公开(公告)号：US12107130B2

公开(公告)日：2024-10-01

申请号：US17235989

申请日：2021-04-21

Applicant: Infineon Technologies AG

Inventor： Ingo Muri ,  Johannes Konrad Baumgartl ,  Oliver Hellmund ,  Jacob Tillmann Ludwig ,  Iris Moder ,  Thomas Neidhart ,  Gerhard Schmidt ,  Hans-Joachim Schulze

IPC: H01L29/36 ,  H01L21/02 ,  H01L21/223 ,  H01L21/225 ,  H01L21/265 ,  H01L29/167

CPC classification number: H01L29/36 ,  H01L21/02236 ,  H01L21/02381 ,  H01L21/2236 ,  H01L21/2253 ,  H01L21/26513 ,  H01L29/167

Abstract: A semiconductor device includes a semiconductor substrate having a first dopant and a second dopant. A covalent atomic radius of a material of the semiconductor substrate is i) larger than a covalent atomic radius of the first dopant and smaller than a covalent atomic radius of the second dopant, or ii) smaller than the covalent atomic radius of the first dopant and larger than the covalent atomic radius of the second dopant. The semiconductor device further includes a semiconductor layer on the semiconductor substrate and semiconductor device elements in the semiconductor layer. A vertical concentration profile of the first dopant decreases along at least 80% of a distance between an interface of the semiconductor substrate and the semiconductor layer to a surface of the semiconductor substrate opposite to the interface.

公开(公告)号：US09903816B2

公开(公告)日：2018-02-27

申请号：US14557584

申请日：2014-12-02

Applicant: Infineon Technologies AG

Inventor： Jonathan Silvano de Sousa ,  Thomas Grille ,  Ursula Hedenig ,  Thomas Neidhart ,  Peter Irsigler ,  Vijaye Kumar Rajaraman

IPC: G01N21/59 ,  G01N21/3504 ,  G01L7/08 ,  G02B6/12 ,  G02B6/125 ,  G01K11/00

CPC classification number: G01N21/59 ,  G01K11/00 ,  G01L7/086 ,  G01N21/3504 ,  G01N2201/062 ,  G02B6/12004 ,  G02B6/125 ,  G02B2006/12166

Abstract: A sensor and methods of making a sensor are disclosed. The sensor may include a substrate, an optical source, an optical detector, a plurality of optical cavities in the substrate or in a layer structure over the substrate, where the plurality of optical cavities may be arranged in an optical path between the optical source and the optical detector, and a processing circuit coupled to the optical detector and configured to receive a signal representing an optical signal received by the optical detector.

公开(公告)号：US09698247B2

公开(公告)日：2017-07-04

申请号：US15071962

申请日：2016-03-16

Applicant: Infineon Technologies AG

Inventor： Hans-Joachim Schulze ,  Manfred Kotek ,  Johannes Baumgartl ,  Markus Harfmann ,  Christian Krenn ,  Thomas Neidhart

IPC: H01L21/20 ,  H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/161 ,  H01L29/167 ,  H01L29/207 ,  H01L21/225 ,  H01L21/683 ,  H01L29/10 ,  H01L21/324 ,  H01L29/08 ,  H01L29/16 ,  H01L29/20

CPC classification number: H01L29/7802 ,  H01L21/2251 ,  H01L21/3247 ,  H01L21/6835 ,  H01L29/0634 ,  H01L29/0873 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/167 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66712 ,  H01L2221/68345

Abstract: A semiconductor arrangement is produced by providing a semiconductor carrier of a second conduction type and epitaxially growing a first semiconductor zone of a first conduction type on the carrier. The first semiconductor zone includes a semiconductor base material doped with first and second dopants which are made of different substances which are both different from the semiconductor base material. The first dopant is electrically active and causes a doping of the first conduction type in the semiconductor base material, and causes a decrease or an increase of a lattice constant of the first semiconductor zone. The second dopant causes one or both of hardening of the first semiconductor zone and an increase of the lattice constant of the first semiconductor zone if the first dopant causes a decrease, or a decrease of the lattice constant of the first semiconductor zone if the first dopant causes an increase.

公开(公告)号：US20150362672A1

公开(公告)日：2015-12-17

申请号：US14303862

申请日：2014-06-13

Applicant: Infineon Technologies AG

Inventor： Ventsislav Lavchiev ,  Bernhard Jakoby ,  Ursula Hedenig ,  Thomas Grille ,  Peter Irsigler ,  Thomas Neidhart ,  Thomas Krotscheck Ostermann

IPC: G02B6/10 ,  G01N21/59

CPC classification number: G02B6/102 ,  G01N21/552 ,  G01N21/59 ,  G01N21/7746 ,  G01N2021/7783 ,  G02B6/00

Abstract: A sensor system having a multi-pass interaction region is disclosed. The system includes an input region, a multi-pass region, and an output region. The input region is configured to receive emitted light. The multi-pass region is coupled to the input region and is configured to absorb portions of the emitted light according to a specimen proximate the multi-pass region. The output region is coupled to the multi-pass region and is configured to provide interacted light from the multi-pass region.

Abstract translation: 公开了具有多通道相互作用区域的传感器系统。 该系统包括输入区域，多通道区域和输出区域。 输入区域被配置为接收发射的光。 多通道区域耦合到输入区域，并且被配置为根据靠近多遍区域的样本吸收发射光的部分。 输出区域耦合到多遍区域并且被配置为提供来自多遍区域的相互作用的光。

公开(公告)号：US20150294868A1

公开(公告)日：2015-10-15

申请号：US14253519

申请日：2014-04-15

Applicant: Infineon Technologies AG

Inventor： Gerhard Schmidt ,  Josef Riss ,  Thomas Neidhart

IPC: H01L21/225 ,  H01L29/167 ,  H01L29/36 ,  H01L21/322

CPC classification number: H01L29/36 ,  H01L21/26506 ,  H01L21/3225

Abstract: Chalcogen atoms are implanted into a single crystalline semiconductor substrate. At a density of interstitial oxygen of at least 5E16 cm−3 thermal donors containing oxygen are generated at crystal defects in the semiconductor substrate. Then the semiconductor substrate is heated up to a temperature above a deactivation temperature at which the thermal donors become inactive, wherein a portion of electrically active chalcogen atoms is increased.

Abstract translation: 将硫族原子注入单晶半导体衬底中。 在至少5E16cm-3的间隙氧的密度下，在半导体衬底中的晶体缺陷处产生含有氧的热供体。 然后将半导体衬底加热到​​高于失活温度的温度，在此温度下，供体不活跃，其中一部分电活性硫属原子增加。