Abstract:
A method of smoothing teeth by, for instance, filling in cracks, chips and eroded areas by applying calcium and/or casein and/or phosphate and a source of OH− ions thereto. The method optionally provides that very thin layer(s) of dental cement be interlaced with other applied materials, and that the results be maintained in contact with the teeth involved by application of a composition of matter that adheres to said teeth and holds the results in place, while allowing at least some permeation of saliva therethrough. The method can optionally involve application of a backing strip or tray or the like to secure the other materials in place, but this is not a requirement where the composition of matter is sufficiently securing.
Abstract:
It is proposed that the Heisenberg Uncertainty Principle is a system-specific concept, and that using a reference Interference Pattern, or applying chaos concepts to the situation at the slits of a double slit system leads to the proposal that a photon or particle that contributes to a positive slope region in an interference pattern formed by a double slit system is more likely to have passed through the left slit of the double slit system, (as viewed from the source), and a particle or photon which contributes to a negative slope region of the interference pattern is more likely to have passed through the right slit thereof (again as viewed from the source). Further, an experiment comprising use of a laterally, (and/or perpendicular thereto), movable screen upon which particles impinge is proposed that, in the context of a double slit system, would allow verification of the proposal, and which would also, allow near-simultaneous measurement of particle position and momentum.
Abstract:
It is proposed that a particle or photon which contributes to a positive slope region in an interference pattern formed by a double slit system is, with certainty, more likely to have passed through the left slit of the double slit system, (as viewed from the photon or particle source), and a particle or photon which contributes to a negative slope region of the interference pattern is, with certainty, more likely to have passed through the right slit of the double slit system, (again, as viewed from the source of the photon or particle).
Abstract:
An approach to challenging the absolute nature attributed to the Heisenberg uncertainty principal in the context of data obtained from a double slit system, wherein the double slit system is applied at least once with a multiplicity of photons or particles to produce a reference interference pattern on a first screen, and applied a second time to determine where a single photon or particle impacts a second screen. Comparison of projections from each slit through the point of impact of the single photon or particle on the second screen, to the reference interference pattern on the first screen, provides insight to which slit the single photon or particle passed.
Abstract:
Disclosed is the use of a focused electromagnetic beam which is caused to impinge on the top surface of a tube shaped sample, to investigate a film coating on its inner surface during fabrication thereof and/or thereafter.
Abstract:
Disclosed are system for and method of analyzing substantially the exact same spot size on a sample system with at least two wavelengths for which the focal lengths do not vary more than within an acceptable amount.
Abstract:
Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.