公开(公告)号：US20200006634A1

公开(公告)日：2020-01-02

申请号：US16024522

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Justin Brockman ,  Conor Puls ,  Stephen Wu ,  Christopher Wiegand ,  Tofizur Rahman ,  Daniel Ouellette ,  Angeline Smith ,  Andrew Smith ,  Pedro Quintero ,  Juan Alzate-Vinasco ,  Oleg Golonzka

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L21/768 ,  G11C11/16 ,  H01L27/22 ,  H01L23/528

Abstract: A memory device method of fabrication that includes a first electrode having a first conductive layer including titanium and nitrogen and a second conductive layer on the first conductive layer that includes tantalum and nitrogen. The memory device further includes a magnetic tunnel junction (MTJ) on the first electrode. In some embodiments, at least a portion of the first conductive layer proximal to an interface with the second conductive layer includes oxygen.

公开(公告)号：US11737368B2

公开(公告)日：2023-08-22

申请号：US16367136

申请日：2019-03-27

Applicant: Intel Corporation

Inventor： Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Angeline Smith ,  Andrew Smith ,  James Pellegren ,  Michael Robinson ,  Huiying Liu

IPC: H10N50/01 ,  H10N50/10 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/01 ,  H10B61/22 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode and a magnetic junction directly on the conductive layer. The magnetic junction further includes a pinning structure above the conductive layer, a fixed magnet above the pinning structure, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier layer and a second electrode above the free magnet. The conductive layer including iridium and the pinning structure including iridium provide switching efficiency.

公开(公告)号：US11063088B2

公开(公告)日：2021-07-13

申请号：US16706470

申请日：2019-12-06

Applicant: Intel Corporation

Inventor： Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Angeline Smith ,  Andrew Smith ,  James Pellegren ,  Aaron Littlejohn ,  Juan G. Alzate-Vinasco ,  Yu-Jin Chen ,  Tanmoy Pramanik

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01F41/32 ,  H01L43/12

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

公开(公告)号：US20210175284A1

公开(公告)日：2021-06-10

申请号：US16706470

申请日：2019-12-06

Applicant: Intel Corporation

Inventor： Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Angeline Smith ,  Andrew Smith ,  James Pellegren ,  Aaron Littlejohn ,  Juan G. Alzate-Vinasco ,  Yu-Jin Chen ,  Tanmoy Pramanik

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01F41/32 ,  H01F10/32

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

公开(公告)号：US20200006635A1

公开(公告)日：2020-01-02

申请号：US16024599

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Tofizur Rahman ,  Christopher J. Wiegand ,  Justin S. Brockman ,  Daniel G. Ouellette ,  Angeline K. Smith ,  Andrew Smith ,  Pedro A. Quintero ,  Juan G. Alzate-Vinasco ,  Oleg Golonzka

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16

Abstract: A memory device includes a perpendicular magnetic tunnel junction (pMTJ) stack, between a bottom electrode and a top electrode. In an embodiment, the pMTJ includes a fixed magnet, a tunnel barrier above the fixed magnet and a free magnet structure on the tunnel barrier. The free magnet structure includes a first free magnet on the tunnel barrier and a second free magnet above the first free magnet, wherein at least a portion of the free magnet proximal to an interface with the free magnet includes a transition metal. The free magnet structure having a transition metal between the first and the second free magnets advantageously improves the switching efficiency of the MTJ, while maintaining a thermal stability of at least 50 kT.

公开(公告)号：US20190386209A1

公开(公告)日：2019-12-19

申请号：US16009776

申请日：2018-06-15

Applicant: Intel Corporation

Inventor： Angeline Smith ,  Justin Brockman ,  Tofizur Rahman ,  Daniel Ouellette ,  Andrew Smith ,  Juan Alzate Vinasco ,  James ODonnell ,  Christopher Wiegand ,  Oleg Golonzka

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12

Abstract: Material stacks for perpendicular spin transfer torque memory (pSTTM) devices, pSTTM devices and computing platforms employing such material stacks, and methods for forming them are discussed. The material stacks include a cladding layer of predominantly tungsten on a protective layer, which is in turn on an oxide capping layer over a magnetic junction stack. The cladding layer reduces oxygen dissociation from the oxide capping layer for improved thermal stability and retention.