公开(公告)号：US11892768B2

公开(公告)日：2024-02-06

申请号：US17265990

申请日：2019-08-08

Applicant: HOYA CORPORATION

Inventor： Mizuki Kataoka ,  Yohei Ikebe

IPC: G03F1/24 ,  G03F1/54

CPC classification number: G03F1/24 ,  G03F1/54

Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.
The reflective mask blank comprises a substrate, a multi-layer reflective film disposed on the substrate, and an absorbent body film disposed on the multi-layer reflective film, and is characterized in that: the absorbent body film includes, in at least a part thereof, at least one element with a high absorption coefficient, chosen from the group consisting of cobalt (Co) and nickel (Ni), and an element that increases the speed of dry etching; the absorbent body film includes a lower-surface region that includes a surface on the substrate side and an upper-surface region that includes a surface on the side opposite the substrate; and the concentration (atomic percentage) of the element with the high absorption coefficient in the upper-surface region is greater than the concentration (atomic percentage) of the element with the high absorption coefficient in the lower-surface region.

公开(公告)号：US11237472B2

公开(公告)日：2022-02-01

申请号：US16490010

申请日：2018-03-01

Applicant: HOYA CORPORATION

Inventor： Yohei Ikebe ,  Junichi Horikawa ,  Takahiro Onoue ,  Mizuki Kataoka

IPC: G03F1/24 ,  G03F1/54 ,  G03F7/20

Abstract: Provided are a reflective mask blank and a reflective mask, which are able to reduce the shadowing effects of EUV lithography and form a fine pattern. As a result, a semiconductor device can be stably manufactured with high transfer accuracy. The reflective mask blank comprises a multilayer reflective film and an absorber film in that order on a substrate, and the absorber film comprises a material comprising an amorphous metal comprising at least one or more elements among cobalt (Co) and nickel (Ni).