Structure to achieve high-Q and low insertion loss film bulk acoustic resonators
    11.
    发明申请
    Structure to achieve high-Q and low insertion loss film bulk acoustic resonators 有权
    结构实现高Q和低插入损耗薄膜体声共振器

    公开(公告)号:US20040104640A1

    公开(公告)日:2004-06-03

    申请号:US10716750

    申请日:2003-11-19

    Abstract: A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.

    Abstract translation: 在基板上形成膜体声波谐振器。 膜体声波谐振器包括具有靠近衬底的第一表面的压电材料层和远离衬底的第二表面。 沉积在压电材料的第一表面上的第一导电层包括具有与与第二部分相关联的表面不同的平面上的表面的第一部分。

    Electrode configuration in a MEMS switch
    12.
    发明申请
    Electrode configuration in a MEMS switch 失效
    MEMS开关中的电极配置

    公开(公告)号:US20040032705A1

    公开(公告)日:2004-02-19

    申请号:US10219013

    申请日:2002-08-14

    Inventor: Qing Ma

    CPC classification number: H01H59/0009

    Abstract: A microelectromechanical system (MEMS) switch that includes a signal contact, an actuation electrode and a beam that engages the signal contact when a voltage is applied to the actuation electrode. The signal contact includes a first portion and a second portion. The actuation electrode is positioned between the first and second portions of the signal contact.

    Abstract translation: 一种微电子机械系统(MEMS)开关,其包括信号触点,致动电极和当电压施加到致动电极时接合信号触点的光束。 信号触点包括第一部分和第二部分。 致动电极位于信号触点的第一和第二部分之间。

    BUCKLING BEAM BI-STABLE MICROELECTROMECHANICAL SWITCH USING ELECTRO-THERMAL ACTUATION
    14.
    发明申请
    BUCKLING BEAM BI-STABLE MICROELECTROMECHANICAL SWITCH USING ELECTRO-THERMAL ACTUATION 有权
    采用电热启动的起重梁双稳态微电子开关

    公开(公告)号:US20040032000A1

    公开(公告)日:2004-02-19

    申请号:US10218290

    申请日:2002-08-14

    Inventor: Qing Ma

    CPC classification number: H01H1/0036 H01H37/5409 H01H2001/0042 H01H2037/008

    Abstract: A microelectromechanical system (MEMS) that includes a first electro-thermal actuator, a second electro-thermal actuator and a beam having a first side and a second side. The first electro-thermal actuator applies a force to the first side of the beam as current passes through the first electro-thermal actuator and the second electro-thermal actuator applies a force to the second side of the beam as current passes through the second electro-thermal actuator.

    Abstract translation: 一种包括第一电热致动器,第二电热致动器和具有第一侧和第二侧的梁的微机电系统(MEMS)。 当电流通过第一电热致动器时,第一电热致动器向梁的第一侧施加力,并且当电流通过第二电热致动器时,第二电热致动器向梁的第二侧施加力 热致动器。

    Film bulk acoustic resonator structure and method of making
    15.
    发明申请
    Film bulk acoustic resonator structure and method of making 失效
    薄膜体声共振器结构及制作方法

    公开(公告)号:US20030112097A1

    公开(公告)日:2003-06-19

    申请号:US10109811

    申请日:2002-03-28

    CPC classification number: H03H9/172 H03H3/02 H03H9/586 Y10T29/42

    Abstract: A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.

    Abstract translation: 在具有主表面的基板上形成膜体声波谐振器。 薄膜体声波谐振器包括细长的叠层。 细长堆叠包括一层位于压电材料层的第一表面上的第一导电层和沉积在该压电材料层的第二表面上的第二导电层之间的压电材料。 细长的堆叠被定位成相对于基底的主表面基本垂直。 第一和第二导电层基本上同时并在一个处理步骤中放置在压电材料层上。 衬底的主表面处于水平面,膜体声波谐振器的堆叠处于基本垂直的平面。 形成的谐振器结构可以用作谐振器或滤波器。

    Fabrication of on-package and on-chip structure using build-up layer process
    16.
    发明申请
    Fabrication of on-package and on-chip structure using build-up layer process 有权
    使用堆积层工艺制造封装和片上结构

    公开(公告)号:US20030077871A1

    公开(公告)日:2003-04-24

    申请号:US10246360

    申请日:2002-09-17

    Inventor: Peng Cheng Qing Ma

    Abstract: The invention relates to a process of forming an on-chip package inductor. The process includes providing a substrate with at least one microelectronic device packaged therewith. As part of the inventive process, electrical communication is formed for the microelectronic device. The electrical communication includes at least two electrically conductive layers. As part of the inventive technology, the inductor is patterned on the substrate before, during, or after formation of the electrical communication. The inductor is connected to the at least one microelectronic device.

    Abstract translation: 本发明涉及一种形成片上封装电感器的工艺。 该方法包括提供具有与其一起封装的至少一个微电子器件的衬底。 作为本发明方法的一部分,为微电子器件形成电通信。 电通信包括至少两个导电层。 作为本发明技术的一部分,电感器在形成电通信之前,期间或之后在衬底上图案化。 电感器连接到至少一个微电子器件。

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