公开(公告)号：US20030096057A1

公开(公告)日：2003-05-22

申请号：US10292350

申请日：2002-11-12

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Cheng T. Horng ,  Mao-Min Chen ,  Min Li ,  Ru-Ying Tong

IPC: B05D005/12

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/324 ,  H01F10/3272 ,  H01F10/3295 ,  H01F41/302 ,  H01F41/325 ,  Y10T29/49034 ,  Y10T29/49044

Abstract: A high performance specular free layer bottom spin valve is disclosed. This structure made up the following layers: NiCr/MnPt/CoFe/Ru/CoFe/Cu/free layer/Cu/Ta or TaO/Al2O3. A key feature is that the free layer is made of a very thin CoFe/NiFe composite layer. Experimental data confirming the effectiveness of this structure is provided, together with a method for manufacturing it and, additionally, its longitudinal bias leads.

公开(公告)号：US20010040782A1

公开(公告)日：2001-11-15

申请号：US09773743

申请日：2001-02-02

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Kochan Ju ,  Mao-Min Chen ,  Cheng T. Horng ,  Jei-Wei Chang

IPC: H01L021/00 ,  G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3932 ,  G11B5/3948 ,  G11B2005/3996

Abstract: A method for forming a longitudinally magnetically biased dual stripe magnetoresistive (DSMR) sensor element comprises forming a first patterned magnetoresistive (MR) layer. Contact the opposite ends of the patterned magnetoresistive (MR) layer with a first pair of stacks defining a track width of the first magnetoresistive (MR) layer, each of the stacks including a first Anti-Ferro-Magnetic (AFM) layer and a first lead layer. Then anneal the device in the presence of a longitudinal external magnetic field. Next, form a second patterned magnetoresistive (MR) layer above the previous structure. Contact the opposite ends of the second patterned magnetoresistive (MR) layer with a second pair of stacks defining a second track width of the second patterned magnetoresistive (MR) layer. Each of the second pair of stacks includes spacer layer composed of a metal, a Ferro-Magnetic (FM) layer, a second Anti-Ferro-Magnetic (AFM) layer and a second lead layer. Then anneal the device in the presence of a second longitudinal external magnetic field.

公开(公告)号：US20030197983A1

公开(公告)日：2003-10-23

申请号：US10124004

申请日：2002-04-17

Applicant: Headway Technologies, Inc.

Inventor： Cheng T. Horng ,  Mao-Min Chen ,  Chen-Jung Chien ,  Cherng-Chyi Han ,  Ru-Ying Tong ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang

IPC: G11B005/39 ,  C21D001/04

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49048 ,  Y10T29/49052

Abstract: A method for fabricating a longitudinally hard biased, bottom spin valve GMR sensor with a lead overlay (LOL) conducting lead configuration and a narrow effective trackwidth. The advantageous properties of the sensor are obtained by providing two novel barrier layers, one of which prevents oxidation of and Au diffusion into the free layer during annealing and etching and the other of which prevents oxidation of the capping layer during annealing so as to allow good electrical contact between the lead and the sensor stack.

Abstract translation: 一种用于制造具有引线覆盖（LOL）导线配置和窄有效轨道宽度的纵向硬偏置底部自旋阀GMR传感器的方法。 传感器的有利性质是通过提供两个新的阻挡层获得的，其中之一是防止在退火和蚀刻期间氧化和Au扩散到自由层中，另一个阻止退火期间封盖层的氧化，从而使得良好 引线和传感器堆叠之间的电接触。

公开(公告)号：US20030133232A1

公开(公告)日：2003-07-17

申请号：US10050644

申请日：2002-01-16

Applicant: Headway Technologies, Inc.

Inventor： Min Li ,  Simon H. Liao ,  Masashi Sano ,  Kiyoshi Noguchi ,  Kochan Ju ,  Cheng T. Horng

IPC: G11B005/39 ,  C21D001/04

CPC classification number: C22C38/10 ,  B32B15/01 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C22C38/12 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A method for forming an NiCr seed layer based bottom spin valve sensor element having a synthetic antiferromagnet pinned (SyAP) layer and a capping layer comprising either a single specularly reflecting nano-oxide layer (NOL) or a bi-layer comprising a non-metallic layer and a specularly reflecting nano-oxide layer and the sensor element so formed. The method of producing these sensor elements provides elements having higher GMR ratios and lower resistances than elements of the prior art.

Abstract translation: 一种用于形成具有合成反铁磁性钉扎（SyAP）层的NiCr种子层底部自旋阀传感器元件的方法和包括单个镜面反射纳米氧化物层（NOL）或包含非金属的双层的双层的覆盖层 层和镜面反射纳米氧化物层和如此形成的传感器元件。 制造这些传感器元件的方法提供了具有比现有技术的元件更高的GMR比和较低电阻的元件。

公开(公告)号：US20020154458A1

公开(公告)日：2002-10-24

申请号：US09953542

申请日：2001-09-17

Applicant: Headway Technologies, Inc.

Inventor： Charles C. Lin ,  Cheng T. Horng ,  Min Li ,  Kochan Ju

IPC: G11B005/39 ,  B44C001/22

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

Abstract: A method for forming a top spin-valve SyAP GMR read sensor having a novel conductive lead overlay configuration and the sensor so formed. The lead overlay electrically contacts the sensor at a position within the SyAP pinned layer, thus simultaneously assuring improved electrical contact and destroying the GMR properties of the sensor at the junction to improve the definition of the sensor track width.

Abstract translation: 一种用于形成具有新型导电引线覆盖结构的顶部自旋阀SyAP GMR读取传感器的方法和如此形成的传感器。 引线覆盖层在SyAP钉扎层内的位置处电传感器接触传感器，从而同时确保改善的电接触并破坏传感器在接合处的GMR性能，以改善传感器轨道宽度的定义。

公开(公告)号：US20040252418A1

公开(公告)日：2004-12-16

申请号：US10460086

申请日：2003-06-12

Applicant: Headway Technologies, Inc.

Inventor： Cheng T. Horng ,  Ru-Ying Tong

IPC: G11B005/39

CPC classification number: G11B5/3906 ,  G11B7/0053 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49052

Abstract: Two embodiments of a GMR sensor of the bottom spin valve (BSV) spin filter spin valve (SFSV) type are provided, together with methods for their fabrication. In one embodiment, the sensor has an ultra thin (

Abstract translation: 提供底部自旋阀（BSV）旋转过滤器自旋阀（SFSV）型的GMR传感器的两个实施例及其制造方法。 在一个实施例中，传感器具有超薄（<20埃）单自由层和复合高电导层（HCL），提供高输出，低矫顽力和正磁致伸缩。 在第二实施例中，传感器具有复合自由层和单个HCL，其也具有高输出，低矫顽力和正磁致伸缩。 传感器能够读取超过60Gb / in <2>的密度。

公开(公告)号：US20040060166A1

公开(公告)日：2004-04-01

申请号：US10674572

申请日：2003-09-30

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Cheng T. Horng ,  Ru-Ying Tong ,  Kochan Ju

IPC: G11B005/127 ,  H04R031/00

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: This invention describes a spin valve based magnetic read head that is suitable for use with ultra-high recording densities along with a process for manufacturing it. This process produces a product that is free of conductor lead bridging and conductor lead fencing. A key sub-process of the present invention is the deposition of a first capping layer through DC sputtering followed by, without breaking vacuum, a lead overlay layer This is followed by deposition, also by DC sputtering, of a second capping layer which is patterned so that it becomes a hard mask. Then, using this hard mask, the lead overlay layer is removed from the center of the structure by means of ion beam etching. Hard bias and conductor lead layers are then formed inside parallel trenches with the use of liftoff processes.

Abstract translation: 本发明描述了一种适用于超高记录密度的基于自旋阀的磁读头及其制造方法。 该工艺生产的产品不含导体引线桥接和导线栅栏。 本发明的关键子方法是通过DC溅射沉积第一覆盖层，然后在不破坏真空的情况下沉积引线覆盖层。然后也通过DC溅射沉积图案化的第二覆盖层 使它成为一个硬面具。 然后，使用该硬掩模，通过离子束蚀刻从引线覆盖层的中心除去引线覆盖层。 然后使用脱模工艺在平行的沟槽内形成硬偏压和导体引线层。

公开(公告)号：US20040047081A1

公开(公告)日：2004-03-11

申请号：US10649456

申请日：2003-08-27

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Cheng T. Horng ,  Mao-Min Chen ,  Chen-Jung Chien ,  Cherng-Chyi Han ,  Chyu-Jiuh Torng ,  Ru-Ying Tong

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  G11B5/4853 ,  G11B5/486 ,  H01F10/324 ,  H01F10/3268

Abstract: A method for forming a thin conductive lead layer of high sheet conductivity, high hardness, high melting point, high corrosion resistance and lacking the propensity for smearing, oozing, electromigration and nodule formation. Said lead layer is formed upon the hard magnetic longitudinal bias layer of an abutted junction spin-valve type magnetoresistive read head and said read head is therefore suitable for reading high density recorded disks at high RPM.

Abstract translation: 一种形成具有高导电性，高硬度，高熔点，高耐蚀性和缺乏涂抹，渗出，电迁移和结节形成倾向的薄导电铅层的方法。 所述引线层形成在接触自旋阀型磁阻读取头的硬磁纵向偏置层上，因此所述读头适用于以高RPM读取高密度记录盘。

公开(公告)号：US20040160709A1

公开(公告)日：2004-08-19

申请号：US10782671

申请日：2004-02-19

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Charles C. Lin ,  Cheng T. Horng ,  Min Li ,  Kochan Ju

IPC: G11B005/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

Abstract: A method for forming a top spin-valve SyAP GMR read sensor having a novel conductive lead overlay configuration and the sensor so formed. The lead overlay electrically contacts the sensor at a position within the SyAP pinned layer, thus simultaneously assuring improved electrical contact and destroying the GMR properties of the sensor at the junction to improve the definition of the sensor track width.

公开(公告)号：US20030192168A1

公开(公告)日：2003-10-16

申请号：US10437090

申请日：2003-05-13

Applicant: HEADWAY TECHNOLOGIES, INC.

Inventor： Min Li ,  Simon H. Liao ,  Masashi Sano ,  Kiyoshi Noguchi ,  Kochan Ju ,  Cheng T. Horng

IPC: G11B005/127

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  Y10T29/49034 ,  Y10T29/49044 ,  Y10T29/49046

Abstract: A method for forming a bottom spin valve sensor having a synthetic antiferromagnetic pinned (SyAP) layer, antiferromagnetically coupled to a pinning layer, in which one of the layers of the SyAP is formed as a three layer lamination that contains a specularly reflecting oxide layer of FeTaO. The sensor formed according to this method has an extremely high GMR ratio and exhibits good pinning strength.

Abstract translation: 一种用于形成底部自旋阀传感器的方法，该底部自旋阀传感器具有反结合磁耦合到钉扎层的合成反铁磁钉扎（SyAP）层，其中SyAP的一个层形成为三层层压，其包含镜面反射氧化物层 FeTaO。 根据该方法形成的传感器具有非常高的GMR比，并且具有良好的钉扎强度。