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公开(公告)号：US20150303254A1
公开(公告)日：2015-10-22
申请号：US14258073
申请日：2014-04-22
Applicant: Infineon Technologies AG
Inventor： Dmitri Alex Tschumakow , Erhard Landgraf , Claus Dahl , Steffen Rothenhaeusser
IPC: H01L29/06 , H01L21/8234 , H01L29/49 , H01L27/088 , H01L29/10
CPC classification number: H01L29/0649 , H01L21/823412 , H01L21/823481 , H01L27/088 , H01L29/0653 , H01L29/1095 , H01L29/42376 , H01L29/4916 , H01L29/4983 , H01L29/78
Abstract: According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed between the first source/drain region and the second source/drain region, the body region including a core region and at least one edge region at least partially surrounding the core region; a dielectric region next to the body region and configured to limit a current flow through the body region in a width direction of the body region, wherein the at least one edge region is arranged between the core region and the dielectric region; and a gate structure configured to control the body region; wherein the gate structure is configured to provide a first threshold voltage for the core region of the body region and a second threshold voltage for the at least one edge region of the body region, wherein the first threshold voltage is less than or equal to the second threshold voltage.
Abstract translation: 根据各种实施例，半导体结构可以包括：第一源极/漏极区域和第二源极/漏极区域; 设置在所述第一源极/漏极区域和所述第二源极/漏极区域之间的主体区域，所述主体区域包括芯区域和至少部分围绕所述芯部区域的至少一个边缘区域; 所述电介质区域位于所述主体区域的旁边，并且被配置为限制在所述身体区域的宽度方向上通过所述主体区域的电流，其中，所述至少一个边缘区域布置在所述芯区域和所述电介质区域之间; 以及门结构，其构造成控制所述身体区域; 其中所述栅极结构被配置为为所述体区的核心区域提供第一阈值电压，以及为所述身体区域的所述至少一个边缘区域提供第二阈值电压，其中所述第一阈值电压小于或等于所述第二阈值电压 阈值电压。
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公开(公告)号：US09166039B2
公开(公告)日：2015-10-20
申请号：US14321302
申请日：2014-07-01
Applicant: Infineon Technologies AG
Inventor： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
IPC: H01L29/78 , H01L21/02 , H01L29/66 , H01L21/033 , H01L21/266 , H01L29/40 , H01L29/423 , H01L29/739 , H01L29/10 , H01L29/45 , H01L29/49 , H01L29/06 , H01L29/08
CPC classification number: H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
Abstract: A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.
Abstract translation: 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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公开(公告)号：US11067466B2
公开(公告)日：2021-07-20
申请号：US16159918
申请日：2018-10-15
Applicant: Infineon Technologies AG
Inventor： Emanuel Stoicescu , Matthias Boehm , Stefan Jahn , Erhard Landgraf , Michael Weber , Janis Weidenauer
IPC: G01L19/14 , H01L23/053 , G01L19/00 , H01L21/56 , H01L23/24 , H01L23/495 , H01L23/60 , H01L23/00
Abstract: A pressure sensor device includes a semiconductor die of the pressure sensor device and a bond wire of the pressure sensor device. A maximal vertical distance between a part of the bond wire and the semiconductor die is larger than a minimal vertical distance between the semiconductor die and a surface of a gel covering the semiconductor die.
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公开(公告)号：US08809952B2
公开(公告)日：2014-08-19
申请号：US13707386
申请日：2012-12-06
Applicant: Infineon Technologies AG
Inventor： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
IPC: H01L29/78 , H01L21/3065
CPC classification number: H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
Abstract: A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.
Abstract translation: 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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公开(公告)号：US12204724B2
公开(公告)日：2025-01-21
申请号：US18164152
申请日：2023-02-03
Applicant: Infineon Technologies AG
Inventor： Emanuel Stoicescu , Erhard Landgraf
Abstract: An ultrasonic touch sensor includes a touch structure configured to receive a touch; a transmitter arrangement configured to transmit one or more ultrasonic transmit waves toward the touch structure; a receiver arrangement configured to receive ultrasonic reflected waves produced by reflections of the one or more ultrasonic transmit waves and generate a plurality of measurement signals representative of the ultrasonic reflected waves; and a measurement circuit configured to measure a degree of variation of a plurality of measurement signals, compare the degree of variation with a detection threshold, and determine whether a no-touch event or a touch event has occurred at the touch structure based on whether the degree of variation satisfies the detection threshold.
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Patent Agency Ranking
公开(公告)号：US09679963B2
公开(公告)日：2017-06-13
申请号：US14969023
申请日：2015-12-15
Applicant: Infineon Technologies AG
Inventor： Dmitri Alex Tschumakow , Erhard Landgraf , Claus Dahl , Steffen Rothenhaeusser
IPC: H01L29/66 , H01L29/06 , H01L27/088 , H01L29/10 , H01L29/49 , H01L21/8234 , H01L29/423
CPC classification number: H01L29/0649 , H01L21/823412 , H01L21/823481 , H01L27/088 , H01L29/0653 , H01L29/1095 , H01L29/42376 , H01L29/4916 , H01L29/4983 , H01L29/78
Abstract: According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed between the first source/drain region and the second source/drain region, the body region including a core region and at least one edge region at least partially surrounding the core region; a dielectric region next to the body region and configured to limit a current flow through the body region in a width direction of the body region, wherein the at least one edge region is arranged between the core region and the dielectric region; and a gate structure configured to control the body region; wherein the gate structure is configured to provide a first threshold voltage for the core region of the body region and a second threshold voltage for the at least one edge region of the body region, wherein the first threshold voltage is less than or equal to the second threshold voltage.
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公开(公告)号：US09219117B2
公开(公告)日：2015-12-22
申请号：US14258073
申请日：2014-04-22
Applicant: Infineon Technologies AG
Inventor： Dmitri Alex Tschumakow , Erhard Landgraf , Claus Dahl , Steffen Rothenhaeusser
IPC: H01L29/66 , H01L29/06 , H01L27/088 , H01L29/10 , H01L29/49 , H01L21/8234
CPC classification number: H01L29/0649 , H01L21/823412 , H01L21/823481 , H01L27/088 , H01L29/0653 , H01L29/1095 , H01L29/42376 , H01L29/4916 , H01L29/4983 , H01L29/78
Abstract: According to various embodiments, a semiconductor structure may include: a first source/drain region and a second source/drain region; a body region disposed between the first source/drain region and the second source/drain region, the body region including a core region and at least one edge region at least partially surrounding the core region; a dielectric region next to the body region and configured to limit a current flow through the body region in a width direction of the body region, wherein the at least one edge region is arranged between the core region and the dielectric region; and a gate structure configured to control the body region; wherein the gate structure is configured to provide a first threshold voltage for the core region of the body region and a second threshold voltage for the at least one edge region of the body region, wherein the first threshold voltage is less than or equal to the second threshold voltage.
Abstract translation: 根据各种实施例，半导体结构可以包括：第一源极/漏极区域和第二源极/漏极区域; 设置在所述第一源极/漏极区域和所述第二源极/漏极区域之间的主体区域，所述主体区域包括芯区域和至少部分围绕所述芯部区域的至少一个边缘区域; 所述电介质区域位于所述主体区域的旁边，并且被配置为限制在所述身体区域的宽度方向上通过所述主体区域的电流，其中，所述至少一个边缘区域布置在所述芯区域和所述电介质区域之间; 以及门结构，其构造成控制所述身体区域; 其中所述栅极结构被配置为为所述体区的核心区域提供第一阈值电压，以及为所述身体区域的所述至少一个边缘区域提供第二阈值电压，其中所述第一阈值电压小于或等于所述第二阈值电压 阈值电压。
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公开(公告)号：US11698701B1
公开(公告)日：2023-07-11
申请号：US17702182
申请日：2022-03-23
Applicant: Infineon Technologies AG
Inventor： Emanuel Stoicescu , Erhard Landgraf
CPC classification number: G06F3/0436 , G06F3/0416
Abstract: A touch sensor includes a touch structure arranged over an ultrasound port; an array of transceiver transducers arranged inside the ultrasound port and configured to generate a main directivity lobe directed at a touch interface, receive an ultra-sonic reflected wave produced at least in part by internal reflection of the main directivity lobe at the touch interface, and convert the ultra-sonic reflected wave into at least one measurement signal; a controller configured to modulate a directivity characteristic of the main directivity lobe by selectively activating the transmit transducers; and a receiver circuit configured to determine a size of a contact patch of a touch event present at the touch interface based on the at least one measurement signal and the directivity characteristic of the main directivity lobe, and determine an amount of contact force applied during the touch event based on the size of the contact patch.
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公开(公告)号：US11506560B2
公开(公告)日：2022-11-22
申请号：US16271090
申请日：2019-02-08
Applicant: Infineon Technologies AG
Inventor： Victor Popescu-Stroe , Emanuel Stoicescu , Matthias Boehm , Constantin Crisu , Uwe Fakesch , Stefan Jahn , Erhard Landgraf , Janis Weidenauer , Bernhard Winkler
Abstract: Examples provide for an apparatus, method, and computer program for comparing the output of sensor cells in an arrangement of sensor cells in an area A, including a set of at least two measurement units. A measurement unit includes at least two sensor cells, wherein at least one sensor cell of at least one measurement unit includes a sensitive sensor cell, which is sensitive with respect to a measured quantity. The sensor cells are intermixed with each other. The apparatus further includes means for selecting output signals of sensor cells of the arrangement and means for determining a measured quantity or determining an intact sensor cell by comparing output signals of different measurement units.
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公开(公告)号：US20140339634A1
公开(公告)日：2014-11-20
申请号：US14321302
申请日：2014-07-01
Applicant: Infineon Technologies AG
Inventor： Erhard Landgraf , Thomas Bertrams , Claus Dahl , Henning Feick , Andreas Pribil
CPC classification number: H01L29/7816 , H01L21/02107 , H01L21/0334 , H01L21/266 , H01L29/0649 , H01L29/0692 , H01L29/0847 , H01L29/0882 , H01L29/1095 , H01L29/401 , H01L29/402 , H01L29/42368 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66325 , H01L29/665 , H01L29/66659 , H01L29/66681 , H01L29/7393 , H01L29/7835
Abstract: A transistor component includes an active transistor region arranged in the semiconductor body. And insulation region surrounds the active transistor region in the semiconductor body in a ring-shaped manner. A source zone, a drain zone, a body zone and a drift zone are disposed in the active transistor region. The source zone and the drain zone are spaced apart in a lateral direction of the semiconductor body and the body zone is arranged between the source zone and the drift zone and the drift zone is arranged between the body zone and the drain zone. A gate and field electrode is arranged over the active transistor region. The dielectric layer has a first thickness in a region near the body zone and a second thickness in a region near the drift zone.
Abstract translation: 晶体管组件包括布置在半导体本体中的有源晶体管区域。 并且绝缘区域以环形方式围绕半导体主体中的有源晶体管区域。 源极区，漏极区，体区和漂移区设置在有源晶体管区域中。 源极区域和漏极区域在半导体主体的横向方向上间隔开，并且主体区域布置在源极区域和漂移区域之间，并且漂移区域布置在体区域和排出区域之间。 栅极和场电极布置在有源晶体管区域的上方。 电介质层在体区附近具有第一厚度，在漂移区附近的区域具有第二厚度。
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