公开(公告)号：US20160254123A1

公开(公告)日：2016-09-01

申请号：US15149923

申请日：2016-05-09

Applicant: Applied Materials, Inc.

Inventor： Michael D. WILLWERTH ,  David PALAGASHVILI ,  Valentin N. TODOROW ,  Stephen YUEN

IPC: H01J37/32 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H05B6/02

CPC classification number: H01J37/321 ,  C23C14/22 ,  C23C16/44 ,  H01F21/12 ,  H01J37/32321 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32935 ,  H01J2237/327 ,  H01J2237/334 ,  H01L21/67017 ,  H01L21/67069 ,  H05B6/02 ,  H05B6/108

Abstract: A shielded lid heater lid heater suitable for use with a plasma processing chamber, a plasma processing chamber having a shielded lid heater and a method for plasma processing are provided. The method and apparatus enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, a process for tuning a plasma processing chamber is provided that include determining a position of a plasma within the processing chamber, selecting an inductance and/or position of an inductor coil coupled to a lid heater that shifts the plasma location from the determined position to a target position, and plasma processing a substrate with the inductor coil having the selected inductance and/or position.

Abstract translation: 提供适用于等离子体处理室的屏蔽盖加热器盖加热器，具有屏蔽盖加热器的等离子体处理室和等离子体处理方法。 该方法和装置增强等离子体处理室内的等离子体位置的位置控制，并且可用于蚀刻，沉积，植入和热处理系统以及其它需要等离子体位置控制的应用中。 在一个实施例中，提供了一种用于调谐等离子体处理室的过程，其包括确定处理室内的等离子体的位置，选择耦合到盖式加热器的电感线圈的电感和/或位置，其将等离子体位置从 确定位置到目标位置，以及等离子体处理具有所选择的电感和/或位置的电感线圈的衬底。

公开(公告)号：US20150294843A1

公开(公告)日：2015-10-15

申请号：US14249042

申请日：2014-04-09

Applicant: Applied Materials, Inc.

Inventor： Feng CHEN ,  Benjamin SCHWARZ ,  Valentin N. TODOROW ,  Li ZHANG ,  Tza-Jing GUNG ,  Lu LIU

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

CPC classification number: H01J37/32862 ,  H01J37/32853

Abstract: Embodiments of the present invention generally provide chamber cleaning methods for cleaning a plasma processing chamber with minimum likelihood of erosion occurred on the chamber components so as to extend service life of chamber components for semiconductor plasma applications. In one embodiment, a method of extending chamber component life in a processing chamber includes supplying a cleaning gas mixture into a plasma processing chamber, applying a RF source power to the plasma processing chamber, and applying a voltage to a substrate support assembly disposed in the processing chamber during cleaning.

Abstract translation: 本发明的实施例通常提供用于清洁等离子体处理室的室清洁方法，其中在室部件上发生最小的侵蚀可能性，以延长半导体等离子体应用的室部件的使用寿命。 在一个实施例中，一种在处理室中延长腔室部件寿命的方法包括将清洁气体混合物供应到等离子体处理室中，将RF源功率施加到等离子体处理室，以及向设置在等离子体处理室中的衬底支撑组件施加电压 处理室清洁。

公开(公告)号：US20140345803A1

公开(公告)日：2014-11-27

申请号：US14455409

申请日：2014-08-08

Applicant: Applied Materials, Inc.

Inventor： Valentin N. TODOROW ,  John P. HOLLAND ,  Michael D. WILLWERTH

IPC: C23F4/00 ,  H01L21/67

CPC classification number: C23F4/00 ,  C23F1/08 ,  H01J37/321 ,  H01J37/32633 ,  H01L21/67069

Abstract: A method and apparatus for etching a substrate using a spatially modified plasma is provided herein. In one embodiment, the method includes providing a process chamber having a plasma stabilizer disposed above a substrate support pedestal. A substrate is placed upon the pedestal. A process gas is introduced into the process chamber and a plasma is formed from the process gas. The substrate is etched with a plasma having an ion density to radical density ratio defined by the plasma stabilizer.

Abstract translation: 本文提供了使用空间修正等离子体蚀刻衬底的方法和设备。 在一个实施例中，该方法包括提供具有设置在基板支撑基座上方的等离子体稳定器的处理室。 将基板放置在基座上。 工艺气体被引入到处理室中，并且从处理气体形成等离子体。 用等离子体蚀刻衬底，该等离子体具有由等离子体稳定剂限定的离子密度与自由基密度比。