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11.发明授权公开(公告)号：US12228852B2
公开(公告)日：2025-02-18
申请号：US18528544
申请日：2023-12-04
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe
Abstract: A reflective mask blank comprises a substrate; a multilayer reflective film which is formed on the substrate and reflects EUV light; and a layered film which is formed on the multilayer reflective film. The layered film has an absolute reflectance of 2.5% or less with respect to EUV light, and comprises a first layer and a second layer that is formed on the first layer; and the first layer comprises a phase shift film which shifts the phase of EUV light. Alternatively, the layered film is a phase shift film which comprises a first layer and a second layer that is formed on the first layer, and which shifts the phase of EUV light; and the first layer comprises an absorption layer that has an absolute reflectance of 2.5% or less with respect to EUV light.
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公开(公告)号：US12105413B2
公开(公告)日：2024-10-01
申请号：US18483484
申请日：2023-10-09
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
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公开(公告)号：US11550215B2
公开(公告)日：2023-01-10
申请号：US17056676
申请日：2019-05-24
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that: the phase-shift film has a first layer and a second layer; the first layer comprises a material that contains at least one element from among tantalum (Ta) and chromium (Cr); and the second layer comprises a metal-containing material that contains ruthenium (Ru) and at least one element from among chromium (Cr), nickel (Ni), cobalt (Co), vanadium (V), niobium (Nb), molybdenum (Mo), tungsten (W), and rhenium (Re).
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14.发明授权公开(公告)号：US11131921B2
公开(公告)日：2021-09-28
申请号：US16054295
申请日：2018-08-03
Applicant: HOYA CORPORATION
Inventor： Tsutomu Shoki , Kazuhiro Hamamoto , Yohei Ikebe
Abstract: A method of manufacturing a reflective mask blank comprising a multilayer reflective film formed on a substrate so as to reflect EUV light; and a laminated film formed on the multilayer reflective film. The method includes the steps of depositing the multilayer reflective film on the substrate to form a multilayer reflective film formed substrate; carrying out defect inspection for the multilayer reflective film formed substrate; depositing the laminated film on the multilayer reflective film of the multilayer reflective film formed substrate; forming a fiducial mark for an upper portion of the laminated film to thereby form a reflective mask blank comprising the fiducial mark, the fiducial mark serving as a reference for a defect position in defect information; and carrying out defect inspection of the reflective mask blank by using the fiducial mark as a reference.
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公开(公告)号：US11003068B2
公开(公告)日：2021-05-11
申请号：US16490018
申请日：2018-02-20
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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Patent Agency Ranking
公开(公告)号：US10394113B2
公开(公告)日：2019-08-27
申请号：US15539263
申请日：2015-12-15
Applicant: HOYA CORPORATION
Inventor： Kazuhiro Hamamoto , Yohei Ikebe
Abstract: An object of the present invention is to obtain a reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm−1 is not more than 17 nm4.
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公开(公告)号：US12135496B2
公开(公告)日：2024-11-05
申请号：US18526463
申请日：2023-12-01
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: A reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask.
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公开(公告)号：US11892768B2
公开(公告)日：2024-02-06
申请号：US17265990
申请日：2019-08-08
Applicant: HOYA CORPORATION
Inventor： Mizuki Kataoka , Yohei Ikebe
Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.
The reflective mask blank comprises a substrate, a multi-layer reflective film disposed on the substrate, and an absorbent body film disposed on the multi-layer reflective film, and is characterized in that: the absorbent body film includes, in at least a part thereof, at least one element with a high absorption coefficient, chosen from the group consisting of cobalt (Co) and nickel (Ni), and an element that increases the speed of dry etching; the absorbent body film includes a lower-surface region that includes a surface on the substrate side and an upper-surface region that includes a surface on the side opposite the substrate; and the concentration (atomic percentage) of the element with the high absorption coefficient in the upper-surface region is greater than the concentration (atomic percentage) of the element with the high absorption coefficient in the lower-surface region.-
公开(公告)号：US11531264B2
公开(公告)日：2022-12-20
申请号：US17056713
申请日：2019-05-24
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki
Abstract: Provided is a reflective mask blank with which it is possible to further reduce the shadowing effect of a reflective mask, and also possible to form a fine and highly accurate phase-shift pattern. A reflective mask blank having, in the following order on a substrate, a multilayer reflective film and a phase-shift film that shifts the phase of EUV light, said reflective mask blank characterized in that the phase-shift film has a thin film comprising a metal-containing material that contains: ruthenium (Ru); and at least one element from among chromium (Cr), nickel (Ni), (Co), aluminum (Al), silicon (Si), titanium (Ti), vanadium (V), germanium (Ge), niobium (Nb), molybdenum (Mo), tin (Sn), tellurium (Te), hafnium (Hf), tungsten (W), and rhenium (Re).
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公开(公告)号：US11480867B2
公开(公告)日：2022-10-25
申请号：US17227655
申请日：2021-04-12
Applicant: HOYA CORPORATION
Inventor： Yohei Ikebe , Tsutomu Shoki , Takahiro Onoue , Hirofumi Kozakai
Abstract: Provided are a reflective mask blank, having a phase shift film having little dependence of phase difference and reflectance on film thickness, and a reflective mask. The reflective mask blank is characterized in that the phase shift film is composed of a material comprised of an alloy having two or more types of metal so that reflectance of the surface of the phase shift film is more than 3% to not more than 20% and so as to have a phase difference of 170 degrees to 190 degrees, and when a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k>α*n+β is defined as Group A and a group of metal elements that satisfies the refractive index n and the extinction coefficient k of k
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