Abstract:
A film bulk acoustic resonator is formed on a substrate. The film bulk acoustic resonator includes a layer of piezoelectric material having a first surface proximate the substrate, and a second surface distal from the substrate. The first conductive layer deposited on the first surface of the piezoelectric material includes a first portion having a surface on a different plane than a surface associated with a second portion.
Abstract:
A microelectromechanical system (MEMS) switch that includes a signal contact, an actuation electrode and a beam that engages the signal contact when a voltage is applied to the actuation electrode. The signal contact includes a first portion and a second portion. The actuation electrode is positioned between the first and second portions of the signal contact.
Abstract:
A microelectromechanical system (MEMS) switch having a high-resonance-frequency beam is disclosed. The MEMS switch includes first and second spaced apart electrical contacts, and an actuating electrode. The beam is adapted to establish contact between the electrodes via electrostatic deflection of the beam as induced by the actuating electrode. The beam may have a cantilever or bridge structure, and may be hollow or otherwise shaped to have a high resonant frequency. Methods of forming the high-speed MEMS switch are also disclosed.
Abstract:
A microelectromechanical system (MEMS) that includes a first electro-thermal actuator, a second electro-thermal actuator and a beam having a first side and a second side. The first electro-thermal actuator applies a force to the first side of the beam as current passes through the first electro-thermal actuator and the second electro-thermal actuator applies a force to the second side of the beam as current passes through the second electro-thermal actuator.
Abstract:
A film bulk acoustic resonator is formed on a substrate having a major surface. The film bulk acoustic resonator includes an elongated stack. The elongated stack includes a layer of piezoelectric material positioned between a first conductive layer deposited on a first surface of the layer of piezoelectric material, and a second conductive layer deposited on a second surface of the layer of piezoelectric material. The elongated stack is positioned substantially perpendicular with respect to the major surface of the substrate. The first and second conductive layers are placed on the layer of piezoelectric material substantially simultaneously and in one processing step. The major surface of the substrate is in a horizontal plane and the stack of the film bulk acoustic resonator is in a substantially vertical plane. The resonator structure formed may be used either as a resonator or a filter.
Abstract:
The invention relates to a process of forming an on-chip package inductor. The process includes providing a substrate with at least one microelectronic device packaged therewith. As part of the inventive process, electrical communication is formed for the microelectronic device. The electrical communication includes at least two electrically conductive layers. As part of the inventive technology, the inductor is patterned on the substrate before, during, or after formation of the electrical communication. The inductor is connected to the at least one microelectronic device.