公开(公告)号：US20130034970A1

公开(公告)日：2013-02-07

申请号：US13196052

申请日：2011-08-02

Applicant: Hiroyuki Takaba

Inventor： Hiroyuki Takaba

IPC: H01L21/263

CPC classification number: C23C16/26 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/511 ,  C23C16/517 ,  H01L21/0212 ,  H01L21/02274

Abstract: A method for forming a fluorocarbon layer using a plasma reaction process includes the step of applying a microwave power and an RF bias. The microwave power and the RF bias are applied under a pressure ranging from 20 mTorr to 60 mTorr.

Abstract translation: 使用等离子体反应方法形成碳氟化合物层的方法包括施加微波功率和RF偏压的步骤。 在20mTorr至60mTorr的压力下施加微波功率和RF偏压。

公开(公告)号：US20120098147A1

公开(公告)日：2012-04-26

申请号：US13380843

申请日：2010-06-25

Applicant: Hiroyuki Takaba

Inventor： Hiroyuki Takaba

IPC: H01L21/312 ,  H01L23/58

CPC classification number: H01J37/32192 ,  B05D1/62 ,  B05D5/083 ,  B05D7/52 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/45563 ,  H01J37/32091 ,  H01L21/0212 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/3127

Abstract: A method for manufacturing a semiconductor device having fluorocarbon layers as insulating layers includes the steps of forming a first fluorocarbon (CFx1) layer using plasma excited by microwave power and forming a second fluorocarbon (CFx2) layer using plasma excited by an RF power.

Abstract translation: 制造具有氟碳层作为绝缘层的半导体器件的方法包括以下步骤：使用由微波功率激发的等离子体形成第一氟碳化合物（CFx1）层，并使用由RF功率激发的等离子体形成第二氟碳化合物（CFx2）层。

公开(公告)号：US07820503B2

公开(公告)日：2010-10-26

申请号：US12219897

申请日：2008-07-30

Applicant: Toshihide Nabatame ,  Masaru Kadoshima ,  Hiroyuki Takaba

Inventor： Toshihide Nabatame ,  Masaru Kadoshima ,  Hiroyuki Takaba

IPC: H01L21/8238

CPC classification number: H01L21/823842 ,  H01L21/28185 ,  H01L29/6659 ,  H01L29/7833

Abstract: An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its achievement, gate electrodes of each of the n channel MIS transistor and the p channel MIS transistor are simultaneously formed by patterning ruthenium film deposited on a gate insulator. Next, by introducing oxygen into each of the gate electrodes, the gate electrodes are transformed into those having high work function. Thereafter, by selectively reducing the gate electrode of the n channel MIS transistor, it is transformed into a gate electrode having low work function.

Abstract translation: 本发明的一个目的是简化n沟道MIS晶体管和具有由金属材料形成的栅电极的p沟道MIS晶体管的制造工艺。 为了实现，通过图案化沉积在栅极绝缘体上的钌膜，同时形成n沟道MIS晶体管和p沟道MIS晶体管中的每一个的栅电极。 接下来，通过将氧气引入每个栅电极，将栅电极转变为具有高功函数的栅电极。 此后，通过选择性地还原n沟道MIS晶体管的栅电极，将其转换成具有低功函数的栅电极。

公开(公告)号：US20070096157A1

公开(公告)日：2007-05-03

申请号：US11515797

申请日：2006-09-06

Applicant: Toshihide Nabatame ,  Masaru Kadoshima ,  Hiroyuki Takaba

Inventor： Toshihide Nabatame ,  Masaru Kadoshima ,  Hiroyuki Takaba

IPC: H01L29/76 ,  H01L29/745

CPC classification number: H01L21/823842 ,  H01L21/28185 ,  H01L29/6659 ,  H01L29/7833

Abstract: An object of the present invention is to simplify manufacturing process of an n channel MIS transistor and a p channel MIS transistor with gate electrodes formed of a metal material. For its achievement, gate electrodes of each of the n channel MIS transistor and the p channel MIS transistor are simultaneously formed by patterning ruthenium film deposited on a gate insulator. Next, by introducing oxygen into each of the gate electrodes, the gate electrodes are transformed into those having high work function. Thereafter, by selectively reducing the gate electrode of the n channel MIS transistor, it is transformed into a gate electrode having low work function.

Abstract translation: 本发明的一个目的是简化n沟道MIS晶体管和具有由金属材料形成的栅电极的p沟道MIS晶体管的制造工艺。 为了实现，通过图案化沉积在栅极绝缘体上的钌膜，同时形成n沟道MIS晶体管和p沟道MIS晶体管中的每一个的栅电极。 接下来，通过将氧气引入每个栅电极，将栅电极转变为具有高功函数的栅电极。 此后，通过选择性地还原n沟道MIS晶体管的栅电极，将其转换成具有低功函数的栅电极。