公开(公告)号：US20170075210A1

公开(公告)日：2017-03-16

申请号：US15122453

申请日：2015-02-24

Applicant: HOYA CORPORATION

Inventor： Hiroaki SHISHIDO ,  Osamu NOZAWA ,  Takashi UCHIDA

IPC: G03F1/32 ,  H01L21/308 ,  G03F7/20 ,  G03F7/34 ,  G03F1/80 ,  G03F1/58

CPC classification number: G03F1/32 ,  G03F1/58 ,  G03F1/80 ,  G03F7/20 ,  G03F7/34 ,  H01L21/3081 ,  H01L21/3086

Abstract: A mask blank having a structure in which, on a transparent substrate, a phase shift film, a light shielding film, and a hard mask film are laminated in the stated order from the transparent substrate side. The phase shift film is formed of a material containing silicon, the hard mask film is formed of a material containing at least one element selected from silicon and tantalum, and the light shielding film is formed of a material containing chromium. The mask blank has a structure in which the following three layers: a lower layer, an intermediate layer, and an upper layer are laminated, the upper layer having a highest content of chromium in the light shielding film, the intermediate layer having a lowest content of chromium in the light shielding film, and containing at least one metallic element selected from indium, tin, and molybdenum.

Abstract translation: 从透明基板侧按顺序层叠有透明基板上的相移膜，遮光膜和硬掩模膜的结构的掩模坯料。 相移膜由含硅的材料形成，硬掩模膜由含有至少一种选自硅和钽的元素的材料形成，并且遮光膜由含铬的材料形成。 掩模坯料具有层叠以下三层：下层，中间层和上层的结构，在遮光膜中上层具有最高铬含量，中间层具有最低含量 并且含有至少一种选自铟，锡和钼的金属元素。

公开(公告)号：US20230025358A1

公开(公告)日：2023-01-26

申请号：US17958088

申请日：2022-09-30

Applicant: HOYA CORPORATION

Inventor： Kazuhiro HAMAMOTO ,  Takashi UCHIDA

IPC: G03F1/24

Abstract: A reflective film coated substrate includes a substrate having two main surfaces opposite to each other and end faces connected to outer edges of the two main surfaces; and a reflective film formed on one of the main surfaces and extending onto at least part of the end faces. The reflective film on the main surface has a multilayer structure including low refractive index layers and high refractive index layers alternately formed. The reflective film which extends onto the end faces has a single-layer structure containing a first element higher in content than any other element in the low refractive index layers and a second element higher in content than any other element in the high refractive index layers.

公开(公告)号：US20220244630A1

公开(公告)日：2022-08-04

申请号：US17618858

申请日：2020-06-10

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Takashi UCHIDA

IPC: G03F1/24 ,  H01L21/027 ,  G21K1/06 ,  H01L21/033

Abstract: Provided is a substrate with a thin film comprising a thin film having excellent chemical resistance. A substrate with a thin film comprises a thin film on at least one of two main surfaces of the substrate. The thin film comprises chromium. When a diffracted X-ray intensity with respect to a diffraction angle 2θ is measured by an X-ray diffraction method using a CuKα ray for the thin film, a peak is detected in a range where the diffraction angle 2θ is 56 degrees or more and 60 degrees or less.

公开(公告)号：US20200379338A1

公开(公告)日：2020-12-03

申请号：US16955002

申请日：2018-10-31

Applicant: HOYA CORPORATION ,  HOYA ELECTRONICS SINGAPORE PTE. LTD.

Inventor： Hiroaki SHISHIDO ,  Masahiro HASHIMOTO ,  Takashi UCHIDA ,  Mariko UCHIDA

IPC: G03F1/32 ,  G03F1/54

Abstract: In a mask blank, a phase shift film in contact with a transparent substrate includes a stack of two or more layers including a lowermost layer. The, layers other than the lowermost layer are made of a material consisting of silicon and one or more elements selected from a metalloid element and anon-metallic element. The lowermost layer is made of a material consisting of silicon and nitrogen and, optionally, one or more elements selected from a metalloid element and anon-metallic element. A ratio of a number of Si3N4 bonds present in the lowermost layer to a total number of Si3N4 bonds, SiaNb bonds (provided that b/[a+b]

公开(公告)号：US20180180987A1

公开(公告)日：2018-06-28

申请号：US15897330

申请日：2018-02-15

Applicant: HOYA CORPORATION

Inventor： Atsushi MATSUMOTO ,  Hiroaki SHISHIDO ,  Takashi UCHIDA

IPC: G03F1/32 ,  G03F1/58 ,  G03F7/20

CPC classification number: G03F1/32 ,  G03F1/58 ,  G03F7/2053

Abstract: To provide a phase-shift mask in which the reduction in thickness of a light-shielding film is provided when a transition metal silicide-based material is used for the light-shielding film and by which the problem of ArF light fastness can be solved; and a mask blank for manufacturing the phase-shift mask.A mask blank has a structure in which a phase-shift film, an etching stopper film, a light-shielding film, and a hard mask film are laminated in said order on a transparent substrate, and at least one layer in the light-shielding film is made of a material which contains transition metal and silicon, and satisfies the conditions of Formula (1) below: CN≤9.0×10−6×RM4−1.65×10−4×RM3−7.718×10−2×RM2+3.611×RM−21.084   Formula (1) wherein RM is a ratio of the content of transition metal to the total content of transition metal and silicon in said one layer, and CN is the content of nitrogen in said one layer.