公开(公告)号：US12148658B2

公开(公告)日：2024-11-19

申请号：US18074525

申请日：2022-12-05

Applicant: InnoLux Corporation

Inventor： Cheng-Chi Wang ,  Yeong-E Chen ,  Cheng-En Cheng

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/288 ,  H01L21/48 ,  H01L21/66 ,  H01L21/683

Abstract: The present disclosure discloses a method for manufacturing an electronic device, including: setting a basic working area; a photoresist coating process; a development process; an etching process; an exposure process; a metal plating process; and a polishing process, wherein the photoresist coating process, the development process, the etching process, the exposure process, the metal plating process and the polishing process respectively have a maximum optimized process area, and a smallest one of the maximum optimized process areas is selected as the basic working area.

公开(公告)号：US12142554B2

公开(公告)日：2024-11-12

申请号：US17523895

申请日：2021-11-10

Applicant: Innolux Corporation

Inventor： Yeong-E Chen ,  Yi-Hung Lin ,  Cheng-En Cheng ,  Wen-Hsiang Liao ,  Cheng-Chi Wang

IPC: H01L23/498 ,  H01L21/48 ,  H01L23/00

Abstract: An electronic component and a manufacturing method thereof are provided. The electronic component includes a structure member and a connecting member. The structure member includes at least one working unit. The at least one working unit is disposed in a first region. The connecting member is disposed on the structure member and includes a second region. The second region is overlapped with the first region, and a metal density of the second region is less than a metal density of the first region. The electronic component and the manufacturing method thereof of the embodiment of the disclosure include the effect of improving the reliability or quality of the electronic component.

公开(公告)号：US11812549B2

公开(公告)日：2023-11-07

申请号：US18094995

申请日：2023-01-10

Applicant: InnoLux Corporation

Inventor： Yeong-E Chen ,  Cheng-En Cheng ,  Yu-Ting Liu

IPC: H05K1/02 ,  H05K3/46 ,  H01L21/56 ,  H01L23/31 ,  H05K3/02

CPC classification number: H05K1/0269 ,  H05K3/022 ,  H05K3/46

Abstract: A package device and a manufacturing method thereof are provided. The package device includes a redistribution layer. The redistribution layer includes a first dielectric layer, a conductive layer, and a second dielectric layer, and the conductive layer is disposed between the first dielectric layer and the second dielectric layer, wherein the redistribution layer has a test mark, the test mark includes a conductive pattern formed of the conductive layer, the conductive pattern includes a center portion and a plurality of extension portions, and the plurality of extension portions are respectively connected to the center portion.

公开(公告)号：US11582865B2

公开(公告)日：2023-02-14

申请号：US17313006

申请日：2021-05-06

Applicant: InnoLux Corporation

Inventor： Yeong-E Chen ,  Cheng-En Cheng ,  Yu-Ting Liu

IPC: H05K3/22 ,  H05K3/24 ,  H05K3/46 ,  H01L21/48 ,  H01L21/56 ,  H01L21/60 ,  H01L21/66 ,  H01L23/31 ,  H01L23/485 ,  H05K1/02 ,  H05K3/02

Abstract: A package device and a manufacturing method thereof are provided. The package device includes a redistribution layer including a first dielectric layer, a conductive layer, and a second dielectric layer. The conductive layer is disposed between the first dielectric layer and the second dielectric layer. The redistribution layer has a test mark, the test mark includes a plurality of conductive patterns formed of the conductive layer, and the conductive patterns are arranged in a ring shape.

公开(公告)号：US20220181189A1

公开(公告)日：2022-06-09

申请号：US17520599

申请日：2021-11-05

Applicant: Innolux Corporation

Inventor： Cheng-Chi Wang ,  Wen-Hsiang Liao ,  Yeong-E Chen ,  Hung-Sheng Chou ,  Cheng-En Cheng

IPC: H01L21/683 ,  H01L21/48

Abstract: A manufacturing method of a semiconductor package is provided. The manufacturing method includes the following. A plurality of semiconductor components are provided. Each semiconductor component has at least one conductive bump. A substrate is provided. The substrate has a plurality of conductive pads. A transfer device is provided. The transfer device transfers the semiconductor components onto the substrate. A heating device is provided. The heating device heats or pressurizes at least two semiconductor components. During transferring of the semiconductor components to the substrate, the at least one conductive bump of each semiconductor component is docked to a corresponding one of the conductive pads.