公开(公告)号：US20130140632A1

公开(公告)日：2013-06-06

申请号：US13707386

申请日：2012-12-06

Applicant: Infineon Technologies AG

Inventor： Erhard Landgraf ,  Thomas Bertrams ,  Claus Dahl ,  Henning Feick ,  Andreas Pribil

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/7816 ,  H01L21/02107 ,  H01L21/0334 ,  H01L21/266 ,  H01L29/0649 ,  H01L29/0692 ,  H01L29/0847 ,  H01L29/0882 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/402 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/4933 ,  H01L29/66325 ,  H01L29/665 ,  H01L29/66659 ,  H01L29/66681 ,  H01L29/7393 ,  H01L29/7835

Abstract: A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in in a region near the body zone and a second thickness in a region near the drift zone.

Abstract translation: 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。

公开(公告)号：US11815414B2

公开(公告)日：2023-11-14

申请号：US17348940

申请日：2021-06-16

Applicant: Infineon Technologies AG

Inventor： Emanuel Stoicescu ,  Matthias Boehm ,  Stefan Jahn ,  Erhard Landgraf ,  Michael Weber ,  Janis Weidenauer

IPC: G01L19/14 ,  H01L23/053 ,  G01L19/00 ,  H01L21/56 ,  H01L23/24 ,  H01L23/495 ,  H01L23/60 ,  H01L23/00

CPC classification number: G01L19/147 ,  G01L19/0061 ,  H01L21/56 ,  H01L23/053 ,  H01L23/24 ,  H01L23/49548 ,  H01L23/49575 ,  H01L23/60 ,  H01L24/45 ,  H01L2224/4813 ,  H01L2224/4848 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/00014 ,  H01L2224/48465 ,  H01L2224/48247 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2924/00014

Abstract: A pressure sensor device includes a semiconductor die having a die surface that includes a pressure sensitive area; and a bond wire bonded to a first peripheral region of the die surface and extends over the die surface to a second peripheral region of the die surface, wherein the pressure sensitive area is interposed between the second peripheral region and the first peripheral region, wherein the bond wire comprises a crossing portion that overlaps an area of the die surface, and wherein the crossing portion extends over the pressure sensitive area that is interposed between the first and the second peripheral regions.