Abstract:
The high-voltage and/or high-frequency pulse dielectric breakdown strength (DBS) of an implantable medical device is increased by strategically positioning insulation materials on or adjacent to the external surfaces of a filter capacitor. Dielectric breakdown strength is further increased by adding polymeric or ceramic nanoscale metal oxide insulative powders to the insulation materials.
Abstract:
A hermetically sealed feedthrough assembly for an active implantable medical device having an oxide-resistant electrical attachment for connection to an EMI filter, an EMI filter circuit board, an AIMD circuit board, or AIMD electronics. The oxide-resistant electrical attachment, including an oxide-resistant sputter layer 165 is disposed on the device side surface of the hermetic seal ferrule over which an ECA stripe is provided. The ECA stripe may comprise one of a thermal-setting electrically conductive adhesive, an electrically conductive polymer, an electrically conductive epoxy, an electrically conductive silicone, an electrically conductive polyimide, or a thermal-setting electrically conductive polyimide, such as those manufactured by Ablestick Corporation. The oxide-free electrical attachment between the ECA stripe and the filter or AIMD circuits may comprise one of gold, platinum, palladium, silver, iridium, rhenium, rhodium, tantalum, tungsten, niobium, zirconium, vanadium, and combinations or alloys thereof.
Abstract:
A hermetically sealed feedthrough assembly for an active implantable medical device having an oxide-resistant electrical attachment for connection to an ENI filter, an EMI filter circuit board, an AIMD circuit board, or AIMD electronics. The oxide-resistant electrical attachment, including an oxide-resistant coating layer that is disposed on the device side surface of the hermetic seal ferrule over which an optional ECA stripe may be provided. The optional ECA stripe may comprise one of a thermal-setting electrically conductive adhesive, an electrically conductive polymer, an electrically conductive epoxy, an electrically conductive silicone, an electrically conductive polyamide, or an electrically conductive polyimide, such as those manufactured by Ablestick Corporation. The oxide-free coating layer may comprise one of gold, platinum, palladium, silver, iridium, rhenium, rhodium, tantalum, tungsten, niobium, zirconium, vanadium, and combinations or alloys thereof. As used herein, the oxide-free coating layer is not limiting and as will be taught, in addition to sputtering, there are many other methods of applying a proud oxide-free surface on either an AIMD ferrule or am AIMD housing.
Abstract:
A method for manufacturing a feedthrough dielectric body for an active implantable medical device includes the steps of first forming a ceramic reinforced metal composite (CRMC) paste by mixing platinum with a ceramic material to form a CRMC material, subjecting the CRMC material to a first sintering step to thereby form a sintered CRMC material, ball-milling or grinding the sintered CRMC material to form a powdered CRMC material; and then mixing the powdered CRMC material with a solvent to form the CRMC paste. The method further includes forming an alumina ceramic body in a green state, forming at least one via hole through the alumina ceramic body, filling the via hole with the CRMC paste, drying the ceramic body including the CRMC paste to form a first CRMC material filling the via hole, forming a second via hole through the first CRMC material, providing a metal core in the second via hole, and subjecting the ceramic body including the first CRMC material and the metal core to a second sintering step to thereby form the dielectric body. The dielectric body is then sealed in a ferrule opening to form a feedthrough.
Abstract:
A method of manufacturing a feedthrough dielectric body for an active implantable medical device includes the steps of: a) forming an alumina ceramic body in a green state, or, stacking upon one another discrete layers of alumina ceramic in a green state and pressing; b) forming at least one via hole straight through the alumina ceramic body; c) filling the at least one via hole with a ceramic reinforced metal composite paste; d) drying the alumina ceramic body and the ceramic reinforced metal composite paste; e) forming a second hole straight through the ceramic reinforced metal composite paste being smaller in diameter in comparison to the at least one via hole; f) filling the second hole with a substantially pure metal paste; g) sintering the alumina ceramic body, the ceramic reinforced metal composite paste and the metal paste; and h) hermetically sealing the feedthrough dielectric body to a ferrule.
Abstract:
A method of manufacturing a feedthrough dielectric body for an active implantable medical device includes the steps of: a) forming an alumina ceramic body in a green state, or, stacking upon one another discrete layers of alumina ceramic in a green state and pressing; b) forming at least one via hole straight through the alumina ceramic body; c) filling the at least one via hole with a ceramic reinforced metal composite paste; d) drying the alumina ceramic body and the ceramic reinforced metal composite paste; e) forming a second hole straight through the ceramic reinforced metal composite paste being smaller in diameter in comparison to the at least one via hole; f) filling the second hole with a substantially pure metal paste; g) sintering the alumina ceramic body, the ceramic reinforced metal composite paste and the metal paste; and h) hermetically sealing the feedthrough dielectric body to a ferrule.
Abstract:
A co-fired hermetically sealed feedthrough is attachable to an active implantable medical device. The feedthrough comprises an alumina dielectric substrate comprising at least 96 or 99% alumina. A via hole is disposed through the alumina dielectric substrate from a body fluid side to a device side. A substantially closed pore, fritless and substantially pure platinum fill is disposed within the via hole forming a platinum filled via electrically conductive between the body fluid side and the device side. A hermetic seal is between the platinum fill and the alumina dielectric substrate, wherein the hermetic seal comprises a tortuous and mutually conformal interface between the alumina dielectric substrate and the platinum fill.
Abstract:
A hermetically sealed filtered feedthrough assembly for an AIMD includes an electrically conductive ferrule with an electrically conductive extension at least partially extending into the ferrule opening. An electrically non-conductive insulator hermetically seals the ferrule opening. An electrically conductive pathway is hermetically sealed and disposed through the insulator between a body fluid and device side. A filter capacitor is located on the device side. A first low impedance electrical coupling is between a first metallization of the filter capacitor and the pathway. A ground conductor is disposed through the filter capacitor in non-conductive relation with the at least one active and ground electrode plates, where the ground conductor is electrically coupled to the extension of the ferrule. An oxide-resistant metal addition is disposed on the device side and electrically couples the ground conductor to the second metallization of the filter capacitor.
Abstract:
A co-connected hermetic feedthrough, feedthrough capacitor, and leadwire assembly includes a dielectric substrate with a via hole disposed through the dielectric substrate from a body fluid side to a device side. A conductive fill is disposed within the via forming a hermetic seal and is electrically conductive between the body fluid side and the device side. A feedthrough capacitor is attached to the dielectric substrate and includes a capacitor dielectric substrate, an unfilled capacitor via hole including an inner metallization, a set of capacitor active electrode plates electrically coupled to the inner metallization, an outer metallization disposed and a set of capacitor ground electrode plates electrically coupled to the outer metallization. A conductive leadwire is disposed within the unfilled capacitor via hole. An electrical joint connects the conductive fill, the capacitor inner metallization along with the capacitor active electrode plates and the conductive leadwire.
Abstract:
An RF filter for an active medical device (AMD), for handling RF power induced in an associated lead from an external RF field at a selected MRI frequency or range frequencies includes a capacitor having a capacitance of between 100 and 10,000 picofarads, and a temperature stable dielectric having a dielectric constant of 200 or less and a temperature coefficient of capacitance (TCC) within the range of plus 400 to minus 7112 parts per million per degree centigrade. The capacitor's dielectric loss tangent in ohms is less than five percent of the capacitor's equivalent series resistance (ESR) at the selected MRI RF frequency or range of frequencies.