公开(公告)号：US10186570B2

公开(公告)日：2019-01-22

申请号：US14765161

申请日：2014-02-05

Applicant: Entegris, Inc. ,  ATMI Korea Co., Ltd

Inventor： Bryan C. Hendrix ,  Philip S. H. Chen ,  Weimin Li ,  Woosung Jang ,  Dingkai Guo

IPC: H01L29/94 ,  H01L49/02 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02 ,  C01G23/00 ,  C01G25/00 ,  C01G35/00 ,  C23C16/18

Abstract: A high dielectric constant (k≥40), low leakage current (≤10−6 A/cm2 at 0.6 nm or lower equivalent oxide thickness) non-crystalline metal oxide is described, including an oxide of two or more compatible metals selected from the group consisting of bismuth, tantalum, niobium, barium, strontium, calcium, magnesium, titanium, zirconium, hafnium, tin, and lanthanide series metals. Metal oxides of such type may be formed with relative proportions of constituent metals being varied along a thickness of such oxides, to enhance their stability. The metal oxide may be readily made by a disclosed atomic layer deposition process, to provide a metal oxide dielectric material that is usefully employed in DRAM and other microelectronic devices.

公开(公告)号：US09637395B2

公开(公告)日：2017-05-02

申请号：US14431116

申请日：2013-09-26

Applicant: ENTEGRIS, INC.

Inventor： Weimin Li ,  David W. Peters ,  Scott L. Battle ,  William Hunks

IPC: C07F11/00 ,  C01G41/00 ,  C23C16/16 ,  C23C16/18 ,  C23C16/448 ,  C01C3/11 ,  C09D5/24 ,  H01B1/02

CPC classification number: C01G41/006 ,  C01C3/11 ,  C07F11/00 ,  C07F11/005 ,  C09D5/24 ,  C23C16/16 ,  C23C16/18 ,  C23C16/4485 ,  H01B1/02

Abstract: A tungsten precursor useful for forming tungsten-containing material on a substrate, e.g., in the manufacture of microelectronic devices. The tungsten precursor is devoid of fluorine content, and may be utilized in a solid delivery process or other vapor deposition technique, to form films such as elemental tungsten for metallization of integrated circuits, or tungsten nitride films or other tungsten compound films that are useful as base layers for subsequent elemental tungsten metallization.

公开(公告)号：US09443736B2

公开(公告)日：2016-09-13

申请号：US14400793

申请日：2013-05-22

Applicant: ENTEGRIS, INC.

Inventor： Thomas M. Cameron ,  Susan V. DiMeo ,  Bryan C. Hendrix ,  Weimin Li

IPC: H01L21/00 ,  H01L21/28 ,  C07F7/10 ,  C23C16/34 ,  C23C16/40 ,  C09D5/24 ,  C23C16/44 ,  C23C16/455 ,  H01L49/02 ,  H01L29/51

CPC classification number: H01L21/28229 ,  C07F7/10 ,  C09D5/24 ,  C23C16/345 ,  C23C16/401 ,  C23C16/402 ,  C23C16/44 ,  C23C16/45525 ,  H01L28/40 ,  H01L29/516

Abstract: A silicon precursor composition is described, including a silylene compound selected from among: silylene compounds of the formula: wherein each of R and R1 is independently selected from organo substituents; amidinate silylenes; and bis(amidinate) silylenes. The silylene compounds are usefully employed to form high purity, conformal silicon-containing films of SiO2, Si3N4, SiC and doped silicates in the manufacture of microelectronic device products, by vapor deposition processes such as CVD, pulsed CVD, ALD and pulsed plasma processes. In one implementation, such silicon precursors can be utilized in the presence of oxidant, to seal porosity in a substrate comprising porous silicon oxide by depositing silicon oxide in the porosity at low temperature, e.g., temperature in a range of from 50° C. to 200° C.

公开(公告)号：US10043658B2

公开(公告)日：2018-08-07

申请号：US15862205

申请日：2018-01-04

Applicant: Entegris, Inc.

Inventor： William Hunks ,  Chongying Xu ,  Bryan C. Hendrix ,  Jeffrey F. Roeder ,  Steven M. Bilodeau ,  Weimin Li

IPC: H01L21/02 ,  H01L29/06

Abstract: A full fill trench structure is described, including a microelectronic device substrate having a high aspect ratio trench therein and filled with silicon dioxide of a substantially void-free character and substantially uniform density throughout its bulk mass. A method of manufacturing a semiconductor product also is described, involving use of specific silicon precursor compositions for forming substantially void-free and substantially uniform density silicon dioxide material in the trench. The precursor fill composition may include silicon and germanium, to produce a microelectronic device structure including a GeO2/SiO2 trench fill material. A suppressor component may be employed in the precursor fill composition, to eliminate or minimize seam formation in the cured trench fill material.

公开(公告)号：US20180044800A1

公开(公告)日：2018-02-15

申请号：US15550630

申请日：2016-02-13

Applicant: Entegris, Inc.

Inventor： Bryan C. Hendrix ,  David W. Peters ,  Weimin Li ,  Carlo Waldfried ,  Richard A. Cooke ,  Nilesh Gunda ,  I-Kuan Lin

IPC: C23C28/04 ,  C23C16/40 ,  C23C16/455 ,  C23C14/24 ,  C23C14/50

CPC classification number: C23C28/044 ,  C23C14/243 ,  C23C14/50 ,  C23C16/042 ,  C23C16/403 ,  C23C16/404 ,  C23C16/405 ,  C23C16/4404 ,  C23C16/4412 ,  C23C16/45525 ,  C23C16/45555 ,  C23C16/56 ,  C23C28/042

Abstract: Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and/or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

公开(公告)号：US20150318108A1

公开(公告)日：2015-11-05

申请号：US14649334

申请日：2013-09-30

Applicant: ENTEGRIS, INC.

Inventor： Bryan C. Hendrix ,  Weimin Li ,  James Anthony O'Neill

IPC: H01G4/10 ,  C23C16/44 ,  C23C16/455 ,  H01G4/01

Abstract: A high dielectric constant metal-insulator structure, including an electrode comprising NiOx wherein 1

Abstract translation: 一种高介电常数金属 - 绝缘体结构，包括一种包含NiOx的电极，其中1