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    Solar fuels generator
    11.
    发明授权
    Solar fuels generator 有权

    公开(公告)号：US10242806B2

    公开(公告)日：2019-03-26

    申请号：US15982832

    申请日：2018-05-17

    Applicant: CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Nathan S. Lewis ,  Joshua M. Spurgeon ,  William C. West ,  Chengxiang Xiang

    IPC: C25B1/00 ,  C25B9/08 ,  H01G9/20

    Abstract: The solar fuels generator includes an ionically conductive separator between a gaseous first phase and a second phase. A photoanode uses one or more components of the first phase to generate cations during operation of the solar fuels generator. A cation conduit is positioned provides a pathway along which the cations travel from the photoanode to the separator. The separator conducts the cations. A second solid cation conduit conducts the cations from the separator to a photocathode.

    SOLAR FUELS GENERATOR
    12.
    发明申请
    SOLAR FUELS GENERATOR 审中-公开
    太阳能燃油发电机

    公开(公告)号：US20170037523A1

    公开(公告)日：2017-02-09

    申请号：US15332236

    申请日：2016-10-24

    Applicant: California Institute of Technology

    Inventor： Nathan S. Lewis ,  Joshua M. Spurgeon

    IPC: C25B9/08 ,  C25B13/02 ,  C25B1/10 ,  C25B1/00

    CPC classification number: C25B9/08 ,  C25B1/003 ,  C25B1/10 ,  C25B13/02 ,  Y02E60/366 ,  Y02E70/10

    Abstract: The solar fuels generator includes an ionically conductive separator between a gaseous first phase and a second phase. A photoanode uses one or more components of the first phase to generate cations during operation of the solar fuels generator. A cation conduit is positioned provides a pathway along which the cations travel from the photoanode to the separator. The separator conducts the cations. A second solid cation conduit conducts the cations from the separator to a photocathode.

    Abstract translation: 太阳能燃料发生器包括在气态第一相和第二相之间的离子导电分离器。 光电阳极在太阳能燃料发电机运行期间使用第一相的一个或多个组分产生阳离子。 定位的阳离子导管提供了阳离子沿着该途径从光阳极行进到分离器的途径。 分离器导电阳离子。 第二固体阳离子导管将阳离子从分离器导入光电阴极。

    METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS
    13.
    发明申请
    METHOD OF MAKING PHOTOVOLTAIC DEVICES WITH REDUCED CONDUCTION BAND OFFSET BETWEEN PNICTIDE ABSORBER FILMS AND EMITTER FILMS 审中-公开
    PNICTIDE吸收膜和发射体膜之间具有减少导电带偏移的光伏器件的制造方法

    公开(公告)号：US20160071994A1

    公开(公告)日：2016-03-10

    申请号：US14373599

    申请日：2013-01-30

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Jeffrey P. Bosco ,  Gregory M. Kimball ,  Harry A. Atwater ,  Nathan S. Lewis ,  Rebekah K. Feist ,  Marty W. DeGroot

    IPC: H01L31/072 ,  H01L31/18

    CPC classification number: H01L31/072 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/18 ,  Y02E10/50

    Abstract: The principles of the present invention are used to reduce the conduction band offset between chalcogenide emitter and pnictide absorber films. Alternatively stated, the present invention provides strategies to more closely match the electron affinity characteristics between the absorber and emitter components. The resultant photovoltaic devices have the potential to have higher efficiency and higher open circuit voltage. The resistance of the resultant junctions would be lower with reduced current leakage. In illustrative modes of practice, the present invention incorporates one or more tuning agents into the emitter layer in order to adjust the electron affinity characteristics, thereby reducing the conduction band offset between the emitter and the absorber. In the case of an n-type emitter such as ZnS or a tertiary compound such as zinc sulfide selenide (optionally doped with Al) or the like, an exemplary tuning agent is Mg when the absorber is a p-type pnictide material such as zinc phosphide or an alloy of zinc phosphide incorporating at least one additional metal in addition to Zn and optionally at least one non-metal in addition to phosphorus. Consequently, photovolotaic devices incorporating such films would demonstrate improved electronic performance.

    Abstract translation: 本发明的原理用于降低硫族化物发射体和pnictide吸收膜之间的导带偏移。 或者说，本发明提供了更紧密匹配吸收体和发射体组分之间的电子亲和特性的策略。 所得到的光伏器件具有更高的效率和更高的开路电压的潜力。 所得结的电阻随着电流泄漏减小而降低。 在说明性实践中，本发明将一个或多个调谐剂并入发射极层，以便调节电子亲和特性，从而降低发射极和吸收体之间的导带偏移。 在诸如ZnS的n型发射体或诸如硫化锌硒化物（任选地掺杂有Al）等的叔化合物的情况下，当吸收剂是诸如锌的p型pnictide材料时，示例性调谐剂是Mg 磷化物或除了除了磷以外还含有至少一种另外的金属以及任选的至少一种非金属的磷化锌的合金。 因此，结合这样的薄膜的光电设备将显示出改进的电子性能。

    METHOD OF MAKING PHOTOVOLTAIC DEVICES INCORPORATING IMPROVED PNICTIDE SEMICONDUCTOR FILMS
    16.
    发明申请
    METHOD OF MAKING PHOTOVOLTAIC DEVICES INCORPORATING IMPROVED PNICTIDE SEMICONDUCTOR FILMS 有权
    制造改进的PNICTIDE半导体膜的光伏器件的方法

    公开(公告)号：US20150011042A1

    公开(公告)日：2015-01-08

    申请号：US14373598

    申请日：2013-01-30

    Applicant: DOW GLOBAL TECHNOLOGIESD LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Gregory M. Kimball ,  Harry A. Atwater ,  Nathan S. Lewis ,  Jeffrey P. Bosco ,  Rebekah K. Feist

    IPC: H01L31/18 ,  H01L31/032

    CPC classification number: H01L31/18 ,  H01L31/022466 ,  H01L31/032 ,  H01L31/075 ,  H01L31/20 ,  Y02E10/548

    Abstract: The present invention uses a treatment that involves an etching treatment that forms a pnictogen-rich region on the surface of a pnictide semiconductor film The region is very thin in many modes of practice, often being on the order of only 2 to 3 nm thick in many embodiments. Previous investigators have left the region in place without appreciating the fact of its presence and/or that its presence, if known, can compromise electronic performance of resultant devices. The present invention appreciates that the formation and removal of the region advantageously renders the pnictide film surface highly smooth with reduced electronic defects. The surface is well-prepared for further device fabrication.

    Abstract translation: 本发明使用涉及在pnictide半导体膜的表面上形成富含富含富含亚硝酸盐区域的蚀刻处理的处理。在许多实践模式中，该区域非常薄，通常在2至3nm厚的数量级 许多实施例。 以前的调查人员已经离开了该地区，而不理解其存在的事实和/或其存在（如果知道）可能会损害所得设备的电子性能。 本发明认识到，区域的形成和去除有利地使得pnictide膜表面在电子缺陷减少的情况下非常平滑。 表面准备好进一步的器件制造。

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