Abstract:
Examples herein relate to polarization diversity optical interface assemblies including a single mode optical fiber and first and second grating couplers disposed on a substrate. The first and second grating couplers are coupled to first and second waveguides, respectively. The assemblies further includes an optical connector to couple light between the single mode optical fiber and each of the first and second grating couplers. The optical connector includes a ferrule and a walk-off crystal. The ferrule is coupled to a portion of the single mode optical fiber. The walk-off crystal is configured to spatially separate the light into first and second orthogonal polarization modes prior to passing through the respective first and second grating couplers and/or combine the first and second polarization modes of the light prior to passing through the single mode optical fiber.
Abstract:
In some examples a silicon photonic (SiPh) solder reflowable assembly may comprise a silicon interposer bonded to an organic substrate, the silicon interposer having an optical grating disposed on the interposer to couple an optical signal, a lens array chip, the lens array comprising one or more lenses on a wafer, the lens array chip flip chip reflowed to the silicon interposer by a bonding agent and the one or more lenses having a predetermined shape that expands, collimates, and tilts a beam of the optical signal exiting the grating. The wafer has a coefficient of thermal expansion (CTE) that matches silicon and the one or more lenses and the grating are aligned in such a way the optical signal enters the grating at a desired angle.
Abstract:
In example implementations of a vertical-cavity surface-emitting laser (VCSEL), the VCSEL includes a p-type distributed Bragg reflector (p-DBR) layer end a p-type ohmic (p-ohmic) contact layer adjacent to the p-DBR layer. The p-DBR layer may include an oxide aperture and the p-ohmic contact layer may have an opening that is aligned with the oxide aperture. The opening may be filled with a dielectric material. A metal layer may be coupled to the p-ohmic contact layer and encapsulate the dielectric material.
Abstract:
In the examples provided herein, a data center transmission system includes a VCSEL (vertical-cavity surface-emitting laser) that lases in a single spatial mode with a side mode suppression ratio of at least 25 dB, where the VCSEL is formed on a substrate and lases at a wavelength transparent to the substrate, and further where an output of the VCSEL exits through the substrate. Also, the VCSEL is directly modulated. The system further includes an optical fiber having a first end to receive the output of the VCSEL for propagation along the optical fiber. The optical fiber supports a single spatial mode without supporting higher order spatial modes over a range of wavelengths between 1260 nm and 1360 nm. The system also includes a receiver to receive the directly modulated output of the VCSEL after propagation through the optical fiber.
Abstract:
Examples herein relate to a Wavelength Division Multiplexing (WDM) optical module configured for M optical fibers, N WDM wavelengths and M×N optical signals. The module comprises an active silicon interposer, the interposer comprises a (M/2)×N array of photodetectors established on a front side of the interposer and N chips for the N WDM wavelengths. Each chip comprises M lenses for M optical signals, the M lenses established on a back side of a GaAs substrate, the M lenses comprising a first group of M/2 lenses to focus M/2 optical input signals onto M/2 photodetectors of the (M/2)×N array, and a second group of M/2 lenses to collimate M/2 optical output signals, and M/2 Vertical Cavity Surface Emitting Lasers (VCSELs) established on a front side of the GaAs substrate to generate the M/2 optical output signals.
Abstract:
An example device includes a first semiconductor component comprising at least two lasers to emit light at a first wavelength; a second semiconductor component comprising at least two lasers to emit light at a second wavelength, the first wavelength being different from the second wavelength; and an optical multiplexer to receive light from two lasers at the first wavelength and light from two lasers at the second wavelength. The optical multiplexer component includes a first output interface to couple light from one laser at the first wavelength and light from one laser at the second wavelength to a first optical fiber, and a second output interface to couple light from one laser at the first wavelength and light from one laser at the second wavelength beams to a second optical fiber.
Abstract:
A device includes a first element and a second element. The first element includes a plurality of mirrors formed as concave features on the first element. The second element is to support a plurality of filters. The first element is coupleable to the second element to align the plurality of mirrors relative to the plurality of filters to operate as a multiplexer or de-multiplexer.
Abstract:
Examples described herein relate to an optical device that entails phase shifting an optical signal. The optical device includes an optical waveguide having a first semiconductor material region and a second semiconductor material region formed adjacent to each other and defining a junction therebetween. Further, the optical device includes an insulating layer formed on top of the optical waveguide. Moreover, the optical device includes a III-V semiconductor layer formed on top of the insulating layer causing an optical mode of an optical signal passing through the optical waveguide to overlap with the first semiconductor material region, the second semiconductor material region, the insulating layer, and the III-V semiconductor layer thereby resulting in a phase shift in the optical signal passing through the optical waveguide.
Abstract:
Examples described herein relate to an optical device. The optical device includes a first microring resonator (MRR) laser having a first resonant frequency and a first free spectral range (FSR). The first FSR is greater than a channel spacing of the optical device. Further, the optical device includes a first frequency-dependent filter formed along a portion of the first MRR laser via a common bus waveguide to attenuate one or more frequencies different from the first resonant frequency. A length of the common bus waveguide is chosen to achieve a second FSR of the common bus waveguide to be substantially equal to the channel spacing to enable a single-mode operation for the optical device. Moreover, the optical device includes a first reflector formed at a first end of the common bus waveguide to enhance a unidirectionality of optical signal within the first MRR laser.
Abstract:
Examples herein relate to optical modules. In particular, implementations herein relate to optical modules that include top-emitting VCSELs and/or top-entry photodetectors. The optical modules include a first interposer having opposing first and second sides and a second interposer having opposing first and second sides. The optical modules include a plurality of top-emitting vertical-cavity surface-emitting lasers (VCSELs) coupled to the second interposer and a plurality of electrical conductors forming electrical paths between electrical contacts of the top-emitting VCSELs and the second side of the second interposer. The VCSELs are configured to emit optical signals having different wavelengths. The optical signals are configured to be combined and transmitted over a single optical fiber.