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公开(公告)号：US20170268991A1
公开(公告)日：2017-09-21
申请号：US15617246
申请日：2017-06-08
Applicant: Infineon Technologies AG
Inventor： Ventsislav Lavchiev , Thomas Grille , Ursula Hedenig , Bernhard Jakoby
CPC classification number: G01N21/27 , G01N21/0303 , G01N21/7703 , G01N2021/0382 , G01N2201/08
Abstract: A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. The input coupling structure is configured to receive emitted light at a selected coupling efficiency and may provide filtering of the emitted light for a selected wavelength. The interaction region is coupled to the input coupling structure and configured to interact the light from the input coupling structure with a specimen. The output coupling structure is coupled to the interaction region and configured to provide interacted light from the interaction region to the detector.
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公开(公告)号：US11322911B2
公开(公告)日：2022-05-03
申请号：US16797522
申请日：2020-02-21
Applicant: Infineon Technologies AG
Inventor： Banafsheh Abasahl , Cristina Consani , Thomas Grille , Bernhard Jakoby , Reyhaneh Jannesari , Andreas Tortschanoff
IPC: H01S5/22 , G01N21/3504 , G01N29/22
Abstract: An emitter for emitting electromagnetic radiation includes a first region for thermally generating electromagnetic radiation, wherein the first region includes a first photonic crystal of the type having a first periodical structure with first holes having a first dimension and being at a first periodicity, so as to define a first dimension-to-periodicity ratio; and a second region for filtering the electromagnetic radiation generated in the first region, wherein the second region includes a second photonic crystal of the type having a second periodical structure with second holes having a second dimension and being at a second periodicity, so as to define a second dimension-to-periodicity ratio, wherein the second dimension-to-periodicity ratio is different from the first dimension-to-periodicity ratio.
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公开(公告)号：US11067500B2
公开(公告)日：2021-07-20
申请号：US16817874
申请日：2020-03-13
Applicant: Infineon Technologies AG
Inventor： Banafsheh Abasahl , Anisuzzaman Boni , Thomas Grille , Bernhard Jakoby , Reyhaneh Jannesari
IPC: G01N21/3504 , G01N33/00 , G02B1/00
Abstract: Techniques (e.g., implemented in devices, methods and/or in non-transitory storage units) are used for confining wavelengths, e.g., using a pillar photonic crystal. A semiconductor device includes a pillar photonic crystal including a structure and a plurality of pillars extending from the structure in a height direction, wherein the plurality of pillars form at least one waveguide for electromagnetic radiation at a specific wavelength, the at least one waveguide extending in at least one planar direction, wherein the structure includes a confining layer in doped semiconductor material to support propagation of surface plasmon polaritons.
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公开(公告)号：US09941432B2
公开(公告)日：2018-04-10
申请号：US15167292
申请日：2016-05-27
Applicant: Infineon Technologies AG
Inventor： Stefan Clara , Thomas Grille , Ursula Hedenig , Peter Irsigler , Bernhard Jakoby , Ventsislav M. Lavchiev , Thomas Ostermann , Thomas Popp
IPC: H01L31/18 , H01L31/0352 , H01L33/06
CPC classification number: H01L31/035254 , H01L31/035209 , H01L31/035218 , H01L31/173 , H01L31/1812 , H01L31/1864 , H01L33/06 , H01L2933/0033
Abstract: A semiconductor device comprises a plurality of quantum structures comprising predominantly germanium. The plurality of quantum structures are formed on a first semiconductor layer structure. The quantum structures of the plurality of quantum structures have a lateral dimension of less than 15 nm and an area density of at least 8×1011 quantum structures per cm2. The plurality of quantum structures are configured to emit light with a light emission maximum at a wavelength of between 2 μm and 10 μm or to absorb light with a light absorption maximum at a wavelength of between 2 μm and 10 μm.
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公开(公告)号：US20230125167A1
公开(公告)日：2023-04-27
申请号：US18046231
申请日：2022-10-13
Applicant: Infineon Technologies AG
Inventor： Gerald Puehringer , Gerald Stocker , Andreas Tortschanoff , Reyhaneh Jannesari , Clement Fleury , Thomas Grille , Bernhard Jakoby , Cristina Consani
Abstract: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.
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Patent Agency Ranking
公开(公告)号：US20200319095A1
公开(公告)日：2020-10-08
申请号：US16817874
申请日：2020-03-13
Applicant: Infineon Technologies AG
Inventor： Banafsheh Abasahl , Anisuzzaman Boni , Thomas Grille , Bernhard Jakoby , Reyhaneh Jannesari
IPC: G01N21/3504 , G02B1/00 , G01N33/00
Abstract: Techniques (e.g., implemented in devices, methods and/or in non-transitory storage units) are used for confining wavelengths, e.g., using a pillar photonic crystal. A semiconductor device includes a pillar photonic crystal including a structure and a plurality of pillars extending from the structure in a height direction, wherein the plurality of pillars form at least one waveguide for electromagnetic radiation at a specific wavelength, the at least one waveguide extending in at least one planar direction, wherein the structure includes a confining layer in doped semiconductor material to support propagation of surface plasmon polaritons.
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公开(公告)号：US09702813B2
公开(公告)日：2017-07-11
申请号：US14338390
申请日：2014-07-23
Applicant: Infineon Technologies AG
Inventor： Ventsislav Lavchiev , Thomas Grille , Ursula Hedenig , Bernhard Jakoby
CPC classification number: G01N21/27 , G01N21/0303 , G01N21/7703 , G01N2021/0382 , G01N2201/08
Abstract: A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. The input coupling structure is configured to receive emitted light at a selected coupling efficiency and may provide filtering of the emitted light for a selected wavelength. The interaction region is coupled to the input coupling structure and configured to interact the light from the input coupling structure with a specimen. The output coupling structure is coupled to the interaction region and configured to provide interacted light from the interaction region to the detector.
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公开(公告)号：US09618693B2
公开(公告)日：2017-04-11
申请号：US14303862
申请日：2014-06-13
Applicant: Infineon Technologies AG
Inventor： Ventsislav Lavchiev , Bernhard Jakoby , Ursula Hedenig , Thomas Grille , Peter Irsigler , Thomas Neidhart , Thomas Krotscheck Ostermann
IPC: G01J5/02 , G02B6/10 , G01N21/59 , G01N21/77 , G01N21/552
CPC classification number: G02B6/102 , G01N21/552 , G01N21/59 , G01N21/7746 , G01N2021/7783 , G02B6/00
Abstract: A sensor system having a multi-pass interaction region is disclosed. The system includes an input region, a multi-pass region, and an output region. The input region is configured to receive emitted light. The multi-pass region is coupled to the input region and is configured to absorb portions of the emitted light according to a specimen proximate the multi-pass region. The output region is coupled to the multi-pass region and is configured to provide interacted light from the multi-pass region.
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公开(公告)号：US12050340B2
公开(公告)日：2024-07-30
申请号：US18046231
申请日：2022-10-13
Applicant: Infineon Technologies AG
Inventor： Gerald Puehringer , Gerald Stocker , Andreas Tortschanoff , Reyhaneh Jannesari , Clement Fleury , Thomas Grille , Bernhard Jakoby , Cristina Consani
CPC classification number: G02B6/102 , G02B6/1223 , G02B2006/12104
Abstract: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.
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10.发明授权公开(公告)号：US11506599B2
公开(公告)日：2022-11-22
申请号：US16829364
申请日：2020-03-25
Applicant: Infineon Technologies AG
Inventor： Thomas Grille , Cristina Consani , Peter Irsigler , Bernhard Jakoby , Thomas Krotscheck Ostermann , Gerald Puehringer , Christian Ranacher , Andreas Tortschanoff
IPC: H01L31/0232 , H01L31/0368 , H01L31/16 , H01L31/18 , G01N21/3518 , H01L31/0216
Abstract: A fluid sensor includes a substrate having a top main surface region, wherein the top main surface region of the substrate forms a common system plane of the fluid sensor, a thermal radiation emitter on the top main surface region of the substrate, an optical filter structure on the top main surface region of the substrate, a waveguide on the main top surface region of the substrate, and a thermal radiation detector on the top main surface region of the substrate, wherein the thermal radiation detector provides a detector output signal based on a radiation strength of the filtered thermal radiation received from the waveguide.
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