公开(公告)号：US10551733B2

公开(公告)日：2020-02-04

申请号：US15554335

申请日：2016-01-19

Applicant: HOYA CORPORATION

Inventor： Atsushi Kominato ,  Osamu Nozawa

IPC: G03F1/32 ,  G03F7/20 ,  H01L21/027

Abstract: A mask blank including a phase shift film is provided, wherein the phase shift film has a predetermined transmittance and a predetermined phase difference with respect to exposure light of an ArF excimer laser, and it is relatively easy to detect an etching end point for detecting a boundary between the phase shift film and a transparent substrate upon the EB defect repair.The phase shift film has a function to transmit the exposure light of the ArF excimer laser at a transmittance of not less than 10% and not more than 20%, and a function to generate a phase difference of not less than 150 degrees and not more than 190 degrees between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for the same distance as a thickness of the phase shift film. The phase shift film is made of a material containing a metal, silicon, nitrogen, and oxygen. A ratio of the metal content to the total content of the metal and silicon in the phase shift film is not less than 5% and not more than 10%, the oxygen content in the phase shift film is 10 atom % or more, and the silicon content in the phase shift film is three times or more the oxygen content.

公开(公告)号：US09726972B2

公开(公告)日：2017-08-08

申请号：US14904452

申请日：2014-08-15

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido ,  Ryo Ohkubo ,  Osamu Nozawa

IPC: G03F1/32 ,  G03F1/80 ,  G03F1/58 ,  H01L21/027 ,  C23F4/00

CPC classification number: G03F1/80 ,  C23F4/00 ,  G03F1/32 ,  G03F1/58 ,  H01L21/027

Abstract: A mask blank wherein damage to a light semitransmissive film due to dry etching for removing a light shielding film is inhibited. Mask blank 100 has a light semitransmissive film 2 and light shielding film 4 laminated on a main surface of a transparent substrate 1. Film 2 can be dry etched with a fluorine-based gas. Film 4 has laminated lower layer 41 and upper layer 42. Lower layer 41 contained tantalum and id substantially free from hafnium, zirconium, and oxygen. Upper layer 42 contains tantalum and one or more of hafnium and zirconium and is substantially free from oxygen excluding the surface layer of the upper layer 42. Between the light semitransmissive film 2 and lower layer 41 is an etching stopper film 3 having etch selectivity with respect to the lower layer 41 in dry etching with an etching gas containing the chlorine-based gas and no oxygen gas.

公开(公告)号：US09436079B2

公开(公告)日：2016-09-06

申请号：US14627426

申请日：2015-02-20

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Hiroaki Shishido ,  Kazuya Sakai

IPC: G03F1/32 ,  C23C14/00 ,  C23C14/06 ,  G03F1/54 ,  G03F7/20 ,  G03F1/26 ,  B82Y30/00

CPC classification number: G03F1/32 ,  B82Y30/00 ,  C23C14/0036 ,  C23C14/0641 ,  G03F1/26 ,  G03F1/54 ,  G03F7/2041 ,  Y10S977/755

Abstract: Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.

公开(公告)号：US12153338B2

公开(公告)日：2024-11-26

申请号：US17438194

申请日：2020-02-20

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido ,  Ryo Ohkubo ,  Osamu Nozawa

IPC: G03F1/32

Abstract: A mask blank 100 has a structure in which a pattern-forming thin film 3 and a hard mask film 4 are formed on a transparent substrate 1 in this order. An Si2p narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of at least 103 eV. An N1s narrow spectrum obtained by analyzing the hard mask film by X-ray photoelectron spectroscopy has a maximum peak below a detection lower limit value. In the hard mask film 4, a content ratio (atomic %) of silicon and oxygen is Si:O=1:less than 2.

公开(公告)号：US11231645B2

公开(公告)日：2022-01-25

申请号：US16282699

申请日：2019-02-22

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido ,  Osamu Nozawa

IPC: G03F1/32 ,  G03F1/80 ,  G03F1/58 ,  H01L21/324 ,  H01L21/00

Abstract: A mask blank, which is capable of being formed with high transfer accuracy when a hard mask film pattern is used as a mask, and even when the mask blank includes a chromium-based light shielding film. A light-semitransmissive film, a light shielding film, and a hard mask film are laminated in the stated order on a transparent substrate. The light-semitransmissive film contains silicon, and the hard mask film contains any one or both of silicon and tantalum. The light shielding film has a laminate structure of a lower layer and an upper layer, and contains chromium. The upper layer has a content of chromium of 65 at % or more, and a content of oxygen of less than 20 at %, and the lower layer has a content of chromium of less than 60 at %, and a content of oxygen of 20 at % or more.

公开(公告)号：US11016382B2

公开(公告)日：2021-05-25

申请号：US16704832

申请日：2019-12-05

Applicant: HOYA CORPORATION

Inventor： Atsushi Kominato ,  Osamu Nozawa

IPC: G03F1/32 ,  G03F1/74 ,  G03F1/54 ,  C23C14/06 ,  C23C14/58 ,  G03F7/20 ,  H01L21/027

Abstract: A mask blank including a phase shift film is provided, wherein the phase shift film has a transmittance with respect to exposure light of an ArF excimer laser of not less than 10% and not more than 20% and is configured to transmit the exposure light to have a phase difference of not less than 150 degrees and not more than 190 degrees with respect to exposure light transmitted through the air for the same distance as a thickness of the phase shift film. A ratio of the metal content to the total content of the metal and silicon in the phase shift film is not less than 5% and not more than 10%, the oxygen content in the phase shift film is 10 atom % or more, and the silicon content in the phase shift film is three times or more the oxygen content.

公开(公告)号：US10942440B2

公开(公告)日：2021-03-09

申请号：US16327716

申请日：2017-08-02

Applicant: HOYA CORPORATION

Inventor： Hiroyuki Iwashita ,  Atsushi Matsumoto ,  Osamu Nozawa

IPC: G03F1/32 ,  G03F1/58 ,  G03F1/26 ,  G03F1/36 ,  G03F1/80 ,  H01L21/3065

Abstract: Provided is a mask blank including a phase shift film having a transmittance of 20% or more difficult to achieve in a phase shift film of a single layer made of a silicon nitride material, and the phase shift film is achieved by using a structure having two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer disposed in order from a transparent substrate side.
The mask blank includes a phase shift film on a transparent substrate. The phase shift film has a function of transmitting exposure light of an ArF excimer laser at a transmittance of 20% or more. The mask blank has two or more sets of a stacked structure, each set including a low transmission layer and a high transmission layer. The low transmission layer is formed of a silicon nitride-based material. The high transmission layer is formed of a silicon oxide-based material. The high transmission layer provided at an uppermost position is thicker than the high transmission layer provided at a position other than the uppermost position. The low transmission layer is thicker than the high transmission layer provided at a position other than the uppermost position.

公开(公告)号：US10495966B2

公开(公告)日：2019-12-03

申请号：US16201344

申请日：2018-11-27

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Hiroaki Shishido ,  Kazuya Sakai

IPC: G03F1/32 ,  G03F1/26 ,  G03F7/20 ,  H01L21/027 ,  G03F1/54

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a function to transmit ArF exposure light therethrough at a predetermined transmittance and generate a predetermined amount of phase shift in the ArF exposure light that is transmitted therethrough, wherein the phase-shift film comprises a structure in which a low transmission layer and a high transmission layer are laminated, the low transmission layer and the high transmission layer are formed from a material consisting of silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from semi-metallic elements, non-metallic elements and noble gases, and the low transmission layer has a relatively low nitrogen content in comparison with the high transmission layer.

公开(公告)号：US10365555B2

公开(公告)日：2019-07-30

申请号：US14892260

申请日：2014-05-19

Applicant: HOYA CORPORATION

Inventor： Hiroaki Shishido ,  Osamu Nozawa ,  Ryo Ohkubo

IPC: G03F1/30 ,  G03F1/32 ,  C23G5/00 ,  G03F1/80

Abstract: In a mask blank having a structure in which a light-semitransmissive film and a light-shielding film are laminated on a main surface of a transparent substrate, the light-semitransmissive film is made of a material that can be dry-etched with an etching gas containing a fluorine-based gas, the light-shielding film is made of a material that contains tantalum and one or more elements selected from hafnium and zirconium and contains no oxygen except in a surface layer thereof, an etching stopper film is provided between the light-semitransmissive film and the light-shielding film, and the etching stopper film is made of a material that contains chromium with an oxygen content of 20 at % or less.

公开(公告)号：US10114281B2

公开(公告)日：2018-10-30

申请号：US15501659

申请日：2016-08-02

Applicant: HOYA CORPORATION

Inventor： Osamu Nozawa ,  Hiroaki Shishido ,  Takenori Kajiwara

IPC: G03F1/32 ,  G03F1/26 ,  C23C14/06 ,  G03F7/20 ,  H01L21/027

Abstract: Provided is a mask blank with a phase shift film having a function to transmit ArF exposure light at a predetermined transmittance and a function to generate a predetermined phase difference to the transmitting ArF exposure light, and having high ArF light fastness.The phase shift film has a function to transmit ArF exposure light at 2% or more transmittance and a function to generate a phase difference of 150 degrees or more and 180 degrees or less to the transmitting ArF exposure light; a lower layer and an upper layer are stacked from a substrate side; the lower layer is formed from silicon or silicon containing one or more elements selected from nonmetallic elements other than oxygen and semimetal elements; the upper layer other than a surface layer is formed from silicon and nitrogen or a material consisting of silicon, nitrogen and one or more elements selected from nonmetallic elements excluding oxygen and semimetal elements; the lower layer has refractive index n of less than 1.8 and extinction coefficient k of 2.0 or more; the upper layer has refractive index n of 2.3 or more and extinction coefficient k of 1.0 or less; and the upper layer has more thickness than the lower layer.