公开(公告)号：US20250126936A1

公开(公告)日：2025-04-17

申请号：US18984418

申请日：2024-12-17

Applicant: EPISTAR CORPORATION

Inventor： Jhih-Yong YANG ,  Hsin-Ying WANG ,  De-Shan KUO ,  Chao-Hsing CHEN ,  Yi-Hung LIN ,  Meng-Hsiang HONG ,  Kuo-Ching HUNG ,  Cheng-Lin LU

IPC: H10H20/841 ,  H10H20/814 ,  H10H20/831 ,  H10H20/857 ,  H10H29/14

Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes an upper surface; a plurality of exposed regions, formed in the semiconductor stack and exposing the upper surface; a lower protective layer, covering the exposed regions and the second semiconductor layer; a first reflective structure, formed on the second semiconductor layer and including a plurality of first openings on the second semiconductor layer; a second reflective structure, formed on the first reflective structure and electrically connected to the second semiconductor layer through the plurality of first openings; and an upper protective layer, formed on the second reflective structure; wherein the upper protective layer contacts and overlaps the lower protective layer on the exposed regions; wherein the first reflective structure and the second reflective structure are disposed between the lower protective layer and the upper protective layer.

公开(公告)号：US20240014352A1

公开(公告)日：2024-01-11

申请号：US18370649

申请日：2023-09-20

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/075 ,  H01L33/36

CPC classification number: H01L33/385 ,  H01L33/10 ,  H01L33/0075 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24 ,  H01L25/0753 ,  H01L33/36

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20180358780A1

公开(公告)日：2018-12-13

申请号：US16106458

申请日：2018-08-21

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Yi-Hung LIN ,  Chih-Chiang LU

IPC: H01S5/187 ,  H01S5/343 ,  H01S5/183 ,  H01S5/22 ,  H01S5/042 ,  H01S5/026 ,  H01S5/028 ,  H01S5/022 ,  H01S5/42

CPC classification number: H01S5/0425 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/0283 ,  H01S5/0286 ,  H01S5/0421 ,  H01S5/18308 ,  H01S5/18322 ,  H01S5/18344 ,  H01S5/1835 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/187 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/343 ,  H01S5/423 ,  H01S2301/18

Abstract: A light-emitting device is provided. The light-emitting device comprises: a substrate; and multiple radiation emitting regions arranged on the substrate, and comprising: a first radiation emitting region capable of emitting coherent light and emits a coherent light when driven by a first current; a second radiation emitting region capable of emitting coherent light and emits an incoherent light when driven by the first current, wherein each of the first radiation emitting region and the second emitting region comprises epitaxial structure comprising a first DBR stack, a light-emitting structure, and a second DBR stack.

公开(公告)号：US20180048119A1

公开(公告)日：2018-02-15

申请号：US15794756

申请日：2017-10-26

Applicant: EPISTAR CORPORATION

Inventor： Tzu-Chieh HSU ,  Yi-Wen HUANG ,  Yi-Hung LIN ,  Chih-Chiang LU

IPC: H01S5/187 ,  H01S5/183 ,  H01S5/042 ,  H01S5/343 ,  H01S5/22

CPC classification number: H01S5/187 ,  H01S5/02276 ,  H01S5/026 ,  H01S5/0283 ,  H01S5/0286 ,  H01S5/0421 ,  H01S5/0425 ,  H01S5/18308 ,  H01S5/18322 ,  H01S5/18344 ,  H01S5/1835 ,  H01S5/18391 ,  H01S5/18394 ,  H01S5/2213 ,  H01S5/2214 ,  H01S5/2216 ,  H01S5/343 ,  H01S5/423 ,  H01S2301/18

Abstract: A light-emitting device is provided. The light-emitting device comprises: an epitaxial structure comprising a first DBR stack, a light-emitting stack and a second DBR stack and a contact layer in sequence; an electrode on the epitaxial structure; a current blocking layer between the contact layer and the electrode; a first opening formed in the current blocking layer; and a second opening formed in the electrode and within the first opening; wherein a part of the electrode fills in the first opening and contacts the contact layer.

公开(公告)号：US20210336090A1

公开(公告)日：2021-10-28

申请号：US17237825

申请日：2021-04-22

Applicant: EPISTAR CORPORATION

Inventor： Jhih-Yong YANG ,  Hsin-Ying WANG ,  De-Shan KUO ,  Chao-Hsing CHEN ,  Yi-Hung LIN ,  Meng-Hsiang HONG ,  Kuo-Ching HUNG ,  Cheng-Lin LU

IPC: H01L33/46 ,  H01L27/15 ,  H01L33/10 ,  H01L33/62 ,  H01L33/38

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

公开(公告)号：US20210273137A1

公开(公告)日：2021-09-02

申请号：US17321078

申请日：2021-05-14

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/00 ,  H01L33/32 ,  H01L33/46 ,  H01L33/24

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device;
and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20220384687A1

公开(公告)日：2022-12-01

申请号：US17827622

申请日：2022-05-27

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Yi-Hung LIN ,  Kuo-Ching HUNG ,  Chi-Shiang HSU

IPC: H01L33/38 ,  H01L33/24 ,  H01L33/44

Abstract: A light-emitting device comprises a semiconductor stack comprising a first semiconductor layer and a second semiconductor layer, wherein in a top view, the semiconductor stack comprises an outer peripheral region and an inner region, the outer peripheral region exposes the first semiconductor layer, and the second semiconductor layer is disposed in the inner region; an outer insulated structure comprising an insulation layer and a protective layer, the insulation layer comprising a plurality of first insulation layer outer openings and a second insulation layer opening; a first electrode covering the plurality of first insulation layer outer openings; and a second electrode covering the second insulation layer opening, wherein the outer insulated structure comprises a total thickness gradually decreasing from the outer peripheral region to the inner region.

公开(公告)号：US20200044116A1

公开(公告)日：2020-02-06

申请号：US16529370

申请日：2019-08-01

Applicant: EPISTAR CORPORATION

Inventor： Chao-Hsing CHEN ,  Cheng-Lin LU ,  Chih-Hao CHEN ,  Chi-Shiang HSU ,  I-Lun MA ,  Meng-Hsiang HONG ,  Hsin-Ying WANG ,  Kuo-Ching HUNG ,  Yi-Hung LIN

IPC: H01L33/38 ,  H01L33/10 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46 ,  H01L33/00

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate, and the first semiconductor layer adjacent to the second edge includes a second sidewall separated from the second side surface of the substrate by a distance.

公开(公告)号：US20150222094A1

公开(公告)日：2015-08-06

申请号：US14173650

申请日：2014-02-05

Applicant: Epistar Corporation

Inventor： Shih-Chang LEE ,  Chih-Chiang LU ,  Yi-Hung LIN ,  Wu-Tsung LO ,  Ta-Chuan KUO

IPC: H01S5/42 ,  H01S5/343 ,  H01S5/183 ,  H01S5/042

CPC classification number: H01S5/423 ,  H01S5/02276 ,  H01S5/0425 ,  H01S5/18313 ,  H01S5/18333 ,  H01S5/18338 ,  H01S5/1835

Abstract: A light-emitting array comprises a plurality of light-emitting elements, wherein each of the plurality of light-emitting elements comprises a first semiconductor stack; and a plurality of bridge structures connected to the plurality of light-emitting elements, wherein the plurality of light-emitting elements are spaced apart by the plurality of bridge structures, wherein each of the plurality of bridge structures comprise a second semiconductor stack which has the same epitaxial stack as the first semiconductor stack.

Abstract translation: 发光阵列包括多个发光元件，其中所述多个发光元件中的每一个包括第一半导体叠层; 以及连接到所述多个发光元件的多个桥结构，其中所述多个发光元件被所述多个桥结构间隔开，其中所述多个桥结构中的每一个包括第二半导体堆叠，所述第二半导体堆叠具有 与第一半导体堆叠相同的外延堆叠。

公开(公告)号：US20150034155A1

公开(公告)日：2015-02-05

申请号：US13957958

申请日：2013-08-02

Applicant: EPISTAR CORPORATION

Inventor： Yi-Hung LIN ,  Chien-Ming WU

IPC: H01L31/0216

CPC classification number: H01L31/02168 ,  H01L31/02167 ,  H01L31/0687 ,  Y02E10/544 ,  Y02P70/521

Abstract: An optoelectronic device includes: a semiconductor stack including an upper surface and a side surface; a first electrode formed on the upper surface of the semiconductor stack; a first anti-reflection structure formed on the first electrode and the upper surface; and a second anti-reflection structure different from the first anti-reflection structure formed on the side surface.

Abstract translation: 光电子器件包括：包括上表面和侧表面的半导体堆叠; 形成在所述半导体叠层的上表面上的第一电极; 形成在第一电极和上表面上的第一抗反射结构; 以及与形成在侧面上的第一防反射结构不同的第二防反射结构。