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公开(公告)号：US10560771B2
公开(公告)日：2020-02-11
申请号：US16052261
申请日：2018-08-01
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Gerhard Metzger-Brueckl , Johann Strasser , Arnaud Walther , Andreas Wiesbauer
Abstract: In accordance with an embodiment, microelectromechanical microphone includes a holder and a sound detection unit carried on the holder. The sound detection unit includes a planar first membrane, a planar second membrane arranged at a distance from the first membrane, a low-pressure chamber formed between the first membrane and the second membrane, a reduced gas pressure relative to normal pressure being present in the low-pressure chamber, a reference electrode arranged at least in sections in the low-pressure chamber, where the first and second membranes are displaceable relative to the reference electrode by sound waves to be detected, the reference electrode includes a planar base section and a stiffening structure provided on the base section, and the stiffening structure is provided on a side of the base section that faces the first membrane or/and on a side of the base section that faces the second membrane.
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12.发明申请公开(公告)号：US20180146512A1
公开(公告)日：2018-05-24
申请号：US15818835
申请日：2017-11-21
Applicant: Infineon Technologies AG
Inventor： Stephan Pindl , Daniel Porwol , Johann Strasser
Abstract: A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. The carrier includes at least one infrared emitter structure at a first side of the carrier and at least one cutout at a second side of the carrier, said second side being situated opposite the first side of the carrier, wherein the at least one cutout extends from the second side of the carrier in the direction of the at least one infrared emitter structure. The method further includes securing an infrared filter layer structure at the second side of the carrier in such a way that the at least one cutout separates the at least one infrared emitter structure from the infrared filter layer structure.
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公开(公告)号：US08932476B2
公开(公告)日：2015-01-13
申请号：US13762117
申请日：2013-02-07
Applicant: Infineon Technologies AG
Inventor： Thomas Kunstmann , Stefan Willkofer , Anja Gissibl , Johann Strasser , Matthias Mueller , Eva-Maria Hess
CPC classification number: C23F1/02 , C23F1/08 , C23F1/18 , H01L21/32134 , H01L23/53228 , H01L2924/0002 , H01L2924/00
Abstract: Apparatuses and methods are provided where porous metal is deposited on a substrate, a mask is provided on the porous metal and then an etching is performed.
Abstract translation: 提供了将多孔金属沉积在基底上的设备和方法，在多孔金属上提供掩模，然后进行蚀刻。
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公开(公告)号：US20210044905A1
公开(公告)日：2021-02-11
申请号：US16537308
申请日：2019-08-09
Applicant: Infineon Technologies AG
Inventor： Arnaud Walther , Stefan Barzen , Wolfgang Klein , Johann Strasser
Abstract: A micro electrical mechanical systems (MEMS) device includes a flexible membrane disposed over a substrate, and a first backplate disposed over the flexible membrane. The first backplate includes a first plurality of bumps facing the flexible membrane. The MEMS device further includes a plurality of features disposed at the flexible membrane, where each of the plurality of features being associated with a corresponding one of the first plurality of bumps.
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15.发明申请公开(公告)号：US20190112182A1
公开(公告)日：2019-04-18
申请号：US16162026
申请日：2018-10-16
Applicant: Infineon Technologies AG
Inventor： Gerhard Metzger-Brueckl , Alfons Dehe , Uwe Hoeckele , Johann Strasser , Arnaud Walther
Abstract: A method for sealing an access opening to a cavity comprises the following steps: providing a layer arrangement having a first layer structure and a cavity arranged adjacent to the first layer structure, wherein the first layer structure has an access opening to the cavity, performing a CVD layer deposition for forming a first covering layer having a layer thickness on the first layer structure having the access opening, and performing an HDP layer deposition with a first and second substep for forming a second covering layer on the first covering layer, wherein the first substep comprises depositing a liner material layer on the first covering layer, wherein the second substep comprises partly backsputtering the liner material layer and furthermore the first covering layer in the region of the access opening, and wherein the first and second substeps are carried out alternately and repeatedly a number of times.
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Patent Agency Ranking
公开(公告)号：US20190084827A1
公开(公告)日：2019-03-21
申请号：US16134355
申请日：2018-09-18
Applicant: Infineon Technologies AG
Inventor： Alfons Dehe , Ulrich Krumbein , Gerhard Metzger-Brueckl , Johann Strasser , Juergen Wagner , Arnaud Walther
CPC classification number: B81B7/02 , B81B2201/0257 , B81B2203/0127 , B81B2203/04 , H04R1/2807 , H04R19/005 , H04R19/04
Abstract: In accordance with an embodiment, a MEMS microphone includes a sound detection unit having a first membrane, a second membrane arranged at a distance from the first membrane, a low-pressure region arranged between the first membrane and the second membrane, a gas pressure that is reduced in relation to normal pressure being present in said low-pressure region, a counter electrode arranged in the low-pressure region, and a sound through-hole, which extends through the sound detection unit in a thickness direction of the sound detection unit; and a valve provided at the sound through-hole, said valve being configured to adopt a plurality of valve states, wherein a predetermined degree of transmission of the sound through-hole to sound is assigned to each valve state
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公开(公告)号：US20180099867A1
公开(公告)日：2018-04-12
申请号：US15819767
申请日：2017-11-21
Applicant: Infineon Technologies AG
Inventor： Arnaud Walther , Alfons Dehe , Johann Strasser , Gerhard Metzger-Brueckl
CPC classification number: B81B3/0086 , B81B2201/0257 , B81B2203/0127 , H04R19/005 , H04R19/04 , H04R31/006 , H04R2201/003
Abstract: In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.
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公开(公告)号：US09828237B2
公开(公告)日：2017-11-28
申请号：US15066741
申请日：2016-03-10
Applicant: Infineon Technologies AG
Inventor： Arnaud Walther , Alfons Dehe , Johann Strasser , Gerhard Metzger-Brueckl
CPC classification number: B81B3/0086 , B81B2201/0257 , B81B2203/0127 , H04R19/005 , H04R19/04 , H04R31/006 , H04R2201/003
Abstract: In accordance with an embodiment, a MEMS device includes a first membrane element, a second membrane element spaced apart from the first membrane element, a low pressure region between the first and second membrane elements, the low pressure region having a pressure less than an ambient pressure, and a counter electrode structure comprising a conductive layer, which is at least partially arranged in the low pressure region or extends in the low pressure region. The conductive layer includes a segmentation providing an electrical isolation between a first portion of the conductive layer and a second portion of the conductive layer.
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公开(公告)号：US11470426B2
公开(公告)日：2022-10-11
申请号：US16537308
申请日：2019-08-09
Applicant: Infineon Technologies AG
Inventor： Arnaud Walther , Stefan Barzen , Wolfgang Klein , Johann Strasser
Abstract: A micro electrical mechanical systems (MEMS) device includes a flexible membrane disposed over a substrate, and a first backplate disposed over the flexible membrane. The first backplate includes a first plurality of bumps facing the flexible membrane. The MEMS device further includes a plurality of features disposed at the flexible membrane, where each of the plurality of features being associated with a corresponding one of the first plurality of bumps.
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20.发明授权公开(公告)号：US11161735B2
公开(公告)日：2021-11-02
申请号：US16850560
申请日：2020-04-16
Applicant: Infineon Technologies AG
Inventor： Johann Strasser , Alfons Dehe , Gerhard Metzger-Brueckl , Juergen Wagner , Arnaud Walther
Abstract: A production method for a double-membrane MEMS component includes: providing a layer arrangement on a carrier substrate, wherein the layer arrangement comprises a first membrane structure, a sacrificial material layer adjoining the first membrane structure, and a counterelectrode structure in the sacrificial material layer and at a distance from the first membrane structure, wherein at least one through opening is formed in the sacrificial material layer as far as the first membrane structure; forming a filling material structure in the at least one through opening by applying a first filling material layer on the wall region of the at least one through opening; applying a second membrane structure on the layer arrangement with the sacrificial material; and removing the sacrificial material from an intermediate region to expose the filling material structure in the intermediate region.
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