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公开(公告)号：US20220381753A1
公开(公告)日：2022-12-01
申请号：US17658564
申请日：2022-04-08
Applicant: Infineon Technologies AG
Inventor： Gerald Stocker , Elmar Aschauer , Ulf Bartl , Thomas Grille , Christoph Kovatsch , Thomas Krotscheck Ostermann
Abstract: A fluid sensor includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a thermal radiation detector on the top main surface region of the support structure; and a waveguide structure having a first and a second waveguide section on the top main surface region of the support structure. The first waveguide section guides a first portion of the thermal radiation to the thermal radiation detector and the second waveguide section guides a second portion of the thermal radiation to the thermal radiation detector. The waveguide structure enables an interaction of an evanescence field of the guided first and/or second portion of the thermal radiation with a surrounding fluid.
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公开(公告)号：US11286158B2
公开(公告)日：2022-03-29
申请号：US16287232
申请日：2019-02-27
Applicant: Infineon Technologies AG
Inventor： Christian Ranacher , Banafsheh Abasahl , Cristina Consani , Thomas Grille , Peter Irsigler , Andreas Tortschanoff
Abstract: A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.
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公开(公告)号：US20190270640A1
公开(公告)日：2019-09-05
申请号：US16287232
申请日：2019-02-27
Applicant: Infineon Technologies AG
Inventor： Christian Ranacher , Banafsheh Abasahl , Cristina Consani , Thomas Grille , Peter Irsigler , Andreas Tortschanoff
Abstract: A MEMS component includes a semiconductor substrate stack having a first semiconductor substrate and a second semiconductor substrate, wherein the semiconductor substrate stack has a cavity formed within the first and second semiconductor substrates, and wherein at least the first or the second semiconductor substrate has an access opening for gas exchange between the cavity and an environment. A radiation source is arranged at the first semiconductor substrate, and a radiation detector is arranged at the second semiconductor substrate. Two mutually spaced apart reflection elements are arranged in a beam path between the radiation source and the radiation detector, wherein one reflection element is partly transmissive to the emitted radiation from the cavity in the direction of the radiation detector, and wherein an interspace between the two mutually spaced apart reflection elements has a length that is at least ten times the wavelength of the emitted radiation.
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公开(公告)号：US09939331B2
公开(公告)日：2018-04-10
申请号：US14284198
申请日：2014-05-21
Applicant: Infineon Technologies AG
Inventor： Jonathan Silvano de Sousa , Tobias Frischmuth , Peter Irsigler , Ulrich Schmid , Thomas Grille , Ursula Hedenig , Sylvicley Figueira da Silva
CPC classification number: G01K7/34 , B81B3/0021 , G01K1/024 , G01K13/002
Abstract: Various embodiments disclosed herein include a capacitive thermometer including a deflectable membrane and a sense electrode. The deflectable membrane is configured to adjust a capacitive value based on a temperature of the deflectable membrane.
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公开(公告)号：US20170325025A1
公开(公告)日：2017-11-09
申请号：US15145862
申请日：2016-05-04
Applicant: Infineon Technologies AG
Inventor： Manuel Dorfmeister , Michael Schneider , Manfred Kaltenbacher , Alfons Dehe , Ursula Hedenig , Thomas Grille , Ulrich Schmid
Abstract: Aspects of a microelectromechanical device, an array of microelectromechanical devices, a method of manufacturing a microelectromechanical device, and a method of operating a microelectromechanical device, are discussed herein. The microelectromechanical device may include: a substrate; a diaphragm mechanically coupled to the substrate, the diaphragm comprising a stressed region to buckle the diaphragm into one of two geometrically stable positions; an actuator mechanically coupled to the diaphragm, the actuator comprising a piezoelectric layer over the diaphragm; a controller configured to provide an electrical control signal in response to a digital sound input; wherein the actuator is configured to receive the electrical control signal to exert a mechanical piezoelectric force on the diaphragm via the piezoelectric layer to move the diaphragm to create a sound wave.
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Patent Agency Ranking
公开(公告)号：US20170268991A1
公开(公告)日：2017-09-21
申请号：US15617246
申请日：2017-06-08
Applicant: Infineon Technologies AG
Inventor： Ventsislav Lavchiev , Thomas Grille , Ursula Hedenig , Bernhard Jakoby
CPC classification number: G01N21/27 , G01N21/0303 , G01N21/7703 , G01N2021/0382 , G01N2201/08
Abstract: A sensor system having coupling structures is disclosed. The system includes an input coupling structure, an interaction region, and an output coupling structure. The input coupling structure is configured to receive emitted light at a selected coupling efficiency and may provide filtering of the emitted light for a selected wavelength. The interaction region is coupled to the input coupling structure and configured to interact the light from the input coupling structure with a specimen. The output coupling structure is coupled to the interaction region and configured to provide interacted light from the interaction region to the detector.
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公开(公告)号：US12235170B2
公开(公告)日：2025-02-25
申请号：US17658564
申请日：2022-04-08
Applicant: Infineon Technologies AG
Inventor： Gerald Stocker , Elmar Aschauer , Ulf Bartl , Thomas Grille , Christoph Kovatsch , Thomas Krotscheck Ostermann
IPC: G01N33/00 , G01J5/02 , G01J5/0802 , G01J5/0818 , G01J5/10 , G01K7/01 , G01N21/3504
Abstract: A fluid sensor includes a support structure having a top main surface region; a thermal emitter on the top main surface region of the support structure; a thermal radiation detector on the top main surface region of the support structure; and a waveguide structure having a first and a second waveguide section on the top main surface region of the support structure. The first waveguide section guides a first portion of the thermal radiation to the thermal radiation detector and the second waveguide section guides a second portion of the thermal radiation to the thermal radiation detector. The waveguide structure enables an interaction of an evanescence field of the guided first and/or second portion of the thermal radiation with a surrounding fluid.
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公开(公告)号：US20230125167A1
公开(公告)日：2023-04-27
申请号：US18046231
申请日：2022-10-13
Applicant: Infineon Technologies AG
Inventor： Gerald Puehringer , Gerald Stocker , Andreas Tortschanoff , Reyhaneh Jannesari , Clement Fleury , Thomas Grille , Bernhard Jakoby , Cristina Consani
Abstract: An optical resonator system includes a multi-strip waveguide structure having spaced semiconductor strips for guiding an IR radiation, a STP resonance structure (STP=slab tamm-plasmon-polariton), wherein the STP resonance structure includes an alternating arrangement of semiconductor strips and interjacent dielectric strips and includes a metal strip adjacent to the semiconductor strip at a boundary region of the STP resonance structure, wherein the metal strip and the adjacent semiconductor strip are arranged to provide a metal-semiconductor interface, and wherein the semiconductor strips of the multi-strip waveguide structure and the semiconductor strips of the STP resonance structure are arranged perpendicular to each other, and an optical coupling structure having a semiconductor layer, wherein the semiconductor layer is arranged between the multi-strip waveguide structure and the STP resonance structure for optically coupling the IR radiation between the multi-strip waveguide structure and the STP resonance structure.
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公开(公告)号：US20200319095A1
公开(公告)日：2020-10-08
申请号：US16817874
申请日：2020-03-13
Applicant: Infineon Technologies AG
Inventor： Banafsheh Abasahl , Anisuzzaman Boni , Thomas Grille , Bernhard Jakoby , Reyhaneh Jannesari
IPC: G01N21/3504 , G02B1/00 , G01N33/00
Abstract: Techniques (e.g., implemented in devices, methods and/or in non-transitory storage units) are used for confining wavelengths, e.g., using a pillar photonic crystal. A semiconductor device includes a pillar photonic crystal including a structure and a plurality of pillars extending from the structure in a height direction, wherein the plurality of pillars form at least one waveguide for electromagnetic radiation at a specific wavelength, the at least one waveguide extending in at least one planar direction, wherein the structure includes a confining layer in doped semiconductor material to support propagation of surface plasmon polaritons.
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公开(公告)号：US10710874B2
公开(公告)日：2020-07-14
申请号：US15636702
申请日：2017-06-29
Applicant: Infineon Technologies AG
Inventor： Tobias Frischmuth , Guenter Denifl , Thomas Grille , Ursula Hedenig , Markus Kahn , Daniel Maurer , Ulrich Schmid , Michael Schneider
IPC: H04R19/00 , B81C1/00 , G01Q70/14 , H04R7/26 , G01L7/08 , G01L1/00 , B81B3/00 , G01Q60/24 , H04R19/02 , H04R7/10 , H04R19/04
Abstract: A micromechanical structure in accordance with various embodiments may include: a substrate; and a functional structure arranged at the substrate; wherein the functional structure includes a functional region which is deflectable with respect to the substrate responsive to a force acting on the functional region; and wherein at least a section of the functional region has an elastic modulus in the range from about 5 GPa to about 70 GPa.
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