrate.

    Plasma health determination in semiconductor substrate processing reactors
    9.
    发明授权
    Plasma health determination in semiconductor substrate processing reactors 有权

    公开(公告)号：US10920320B2

    公开(公告)日：2021-02-16

    申请号：US15625454

    申请日：2017-06-16

    Applicant: Applied Materials, Inc.

    Inventor： Junghoon Kim ,  Soonam Park ,  Tae Seung Cho ,  Dmitry Lubomirsky ,  Nikolai Kalnin

    IPC: C23C16/513 ,  B81C99/00 ,  H01L21/66 ,  H01L21/3065 ,  C23C16/505 ,  H01L21/311 ,  H01J37/32

    Abstract: Methods of monitoring a plasma while processing a semiconductor substrate are described. In embodiments, the methods include determining the difference in power between the power delivered from the plasma power supply and the power received by the plasma in a substrate processing chamber. The power received may be determined using a V/I sensor positioned after the matching circuit. The power reflected or the power lost is the difference between the delivered power and the received power. The process may be terminated by removing the delivered power if the reflected power is above a setpoint. The VRF may further be fourier transformed into frequency space and compared to the stored fourier transform of a healthy plasma process. Missing frequencies from the VRF fourier transform may independently or further indicate an out-of-tune plasma process and the process may be terminated.

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