公开(公告)号：US10429728B2

公开(公告)日：2019-10-01

申请号：US15824227

申请日：2017-11-28

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  G03F1/60 ,  G03F1/50 ,  G03F7/20 ,  H01L21/033

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein a main surface of the substrate satisfies a relational equation of (BA70−BA30)/(BD70−BD30)≥350 (%/nm), and has a maximum height (Rmax)≤1.2 nm in a relation between a bearing area (%) and a bearing depth (nm) obtained by measuring, with an atomic force microscope, an area of 1 μm×1 μm in the main surface on the side of the substrate where a transfer pattern is formed, wherein BA30 is defined as a bearing area of 30%, BA70 is defined as a bearing area of 70%, and BD70 and BD30 are defined to respectively represent bearing depths for the bearing area of 30% and the bearing area of 70%.

公开(公告)号：US10001699B2

公开(公告)日：2018-06-19

申请号：US15275719

申请日：2016-09-26

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Youichi Usui ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/22 ,  C03C3/06 ,  G03F1/48 ,  G02B5/08 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/20 ,  C03C17/34 ,  C03C17/36 ,  C03C23/00 ,  G03F7/16 ,  H01L21/308

CPC classification number: G03F1/48 ,  B82Y10/00 ,  B82Y40/00 ,  C03C3/06 ,  C03C17/3435 ,  C03C17/3626 ,  C03C17/3636 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3665 ,  C03C23/0075 ,  C03C2201/42 ,  C03C2218/33 ,  G02B5/08 ,  G02B5/0816 ,  G02B5/0891 ,  G03F1/22 ,  G03F7/16 ,  G03F7/2002 ,  G03F7/2004 ,  G03F7/70733 ,  H01L21/3081 ,  H01L21/3085

Abstract: Disclosed is a mask blank substrate for use in lithography, wherein the main surface on which the transfer pattern of the substrate is formed has a root mean square roughness (Rms) of not more than 0.15 nm obtained by measuring an area of 1 μm×1 μm with an atomic force microscope, and has a power spectrum density of not more than 10 nm4 at a spatial frequency of not less than 1 μm−1.

公开(公告)号：US09581895B2

公开(公告)日：2017-02-28

申请号：US14655190

申请日：2013-12-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/50 ,  G03F1/60 ,  G03F1/80 ,  G03F7/20 ,  G03F1/24

CPC classification number: G03F1/60 ,  G03F1/24 ,  G03F1/80 ,  G03F1/84 ,  G03F7/20 ,  G03F7/2004

Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.

Abstract translation: 本发明的目的是提供一种掩模板基板等，即使使用使用光的高灵敏度缺陷检查装置，由于减少包括伪缺陷在内的检测缺陷的数量，能够可靠地检测临界缺陷 的各种波长。 本发明涉及一种用于光刻的掩模坯料基板，其中通过测量0.14mm×0.1mm的区域得到的空间频率为1×10 -2μm-1 -1μm-1的功率谱密度 用白光干涉仪在640×480像素上形成转印图案的掩模坯料基板的主表面不大于4×106nm 4，空间频率处的功率谱密度不为 通过用原子力显微镜测量主表面上的1μm×1μm的区域获得的小于1μm的不超过10nm 4。

公开(公告)号：US20150205196A1

公开(公告)日：2015-07-23

申请号：US14423494

申请日：2013-09-24

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Kazuhiro Hamamoto ,  Hirofumi Kozakai ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/76 ,  G03F1/68 ,  G03F7/20 ,  H01L21/027 ,  G03F1/52

CPC classification number: G03F1/76 ,  G03F1/24 ,  G03F1/52 ,  G03F1/68 ,  G03F7/20 ,  H01L21/0274

Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film that enables the number of detected pseudo defects, to be reduced even when using highly sensitive defect inspection apparatuses using light of various wavelengths, and in particular, is capable of achieving a level of smoothness required of substrates with a multilayer reflective film while reliably detecting critical defects as a result of reducing the number of detected pseudo defects, as well as a method of manufacturing the same.The present invention relates to a method of manufacturing a substrate with a multilayer reflective film having a multilayer reflective film, obtained by alternately laminating a high refractive index layer and a low refractive index layer, on the main surface of a mask blank substrate on the side of which a transfer pattern is formed, comprising a step of: depositing the multilayer reflective film on the main surface by ion beam sputtering using targets composed of a high refractive index material and a low refractive index material; wherein, during the ion beam sputtering, sputtered particles of the high refractive index material and the low refractive index material are made to enter at prescribed incident angle relative to the normal of the main surface so that the power spectral density in a prescribed spatial frequency region is a prescribed value.

Abstract translation: 本发明的目的是提供一种具有多层反射膜的基板，即使在使用具有各种波长的光的高灵敏度缺陷检查装置的情况下，能够减少检测到的伪缺陷的数量，特别是能够实现 同时可靠地检测由于检测到的伪缺陷的数量而导致的关键缺陷的多层反射膜的基板的平滑度以及其制造方法。 本发明涉及一种具有多层反射膜的基板的制造方法，所述多层反射膜具有通过交替层叠高折射率层和低折射率层而获得的多层反射膜，所述多层反射膜在所述侧面上的掩模基板的主表面上 其中形成转印图案的步骤包括以下步骤：通过使用由高折射率材料和低折射率材料构成的靶使用离子束溅射将多层反射膜沉积在主表面上; 其中，在离子束溅射期间，使高折射率材料和低折射率材料的溅射颗粒相对于主表面的法线以规定的入射角进入，使得在规定的空间频率区域中的功率谱密度 是规定值。

公开(公告)号：US20250019289A1

公开(公告)日：2025-01-16

申请号：US18767122

申请日：2024-07-09

Applicant: CORNING INCORPORATED ,  HOYA CORPORATION

Inventor： Steven Bruce Dawes ,  Douglas Hull Jennings ,  Toshihiko Orihara ,  Pushkar Tandon

IPC: C03B19/06 ,  C03B25/02 ,  C03C3/076

Abstract: A method of forming a glass body, the method including pressing titania-doped silica soot to form a molded body, consolidating the molded body by heating the molded body, annealing the consolidated molded body, and polishing at least one surface of the annealed molded body to form the glass body. After the polishing, the at least one surface of the glass body has a waviness amplitude of about 0.60 nm or less in the spatial frequency range of 0.05 mm−1 or more and 0.2 mm−1 or less.

公开(公告)号：US10481488B2

公开(公告)日：2019-11-19

申请号：US14654753

申请日：2013-12-24

Applicant: HOYA CORPORATION

Inventor： Takeyuki Yamada ,  Toshihiko Orihara ,  Takahito Nishimura

IPC: G03F1/60 ,  G03F1/24 ,  G03F1/82 ,  C03C15/00 ,  C03C23/00 ,  B24B29/02 ,  G03F1/80

Abstract: Provided are a mask blank substrate processing device, a mask blank substrate processing method, a mask blank substrate fabrication method, a mask blank fabrication method, and a transfer mask fabrication method, for surface processing a mask blank substrate such that a high-level smoothness and a low-defect quality are satisfied. A mask blank substrate processing device (1) comprises: substrate support means (3) for supporting a substrate (Y); a catalytic surface plate (4) comprising a catalytic face (4a) which is positioned opposite the principal surface of the substrate (Y); relative movement means (5) for causing the catalytic face (4a) and the principal surface to move relative to each other in a state of being either in contact or in close proximity; first processing fluid supply means (6) which supplies a first processing fluid for CARE to the principal surface; and physical cleaning means (7) for removing foreign matter which has adhered to the principal surface from the principal surface, using a physical action.

公开(公告)号：US10025176B2

公开(公告)日：2018-07-17

申请号：US15417846

申请日：2017-01-27

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara ,  Tsutomu Shoki ,  Junichi Horikawa

IPC: G03F1/60 ,  G03F1/24 ,  G03F1/80 ,  G03F1/84 ,  G03F7/20

Abstract: An object of the present invention is to provide a mask blank substrate and the like that enables critical defects to be reliably detected as a result of reducing the number of detected defects, including pseudo defects, even when using highly sensitive defect inspection apparatuses that use light of various wavelengths. The present invention relates to a mask blank substrate that is used in lithography, wherein the power spectral density at a spatial frequency of 1×10−2 μm−1 to 1 μm−1, obtained by measuring a 0.14 mm×0.1 mm region on a main surface of the mask blank substrate on the side of which a transfer pattern is formed at 640×480 pixels with a white-light interferometer, is not more than 4×106 nm4, and the power spectral density at a spatial frequency of not less than 1 μm−1, obtained by measuring a 1 μm×1 μm region on the main surface with an atomic force microscope, is not more than 10 nm4.

公开(公告)号：US09798050B2

公开(公告)日：2017-10-24

申请号：US14901575

申请日：2014-09-25

Applicant: HOYA CORPORATION

Inventor： Kazuhiro Hamamoto ,  Toshihiko Orihara

IPC: G03B27/32 ,  G02B5/08 ,  G03F1/24 ,  G02B5/26 ,  G02B5/28 ,  G03F1/52 ,  G03F1/84 ,  G03F7/20 ,  G02B1/14 ,  G02B5/00

CPC classification number: G02B5/0816 ,  G02B1/14 ,  G02B5/003 ,  G02B5/0891 ,  G02B5/26 ,  G02B5/285 ,  G03F1/24 ,  G03F1/52 ,  G03F1/84 ,  G03F7/70216

Abstract: A substrate with a multilayer reflective film capable of facilitating the discovery of contaminants, scratches and other critical defects by inhibiting the detection of pseudo defects attributable to surface roughness of a substrate or film in a defect inspection using a highly sensitive defect inspection apparatus.The substrate with a multilayer reflective film has a multilayer reflective film obtained by alternately laminating a high refractive index layer and a low refractive index layer on a main surface of a mask blank substrate used in lithography, wherein an integrated value I of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 of the surface of the substrate with a multilayer reflective film, obtained by measuring a region measuring 3 μm×3 μm with an atomic force microscope, is not more than 180×10−3 nm3, and the maximum value of the power spectrum density (PSD) at a spatial frequency of 1 μm−1 to 10 μm−1 is not more than 50 nm4.

公开(公告)号：US09488904B2

公开(公告)日：2016-11-08

申请号：US14919994

申请日：2015-10-22

Applicant: HOYA CORPORATION

Inventor： Toshihiko Orihara ,  Akihiro Kawahara ,  Tsutomu Shoki

IPC: G03F1/24 ,  G03F1/38 ,  G03F1/60

CPC classification number: G03F1/24 ,  G03F1/38 ,  G03F1/60

Abstract: Provided is a mask blank glass substrate that has high surface smoothness, that is formed with a fiducial mark capable of improving the detection accuracy of a defect position or the like, and that enables reuse or recycling of a glass substrate included therein. An underlayer is formed on a main surface, on the side where a transfer pattern is to be formed, of a glass substrate for a mask blank. The underlayer serves to reduce surface roughness of the main surface of the glass substrate or to reduce defects of the main surface of the glass substrate. A surface of the underlayer is a precision-polished surface. A fiducial mark which provides a reference for a defect position in defect information is formed on the underlayer.

公开(公告)号：US20140370424A1

公开(公告)日：2014-12-18

申请号：US14373715

申请日：2013-03-21

Applicant: HOYA CORPORATION

Inventor： Takahiro Onoue ,  Toshihiko Orihara

IPC: G03F1/24 ,  H01L21/033

CPC classification number: G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G03F1/48 ,  H01L21/0332 ,  H01L21/0337 ,  Y10T428/31678

Abstract: An object of the present invention is to provide a substrate with a multilayer reflective film and the like used in the manufacturing of a reflective mask blank for EUV lithography which is to be subjected to dry etching with a Cl-based gas, wherein in the substrate with the multilayer reflective film, the loss of protective films by the dry etching and subsequent wet cleaning is very limited. The present invention is a substrate with a multilayer reflective film used in the manufacturing of a reflective mask blank for EUV lithography, comprising a substrate, a multilayer reflective film disposed on the substrate to reflect EUV light, and a protective film disposed on the multilayer reflective film to protect the multilayer reflective film, the protective film includes an alloy containing at least two metals, the alloy being an all-proportional solid solution.

Abstract translation: 本发明的目的是提供一种用于制造用于EUV光刻的反射掩模坯料的多层反射膜等的衬底，其将用Cl基气体进行干蚀刻，其中在衬底 通过多层反射膜，通过干蚀刻和随后的湿法清洁的保护膜的损失非常有限。 本发明是一种具有用于制造用于EUV光刻的反射掩模板的多层反射膜的基板，包括基板，设置在基板上以反射EUV光的多层反射膜以及设置在多层反射层上的保护膜 膜保护多层反射膜，保护膜包括含有至少两种金属的合金，该合金是全比例的固溶体。