公开(公告)号：US20240170610A1

公开(公告)日：2024-05-23

申请号：US18516747

申请日：2023-11-21

Applicant: EPISTAR CORPORATION

Inventor： Heng-Ying CHO ,  Wei-Ting CHANG ,  Yi-Hung LIN

IPC: H01L33/10 ,  H01L27/15 ,  H01L33/22 ,  H01L33/62

CPC classification number: H01L33/10 ,  H01L27/153 ,  H01L33/22 ,  H01L33/62

Abstract: A light-emitting device includes a semiconductor stack, an insulating reflective structure having an opening, and an electrode located on the insulating reflective structure and filled in the opening to electrically connect to the semiconductor stack. The semiconductor stack having includes a main surface, and a side surface inclined to the main surface. The light-emitting device has a dominant wavelength and a peak wavelength. The insulating reflective structure includes: a first part located on the main surface and having a first thickness; and a second part located on the side surface and having a second thickness different from the first thickness. The second part of the insulating reflective structure has a reflectivity of more than 90% for the dominant wavelength or the peak wavelength within an incident angle of 0° to 30°.

公开(公告)号：US20230197904A1

公开(公告)日：2023-06-22

申请号：US18113344

申请日：2023-02-23

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

CPC classification number: H01L33/385 ,  H01L33/10 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/0753 ,  H01L33/36

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20210391504A1

公开(公告)日：2021-12-16

申请号：US17357164

申请日：2021-06-24

Applicant: EPISTAR CORPORATION

Inventor： Yi-Hung LIN ,  Chao-Hsing CHEN ,  Jia-Kuen WANG ,  Tzu-Yao TSENG

IPC: H01L33/40 ,  H01L33/22 ,  H01L33/46 ,  H01L33/42 ,  H01L33/62

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a via penetrating the second semiconductor layer and the active layer to expose a surface of the first semiconductor layer; a first electrode formed in the via and on the second semiconductor layer; a second electrode formed on the second semiconductor layer; and an insulating structure covering the first electrode, the second electrode and the semiconductor structure and including a first opening to expose the first electrode and a second opening to expose the second electrode, wherein the first electrode and the second electrode respectively include a metal layer contacting the insulating layer, the metal layer includes a material including a surface tension value larger than 1500 dyne/cm and a standard reduction potential larger than 0.3 V.

公开(公告)号：US20170256914A1

公开(公告)日：2017-09-07

申请号：US15062995

申请日：2016-03-07

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Yi-Hung LIN ,  Chih-Chiang LU

IPC: H01S5/187 ,  H01S5/343 ,  H01S5/22 ,  H01S5/183 ,  H01S5/042

CPC classification number: H01S5/187 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/0283 ,  H01S5/0286 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18322 ,  H01S5/18344 ,  H01S5/1835 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/343 ,  H01S5/423 ,  H01S2301/18

Abstract: A light-emitting device is provided. The light-emitting device is configured to emit a radiation and comprises: a substrate; an epitaxial structure on the substrate and comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer; and the light-emitting device is devoid of an oxidized layer and an ion implanted layer in the second DBR stack.