Abstract:
Patterned, longitudinally and transversely antiferromagnetically exchange biased GMR sensors are provided which have narrow effective trackwidths and reduced side reading. The exchange biasing significantly reduces signals produced by the portion of the ferromagnetic free layer that is underneath the conducting leads while still providing a strong pinning field to maintain sensor stability. In the case of the transversely biased sensor, the magnetization of the free and biasing layers in the same direction as the pinned layer simplifies the fabrication process and permits the formation of thinner leads by eliminating the necessity for current shunting.
Abstract:
A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al2O3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data confirming the effectiveness of this structure is provided, together with a method for manufacturing it and, additionally, its longitudinal bias leads.
Abstract:
A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al2O3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data confirming the effectiveness of this structure is provided, together with a method for manufacturing it and, additionally, its longitudinal bias leads.
Abstract translation:公开了一种高性能镜面自由层底部自旋阀。 该结构由NiCr / MnPt / CoFe / Ru / CoFe / Cu /自由层/ Cu / Ta或TaO / Al 2 O 3构成。 一个关键的特征是自由层由非常薄的CoFe / NiFe复合层制成。 提供了确认该结构的有效性的实验数据,以及其制造方法以及另外其纵向偏置引线。
Abstract:
A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
Abstract:
Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided together with methods for their fabrication. In each embodiment the sensor includes an in-situ naturally oxidized specularly reflecting layer (NOL) which is a more uniform and dense layer than such layers formed by high temperature annealing or reactive-ion etching. In one embodiment, the sensor has an ultra thin composite free layer and a high-conductance layer (HCL), providing high output and low coercivity. In a second embodiment, along with the same NOL, the sensor has a laminated free layer which includes a non-magnetic conductive layer, which also provides high output and low coercivity. The sensors are capable of reading densities exceeding 60 Gb/in2.
Abstract translation:底部自旋阀(BSV)旋转过滤器自旋阀(SFSV)型的GMR传感器的两个实施例与其制造方法一起提供。 在每个实施例中,传感器包括原位自然氧化的镜面反射层(NOL),其比通过高温退火或反应离子蚀刻形成的这种层更均匀和致密的层。 在一个实施例中,传感器具有超薄的复合自由层和高电导层(HCL),提供高输出和低矫顽力。 在第二实施例中,与相同的NOL一起,传感器具有包括非磁性导电层的层叠自由层,其也提供高输出和低矫顽力。 传感器能够读取超过60Gb / in <2>的密度。
Abstract:
A method for forming top and bottom spin valve sensors and the sensors so formed, the sensors having a strongly coupled SyAP pinned layer and an ultra-thin antiferromagnetic pinning layer. The two strongly coupled ferromagnetic layers comprising the SyAP pinned layer in the top valve configuration are separated by a Ru spacer layer approximately 3 angstroms thick, while the two layers in the bottom spin valve configuration are separated by a Rh spacer layer approximately 5 angstroms thick. This allows the use of an ultra thin MnPt antiferromagnetic pinning layer of thickness between approximately 80 and approximately 150 angstroms. The sensor structure produced thereby is suitable for high density applications.
Abstract:
As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of said decoupling layer allows more latitude in etch depth control during manufacturing.
Abstract:
As the dimensions of spin valve heads continue to be reduced, a number of difficulties are being encountered. One such is with the longitudinal bias when an external magnetic field can cause reversal of the hard magnet, thereby causing a hysteric response by the head. This coercivity reduction becomes more severe as the hard magnet becomes thinner. This problem has been overcome by inserting a decoupling layer between the antiferromagnetic layer that is used to stabilize the pinned layer of the spin valve itself and the soft ferromagnetic layer that is used for longitudinal biasing. This soft ferromagnetic layer is pinned by a second antiferromagnetic layer deposited on it on its far side away from the first antiferromagnetic layer. The presence of the decoupling layer ensures that the magnetization of the soft layer is determined only by the second antiferromagnetic layer. The inclusion of said decoupling layer allows more latitude in etch depth control during manufacturing.
Abstract:
This invention describes a spin valve based magnetic read head that is suitable for use with ultra-high recording densities along with a process for manufacturing it. This process produces a product that is free of conductor lead bridging and conductor lead fencing. A key sub-process of the present invention is the deposition of a first capping layer through DC sputtering followed by, without breaking vacuum, a lead overlay layer This is followed by deposition, also by DC sputtering, of a second capping layer which is patterned so that it becomes a hard mask. Then, using this hard mask, the lead overlay layer is removed from the center of the structure by means of ion beam etching. Hard bias and conductor lead layers are then formed inside parallel trenches without the use of liftoff processes.