公开(公告)号：US20210372852A1

公开(公告)日：2021-12-02

申请号：US16963303

申请日：2019-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takashi BABA ,  Tatsuya HASHI ,  Yoshihito SUZUKI ,  Kenji MAKINO ,  Shigeyuki NAKAMURA

IPC: G01J1/44 ,  G01S7/4865 ,  G01S7/4863

Abstract: A photodetector device includes an avalanche photodiode array substrate. A circuit substrate includes time measurement circuits and a clock driver. Each of the time measurement circuit includes a delay line unit, and is arranged to acquire, from an operation result of a delay line, time information indicating timing at which a pulse signal is input from a corresponding avalanche photodiode. The delay line unit is arranged to initiate an operation of the delay line in response to input of the pulse signal to the time measurement circuit, and to stop the operation of the delay line in response to input of a clock signal from a clock driver to the time measurement circuit, and is arranged to detect a time interval shorter than a cycle of the clock signal by the operation of the delay line.

公开(公告)号：US20210255341A1

公开(公告)日：2021-08-19

申请号：US17252595

申请日：2019-02-21

Applicant: Kyoto University ,  HAMAMATSU PHOTONICS K.K.

Inventor： Keiji ABE ,  Toshiyuki IZAWA ,  Kenji MAKINO ,  Seiichiro MIZUNO ,  Takumi IKENOUE ,  Yuki HARUTA ,  Masao MIYAKE ,  Tetsuji HIRATO

IPC: G01T1/24 ,  G01N23/04 ,  G01N23/083 ,  H01G9/00 ,  H01G9/20 ,  H01L27/30 ,  H01L51/00 ,  H01L51/42 ,  H01L51/44

Abstract: A radiation detector includes a substrate including a first electrode portion, a radiation absorption layer disposed on one side with respect to the substrate and configured of a plurality of perovskite crystals, and a second electrode portion disposed on the one side with respect to the radiation absorption layer and being opposite to the first electrode portion with the radiation absorption layer interposed therebetween. Each of the plurality of perovskite crystals is formed to extend with a first direction in which the first electrode portion and the second electrode portion are opposite to each other as a longitudinal direction in a region between the first electrode portion and the second electrode portion in the radiation absorption layer.

公开(公告)号：US20200370954A1

公开(公告)日：2020-11-26

申请号：US16963312

申请日：2019-01-24

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takuya FUJITA ,  Yusei TAMURA ,  Kenji MAKINO ,  Takashi BABA ,  Koei YAMAMOTO

IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

公开(公告)号：US20230420595A1

公开(公告)日：2023-12-28

申请号：US18039502

申请日：2021-11-15

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Keiki TAGUCHI ,  Hajime ISHIHARA ,  Yoshiaki OHSHIGE ,  Kenji MAKINO

IPC: H01L31/102 ,  H01L31/0224 ,  H01L31/0304

CPC classification number: H01L31/102 ,  H01L31/022408 ,  H01L31/03042

Abstract: A semiconductor light receiving element includes: a substrate; a semiconductor stacked portion that is formed on a first region of the substrate; and a first electrode and a second electrode that are electrically connected to the semiconductor stacked portion. Te semiconductor stacked portion includes: a light absorption layer of a first conductivity type including InxGa1-xAs; and a second region of a second conductivity type other than the first conductivity type that is located on the opposite side to the substrate with respect to the light absorption layer and bonded to the light absorption layer. The first electrode is connected to a first portion of the first conductivity type located on the substrate side with respect to the light absorption layer in the semiconductor stacked portion.

公开(公告)号：US20210356319A1

公开(公告)日：2021-11-18

申请号：US17384915

申请日：2021-07-26

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Takuya FUJITA ,  Yusei TAMURA ,  Kenji MAKINO ,  Takashi BABA ,  Koei YAMAMOTO

IPC: G01J1/44 ,  H01L27/144 ,  H01L31/02 ,  H01L31/107

Abstract: A photodetector device includes an avalanche photodiode array substrate formed from compound semiconductor. A plurality of avalanche photodiodes arranged to operate in a Geiger mode are two-dimensionally arranged on the avalanche photodiode array substrate. A circuit substrate includes a plurality of output units which are connected to each other in parallel to form at least one channel. Each of the output units includes a passive quenching element and a capacitative element. The passive quenching element is connected in series to at least one of the plurality of avalanche photodiodes. The capacitative element is connected in series to at least one of the avalanche photodiodes and is connected in parallel to the passive quenching element.

公开(公告)号：US20170292826A1

公开(公告)日：2017-10-12

申请号：US15516699

申请日：2015-10-08

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kenji MAKINO ,  Masato INAGAKI ,  Kei TABATA

IPC: G01B9/02 ,  G01J1/04

CPC classification number: G01B9/02091 ,  G01B9/02041 ,  G01B9/02061 ,  G01J1/0411

Abstract: A light detecting module that detects interference light that has exited an exit end surface of an optical fiber in an OCT instrument includes: a ball lens including an incident surface entered by the interference light that has exited the exit end surface, and an exit surface exited by the interference light that has entered the incident surface; and a photodiode including a detecting surface entered by the interference light that has exited the exit surface. The interference light obliquely enters the incident surface with respect to a perpendicular line at an incident position of the interference light. The interference light obliquely exits the exit surface with respect to a perpendicular line at an exit position of the interference light. The interference light obliquely enters the detecting surface with respect to a perpendicular line at an incident position of the interference light.

公开(公告)号：US20200271514A1

公开(公告)日：2020-08-27

申请号：US16647496

申请日：2018-09-05

Applicant: HAMAMATSU PHOTONICS K.K.

Inventor： Kenji MAKINO

IPC: G01J1/46 ,  H01L31/024 ,  H01L31/105 ,  G01J1/16 ,  H01L31/109

Abstract: An optical detection circuit includes: a first optical detection element having a first anode and a first cathode, the first optical detection element being configured to generate voltage between the first anode and the first cathode due to photoelectromotive force generated in accordance with incident-light quantity; and a first operational amplifier having a first non-inverting input terminal, a first inverting input terminal, and a first output terminal, in which the first non-inverting input terminal is connected to fixed potential, one of the first anode and the first cathode is connected to the first inverting input terminal, and the other of the first anode and the first cathode is connected to the first output terminal.