公开(公告)号：US20230133304A1

公开(公告)日：2023-05-04

申请号：US17913099

申请日：2021-03-22

Applicant: HOYA CORPORATION

Inventor： Kota SUZUKI ,  Masanori NAKAGAWA ,  Takahiro ONOUE

IPC: G03F1/24 ,  G03F1/54 ,  G03F1/48

Abstract: Provided are a substrate with a multilayer reflective film, a reflective mask blank, a reflective mask, and a method for manufacturing a semiconductor device, having high resistance to an etching gas used for etching an absorber film and/or an etching mask film and capable of suppressing occurrence of blister.
A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 formed on the substrate 10, and a protective film 14 formed on the multilayer reflective film 12. The protective film 14 comprises ruthenium (Ru), rhodium (Rh), and at least one additive element selected from the group consisting of titanium (Ti), zirconium (Zr), yttrium (Y), niobium (Nb), vanadium (V), and hafnium (Hf).

公开(公告)号：US20220244630A1

公开(公告)日：2022-08-04

申请号：US17618858

申请日：2020-06-10

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Takashi UCHIDA

IPC: G03F1/24 ,  H01L21/027 ,  G21K1/06 ,  H01L21/033

Abstract: Provided is a substrate with a thin film comprising a thin film having excellent chemical resistance. A substrate with a thin film comprises a thin film on at least one of two main surfaces of the substrate. The thin film comprises chromium. When a diffracted X-ray intensity with respect to a diffraction angle 2θ is measured by an X-ray diffraction method using a CuKα ray for the thin film, a peak is detected in a range where the diffraction angle 2θ is 56 degrees or more and 60 degrees or less.

公开(公告)号：US20210103209A1

公开(公告)日：2021-04-08

申请号：US16955734

申请日：2018-12-21

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Tsutomu SHOKI

IPC: G03F1/24 ,  G03F1/58 ,  H01L21/033

Abstract: A substrate with a conductive film for manufacturing a reflective mask which has a rear-surface conductive film with high mechanical strength and is capable of correcting positional deviation of the reflective mask from the rear surface side by a laser beam or the like. A substrate with a conductive film has a conductive film formed on one surface of a main surface of a mask blank substrate used for lithography, wherein the conductive film includes a transparent conductive layer provided on a substrate side and an upper layer provided on the transparent conductive layer, the conductive film has a transmittance of 10% or more for light of wavelength 532 nm, the upper layer is made of a material including tantalum (Ta) and boron (B), and the upper layer has a film thickness of 0.5 nm or more and less than 10 nm.

公开(公告)号：US20230314928A1

公开(公告)日：2023-10-05

申请号：US18024918

申请日：2021-09-15

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: A substrate with a multilayer reflective film, a reflective mask blank, a method for manufacturing a reflective mask, and a method for manufacturing a semiconductor device capable of preventing film peeling of a multilayer reflective film due to cleaning or the like during a mask manufacturing process and use of a mask, and reducing occurrence of defects on an absorber film due to the film peeling of the multilayer reflective film.

公开(公告)号：US20220342293A1

公开(公告)日：2022-10-27

申请号：US17761100

申请日：2020-09-23

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA

IPC: G03F1/24 ,  G03F1/76 ,  G03F1/58

Abstract: Provided is a substrate with a multilayer reflective film, the substrate being used for manufacturing a reflective mask blank and a reflective mask each having a multilayer reflective film having a high reflectance to exposure light and a low background level during defect inspection.
A substrate with a multilayer reflective film 110 comprises a substrate 1 and a multilayer reflective film 5. The multilayer reflective film 5 is formed of a multilayer film in which a low refractive index layer and a high refractive index layer are alternately layered on the substrate 1. The multilayer reflective film 5 comprises at least one additive element selected from hydrogen (H), deuterium (D), and helium (He). The additive element in the multilayer reflective film 5 has an atomic number density of 0.006 atom/nm3 or more and 0.50 atom/nm3 or less.

公开(公告)号：US20220283490A1

公开(公告)日：2022-09-08

申请号：US17635333

申请日：2020-07-13

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Takashi UCHIDA

IPC: G03F1/24

Abstract: A substrate with a conductive film for manufacturing a reflective mask, the substrate comprising a conductive film having excellent chemical resistance and a small surface roughness (Rms), is obtained.
A substrate with a conductive film comprises a conductive film on one of two main surfaces of the substrate. The conductive film comprises chromium. The conductive film comprises a structure in which a lower layer and an upper layer are layered in this order from the substrate side. The lower layer is amorphous. The upper layer has a crystallinity.

公开(公告)号：US20240411220A1

公开(公告)日：2024-12-12

申请号：US18701869

申请日：2022-10-26

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Kota SUZUKI ,  Hibiki KISHIDA

IPC: G03F1/24 ,  H01L21/033

Abstract: [Problem] To obtain a substrate with a multilayer reflective film capable of suppressing a decrease in reflectance of a multilayer reflective film with respect to EUV light for the substrate with a multilayer reflective film having a structure in which a protective film containing metal is disposed.
[Solution] A substrate with a multilayer reflective film includes a substrate, a multilayer reflective film on the substrate, and a protective film on the multilayer reflective film. The protective film includes a silicon-containing layer, a first layer, a second layer, and a third layer in this order on the multilayer reflective film. The protective film contains metal and nitrogen. When a nitrogen content of the first layer is represented by N1, a nitrogen content of the second layer is represented by N2, and a nitrogen content of the third layer is represented by N3, N2 is larger than N1 and N3.

公开(公告)号：US20240142866A1

公开(公告)日：2024-05-02

申请号：US18282493

申请日：2022-03-25

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA

IPC: G03F1/24 ,  G03F1/48 ,  G03F1/54

CPC classification number: G03F1/24 ,  G03F1/48 ,  G03F1/54

Abstract: Provided are a reflective mask blank, a reflective mask, a method for manufacturing a reflective mask, and a method for manufacturing a semiconductor device, capable of preventing occurrence of electrostatic breakdown in a substrate peripheral edge portion.
The reflective mask blank comprises a substrate, a multilayer reflective film on the substrate, a protective film on the multilayer reflective film, and an absorber film on the protective film. The absorber film comprises a buffer layer and an absorption layer formed on the buffer layer. When a distance from a center of the substrate to an outer peripheral end of the protective film is denoted by Lcap, and a distance from the center of the substrate to an outer peripheral end of the buffer layer is denoted by Lbuf, Lcap≤Lbuf is satisfied. There is at least one location where a total film thickness of the protective film and the buffer layer is 4.5 nm or more in a range of 0.5 mm or less from a side surface of the substrate 10 toward the center of the substrate.

公开(公告)号：US20230418148A1

公开(公告)日：2023-12-28

申请号：US18039192

申请日：2021-12-16

Applicant: HOYA CORPORATION

Inventor： Ikuya FUKASAWA ,  Kota SUZUKI ,  Masanori NAKAGAWA

IPC: G03F1/24

CPC classification number: G03F1/24

Abstract: Provided are a substrate with a multilayer reflective film comprising a protective film having high resistance to a fluorine-based etching gas used in an absorber pattern repair step without reducing a reflectance of the multilayer reflective film, a reflective mask blank, and a reflective mask.
A substrate with a multilayer reflective film 100 comprises a substrate 10, a multilayer reflective film 12 disposed on the substrate 10, and a protective film 14 disposed on the multilayer reflective film 12. The protective film 14 comprises a first metal and a second metal. Standard free energy of formation of a fluoride of the first metal is higher than standard free energy of formation of RuF5. The second metal has an extinction coefficient of 0.03 or less at a wavelength of 13.5 nm.

公开(公告)号：US20230072220A1

公开(公告)日：2023-03-09

申请号：US17793329

申请日：2021-03-11

Applicant: HOYA CORPORATION

Inventor： Masanori NAKAGAWA ,  Kota SUZUKI ,  Takashi UCHIDA

IPC: G03F1/24 ,  G03F1/52

Abstract: Provided is a substrate with a multilayer reflective film capable of sufficiently reducing a reflectance of the multilayer reflective film with respect to EUV exposure light and preventing occurrence of a phenomenon in which a surface of a protective film on the multilayer reflective film swells and a phenomenon in which the protective film peels off.
A substrate with a multilayer reflective film 110 comprises a multilayer reflective film 5 and a protective film 6 in this order on a main surface of a substrate 1. The substrate 1 contains silicon, titanium, and oxygen as main components, and further contains hydrogen. The multilayer reflective film 5 has a structure in which a low refractive index layer and a high refractive index layer are alternately layered. The multilayer reflective film 5 comprises hydrogen. Hydrogen in the multilayer reflective film 5 has an atomic number density of 7.0×10−3 atoms/nm3 or less.