公开(公告)号：US20160322405A1

公开(公告)日：2016-11-03

申请号：US15207569

申请日：2016-07-12

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa NAGANO ,  Noburo HOSOKAWA ,  Tomofumi SUZUKI ,  Takashi BABA

IPC: H01L27/144 ,  H01L49/02 ,  H01L31/0232 ,  H01L31/107 ,  H01L31/02

CPC classification number: H01L27/1446 ,  H01L27/1443 ,  H01L27/14605 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/02322 ,  H01L31/107 ,  H01L2224/11

Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

公开(公告)号：US20150137298A1

公开(公告)日：2015-05-21

申请号：US14605120

申请日：2015-01-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa NAGANO ,  Noburo HOSOKAWA ,  Tomofumi SUZUKI ,  Takashi BABA

IPC: H01L27/144 ,  H01L31/0232 ,  H01L31/107

CPC classification number: H01L27/1446 ,  H01L27/1443 ,  H01L27/14605 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/02322 ,  H01L31/107 ,  H01L2224/11

Abstract: A semiconductor light detection element has a plurality of channels, each of which consists of a photodiode array including a plurality of avalanche photodiodes operating in Geiger mode, quenching resistors connected in series to the respective avalanche photodiodes, and signal lines to which the quenching resistors are connected in parallel. A mounting substrate is configured so that a plurality of electrodes corresponding to the respective channels are arranged on a third principal surface side and so that a signal processing unit for processing output signals from the respective channels is arranged on a fourth principal surface side. In a semiconductor substrate, through-hole electrodes electrically connected to the signal lines are formed for the respective channels. The through-hole electrodes and the electrodes are electrically connected through bump electrodes.

Abstract translation: 半导体光检测元件具有多个通道，每个通道由包括以盖革模式操作的多个雪崩光电二极管的光电二极管阵列组成，与各雪崩光电二极管串联连接的淬火电阻器，以及淬灭电阻器 并联连接 安装基板被配置为使得与第三主面对应的多个电极布置在第三主表面上，并且使得用于处理来自各个通道的输出信号的信号处理单元被布置在第四主表面侧。 在半导体基板中，形成与各信道电连接的信号线的通孔电极。 通孔电极和电极通过凸块电极电连接。

公开(公告)号：US20210134862A1

公开(公告)日：2021-05-06

申请号：US16316652

申请日：2017-07-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Terumasa NAGANO ,  Takashi BABA

IPC: H01L27/146 ,  H01L31/107

Abstract: A photodetecting device includes a semiconductor substrate, a plurality of avalanche photodiodes each having a light receiving region, the avalanche photodiodes being arranged in a matrix at the semiconductor substrate, and a plurality of through-electrodes electrically connected to corresponding light receiving regions. The plurality of through-electrodes are arranged for each area surrounded by four mutually adjacent avalanche photodiodes of the plurality of avalanche photodiodes. Each of the light receiving regions has, when viewed from a direction perpendicular to a first principal surface of the semiconductor substrate, a polygonal shape including a pair of first sides opposing each other in a row direction and extending in a column direction and four second side opposing four through-electrodes surrounding the light receiving region and extending in directions intersecting with the row direction and the column direction. The length of the first side is shorter than the length of the second side.

公开(公告)号：US20200370954A1

公开(公告)日：2020-11-26

申请号：US16963312

申请日：2019-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takuya FUJITA ,  Yusei TAMURA ,  Kenji MAKINO ,  Takashi BABA ,  Koei YAMAMOTO

IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

公开(公告)号：US20200058821A1

公开(公告)日：2020-02-20

申请号：US16346929

申请日：2017-11-09

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takashi BABA ,  Shunsuke ADACHI ,  Shigeyuki NAKAMURA ,  Terumasa NAGANO ,  Koei YAMAMOTO

IPC: H01L31/107 ,  H01L31/02 ,  H01L27/144

Abstract: A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

公开(公告)号：US20180069145A1

公开(公告)日：2018-03-08

申请号：US15561992

申请日：2016-03-31

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Atsushi ISHIDA ,  Noburo HOSOKAWA ,  Terumasa NAGANO ,  Takashi BABA

IPC: H01L31/107 ,  H01L21/3205 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L27/14687 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/522 ,  H01L23/532 ,  H01L24/00 ,  H01L24/02 ,  H01L24/13 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14643 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02161 ,  H01L31/103 ,  H01L31/107 ,  H01L2224/0233 ,  H01L2224/0235 ,  H01L2224/0236 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02381 ,  H01L2224/10126 ,  H01L2224/11 ,  H01L2224/12105 ,  H01L2224/13009 ,  H01L2224/13021 ,  H01L2224/13024 ,  H01L2224/13025 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/351

Abstract: In a plane including the center line of a vertical through hole, it is assumed that a segment that connects a first point corresponding to the edge of an opening of an insulating layer and a second point corresponding to the edge of a second opening is a first segment, a segment that connects the second point and a third point corresponding to an intersection point between the second opening and a surface of the insulating layer is a second segment, and a segment that connects the third point and the first point is a third segment. In the insulating layer, the first area located on one side with respect to the first segment is larger than the sum of the second area surrounded by the first, the second and the third segments and the third area located on the other side with respect to the third segment.

公开(公告)号：US20160329455A1

公开(公告)日：2016-11-10

申请号：US15213629

申请日：2016-07-19

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Terumasa NAGANO ,  Noburo HOSOKAWA ,  Tomofumi SUZUKI ,  Takashi BABA

IPC: H01L31/107 ,  H01L49/02 ,  H01L27/146

CPC classification number: H01L31/107 ,  G01J1/42 ,  G01T1/208 ,  H01L27/144 ,  H01L27/1443 ,  H01L27/14636 ,  H01L27/14643 ,  H01L27/14658 ,  H01L27/14663 ,  H01L28/20 ,  H01L31/02005 ,  H01L31/022408

Abstract: A semiconductor light detection element includes a plurality of avalanche photodiodes operating in Geiger mode and formed in a semiconductor substrate, quenching resistors connected in series to the respective avalanche photodiodes and arranged on a first principal surface side of the semiconductor substrate, and a plurality of through-hole electrodes electrically connected to the quenching resistors and formed so as to penetrate the semiconductor substrate from the first principal surface side to a second principal surface side. A mounting substrate includes a plurality of electrodes arranged corresponding to the respective through-hole electrodes on a third principal surface side. The through-hole electrodes and the electrodes are electrically connected through hump electrodes, and a side surface of the semiconductor substrate and a side surface of a glass substrate are flush with each other.

Abstract translation: 半导体光检测元件包括以Geiger模式操作并形成在半导体衬底中的多个雪崩光电二极管，与各个雪崩光电二极管串联连接并设置在半导体衬底的第一主表面侧上的骤冷电阻器，以及多个通孔 电极连接到淬火电阻器并形成为从第一主表面侧穿过半导体衬底到第二主表面侧的电极。 安装基板包括在第三主表面侧对应于相应的通孔电极布置的多个电极。 通孔电极和电极通过隆起电极电连接，半导体衬底的侧表面和玻璃衬底的侧表面彼此齐平。