公开(公告)号：US11650494B2

公开(公告)日：2023-05-16

申请号：US17575463

申请日：2022-01-13

Applicant: HOYA CORPORATION

Inventor： Masanori Nakagawa ,  Hirofumi Kozakai

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: The substrate with a multilayer reflective film includes a substrate and the multilayer reflective film configured to reflect exposure light, the multilayer reflective film comprising a stack of alternating layers on a substrate, the alternating layers including a low refractive index layer and a high refractive index layer, in which the multilayer reflective film contains molybdenum (Mo) and at least one additive element selected from nitrogen (N), boron (B), carbon (C), zirconium (Zr), oxygen (O), hydrogen (H) and deuterium (D), and the crystallite size of the multilayer reflective film calculated from a diffraction peak of Mo (110) by X-ray diffraction is 2.5 nm or less.

公开(公告)号：US10429728B2

公开(公告)日：2019-10-01

申请号：US15824227

申请日：2017-11-28

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  G03F1/60 ,  G03F1/50 ,  G03F7/20 ,  H01L21/033

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≥350 (%/nm), and has a maximum height (Rmax)≤1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

公开(公告)号：US10001699B2

公开(公告)日：2018-06-19

申请号：US15275719

申请日：2016-09-26

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  C03C3/06 ,  G03F1/48 ,  G02B5/08 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/20 ,  C03C17/34 ,  C03C17/36 ,  C03C23/00 ,  G03F7/16 ,  H01L21/308

CPC classification number: G03F1/48 ,  B82Y10/00 ,  B82Y40/00 ,  C03C3/06 ,  C03C17/3435 ,  C03C17/3626 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3665 ,  C03C23/0075 ,  C03C2201/42 ,  C03C2218/33 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G03F1/22 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/70733 ,  H01L21/3081 ,  H01L21/3085

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.

公开(公告)号：US20150205196A1

公开(公告)日：2015-07-23

申请号：US14423494

申请日：2013-09-24

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/76 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/52

CPC classification number: G03F1/76 ,  G03F1/24 ,  G03F1/52 ,  G03F1/68 ,  G03F7/20 ,  H01L21/0274

Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.The present invention relates to a method of manufacturing a substrate with a multilayer reflective film having a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, on the main surface of a mask blank substrate on the side of which a transfer pattern is formed, comprising a step of: depositing the multilayer reflective film on the main surface by ion beam sputtering using targets composed of a high refractive index material and a low refractive index material; wherein, during the ion beam sputtering, sputtered particles of the high refractive index material and the low refractive index material are made to enter at prescribed incident angle relative to the normal of the main surface so that the power spectral density in a prescribed spatial frequency region is a prescribed value.

Abstract translation: 本发明的目的是提供一种具有多层反射膜的基板，即使在使用具有各种波长的光的高灵敏度缺陷检查装置的情况下，能够减少检测到的伪缺陷的数量，特别是能够实现 同时可靠地检测由于检测到的伪缺陷的数量而导致的关键缺陷的多层反射膜的基板的平滑度以及其制造方法。 本发明涉及一种具有多层反射膜的基板的制造方法，所述多层反射膜具有通过交替层叠高折射率层和低折射率层而获得的多层反射膜，所述多层反射膜在所述侧面上的掩模基板的主表面上 其中形成转印图案的步骤包括以下步骤：通过使用由高折射率材料和低折射率材料构成的靶使用离子束溅射将多层反射膜沉积在主表面上; 其中，在离子束溅射期间，使高折射率材料和低折射率材料的溅射颗粒相对于主表面的法线以规定的入射角进入，使得在规定的空间频率区域中的功率谱密度 是规定值。

公开(公告)号：US11003068B2

公开(公告)日：2021-05-11

申请号：US16490018

申请日：2018-02-20

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Tsutomu Shoki ,  Takahiro Onoue ,  Hirofumi Kozakai

IPC: G03F1/24 ,  G03F1/26

Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k

公开(公告)号：US10347485B2

公开(公告)日：2019-07-09

申请号：US15508544

申请日：2015-09-14

Applicant: HOYA CORPORATION

Inventor： Tsutomu Shoki ,  Tatsuo Asakawa ,  Hirofumi Kozakai

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/54 ,  G03F1/76 ,  G03F1/80 ,  G03F1/86 ,  G03F7/20 ,  C23C14/18 ,  C23C14/34 ,  C23C14/46 ,  C23C14/58 ,  H01L21/027 ,  C23C14/00 ,  C23C14/06 ,  C23C14/35

Abstract: The present invention aims to provide a reflective mask blank and a reflective mask which have a highly smooth multilayer reflective film as well as a low number of defects, and methods of manufacturing the same, and aims to prevent charge-up during a mask defect inspection using electron beams.The present invention provides a reflective mask blank for EUV lithography in which a conductive underlying film, a multilayer reflective film that reflects exposure light, and an absorber film that absorbs exposure light are layered on a substrate, wherein the conductive underlying film is a single-layer film made of a tantalum-based material or a ruthenium-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film, or the conductive underlying film is a multilayer film including a layer of a tantalum-based material with a film thickness of greater than or equal to 1 nm and less than or equal to 10 nm that is formed adjacent to the multilayer reflective film and a layer of a conductive material that is formed between the layer of the tantalum-based material and the substrate. The present invention also provides a reflective mask manufactured using the reflective mask blank. Furthermore, a semiconductor device is manufactured using the reflective mask.

公开(公告)号：US09897909B2

公开(公告)日：2018-02-20

申请号：US15134776

申请日：2016-04-21

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/20 ,  H01L21/033

CPC classification number: G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2004 ,  H01L21/0332 ,  H01L21/0334

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

公开(公告)号：US09348217B2

公开(公告)日：2016-05-24

申请号：US14348349

申请日：2013-03-28

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/50 ,  G03F1/22 ,  G03F1/60

CPC classification number: G03F1/22 ,  G03F1/50 ,  G03F1/60 ,  G03F7/2004 ,  H01L21/0332 ,  H01L21/0334

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≧350 (%/nm), and has a maximum height (Rmax)≦1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

Abstract translation: 公开了一种用于光刻的掩模空白基板，其中基板的主表面满足关系式（BA70-BA30）/（BD70-BD30）≥350（％/ nm），并具有最大高度（Rmax） ＆nlE; 1.2nm的轴承面积（％）和轴承深度（nm）之间的关系，通过使用原子力显微镜测量在基板侧的主表面中的1μm的面积， 形成转印图案，其中BA30被定义为30％的轴承面积，BA70被定义为70％的轴承面积，并且BD70和BD30被定义为分别表示30％的轴承面积的轴承深度和轴承 面积达70％。

公开(公告)号：US20150017574A1

公开(公告)日：2015-01-15

申请号：US14348413

申请日：2013-03-28

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  G03F7/20 ,  G02B5/08

CPC classification number: G03F1/48 ,  B82Y10/00 ,  B82Y40/00 ,  C03C3/06 ,  C03C17/3435 ,  C03C17/3626 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3665 ,  C03C23/0075 ,  C03C2201/42 ,  C03C2218/33 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G03F1/22 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/70733 ,  H01L21/3081 ,  H01L21/3085

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.

Abstract translation: 公开了一种用于光刻的掩模空白基板，其中形成基板的转印图案的主表面具有通过测量1μm×1的面积获得的不大于0.15nm的均方根粗糙度（Rms） 具有原子力显微镜，并且在不小于1μm-1的空间频率下具有不大于10nm 4的功率谱密度。