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    Single Crystal Piezoelectric RF Resonators and Filters
    12.
    发明申请
    Single Crystal Piezoelectric RF Resonators and Filters 审中-公开

    公开(公告)号：US20180278231A1

    公开(公告)日：2018-09-27

    申请号：US15680296

    申请日：2017-08-18

    Applicant: Dror Hurwitz

    Inventor： Dror Hurwitz

    IPC: H03H9/02 ,  H03H9/17

    CPC classification number: H03H9/02015 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/174 ,  H03H9/587 ,  H03H9/588 ,  H03H9/605 ,  H03H2003/021 ,  H03H2003/023

    Abstract: A filter package comprising an array of piezoelectric films comprising an array of mixed single crystals that each comprise doped Aluminum Nitride, typically AlxGa(1-x)N or ScxAl(1-x)N, that is sandwiched between an array of lower electrodes and an array of upper electrodes comprising metal layers and silicon membranes with cavities thereover: the array of lower electrodes being coupled to an interposer with a first cavity between the array of lower electrodes and the interposer; the array of silicon membranes having a known thickness and attached over the array of upper electrodes with an array of upper cavities, each upper cavity between a silicon membrane of the array and a common silicon cover; each upper cavity aligned with a piezoelectric film, an upper electrode and silicon membrane, the upper cavities having side walls comprising SiO2; the individual piezoelectric films, their upper electrodes and silicon membranes thereover being separated from adjacent piezoelectric films, upper electrodes and silicon membranes by a passivation material.

    Multilayer electronic structure with integral stepped stacked structures
    13.
    发明授权
    Multilayer electronic structure with integral stepped stacked structures 有权
    多层电子结构，具有一体式阶梯式堆叠结构

    公开(公告)号：US09269593B2

    公开(公告)日：2016-02-23

    申请号：US13482099

    申请日：2012-05-29

    Applicant: Dror Hurwitz

    Inventor： Dror Hurwitz

    IPC: H05K1/09 ,  H05K3/46 ,  H05K1/00 ,  H05K1/11 ,  H05K1/02 ,  H01L21/48 ,  H01L23/367 ,  H01L23/498

    CPC classification number: H01L21/4846 ,  H01L23/3677 ,  H01L23/49827 ,  H01L2224/16

    Abstract: A multilayer electronic support structure comprising a plurality of layers extending in an X-Y plane consisting of a dielectric material surrounding metal via posts that conduct in a Z direction perpendicular to the X-Y plane, wherein a stacked via structure crossing at least two via layers of the plurality of layers comprises at least two via posts in neighboring via layers wherein the at least two stacked via posts in neighboring layers have different dimensions in the X-Y plane, such that the stacked via structure tapers.

    Abstract translation: 一种多层电子支撑结构，包括在XY平面中延伸的多个层，所述多个层由围绕金属通孔的介电材料构成，所述介电材料围绕垂直于所述XY平面的Z方向传导，其中堆叠通孔结构与所述多个通孔中的至少两个通孔相交叉 的层包括相邻通孔层中的至少两个通孔，其中相邻层中的至少两个堆叠的通孔在XY平面中具有不同的尺寸，使得堆叠的通孔结构逐渐变细。

    RF resonators and filters
    16.
    发明授权
    RF resonators and filters 有权

    公开(公告)号：US10141912B2

    公开(公告)日：2018-11-27

    申请号：US15468710

    申请日：2017-03-24

    Applicant: Dror Hurwitz

    Inventor： Dror Hurwitz

    IPC: H03H9/205 ,  H03H9/58 ,  H01L23/00

    Abstract: A filter package comprising an array of piezoelectric films sandwiched between an array of upper electrodes and lower electrodes: the individual piezoelectric films and the upper electrodes being separated by a passivation material; the lower electrode being coupled to an interposer with a first cavity between the lower electrodes and the interposer; the filter package further comprising a silicon wafer of known thickness attached over the upper electrodes with an array of upper cavities between the silicon wafer and a silicon cover; each upper cavity aligned with a piezoelectric film in the array of piezoelectric films, the upper cavities having side walls comprising the passivation material.

    Multilayer Electronic Support Structure with Integral Constructional Elements
    18.
    发明申请
    Multilayer Electronic Support Structure with Integral Constructional Elements 有权
    具有整体构造元件的多层电子支撑结构

    公开(公告)号：US20140020945A1

    公开(公告)日：2014-01-23

    申请号：US13555437

    申请日：2012-07-23

    Applicant: Dror Hurwitz ,  Alex Huang

    Inventor： Dror Hurwitz ,  Alex Huang

    IPC: H05K1/11 ,  B05D5/12

    CPC classification number: H05K1/0271 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/562 ,  H01L2924/0002 ,  H05K1/11 ,  H05K2201/09781 ,  H01L2924/00

    Abstract: A multilayer electronic support structure comprising at least one pair of adjacent feature layers extending in an X-Y plane that are separated by a via layer; said via layer comprising a dielectric material that is sandwiched between the two adjacent feature layers and at least one constructional element through the dielectric material spanning between said pair of adjacent feature layers in a Z direction perpendicular to the X-Y plane; wherein said at least one constructional element is characterized by having a long dimension in the X-Y plane that is at least 3 times as long as a short dimension in the X-Y plane and wherein the at least one constructional element is fully encapsulated within the dielectric material and is electrically isolated from its surrounding.

    Abstract translation: 一种多层电子支撑结构，包括在X-Y平面中延伸的至少一对相邻特征层，所述相邻特征层由通孔层分隔开; 所述通孔层包括夹在两个相邻特征层之间的电介质材料和至少一个结构元件，所述至少一个结构元件通过跨过所述一对相邻特征层之间的电介质材料沿垂直于X-Y平面的Z方向; 其中所述至少一个构造元件的特征在于在XY平面中具有至少3倍于XY平面中的短尺寸的长尺寸，并且其中所述至少一个结构元件被完全封装在所述电介质材料内， 与其周围电隔离。

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