公开(公告)号：US20190393370A1

公开(公告)日：2019-12-26

申请号：US16560505

申请日：2019-09-04

Applicant: KANEKA CORPORATION

Inventor： Katsunori Konishi ,  Kunta Yoshikawa ,  Hayato Kawasaki ,  Kunihiro Nakano

IPC: H01L31/0224 ,  H01L31/072 ,  H01L31/18

Abstract: A method for manufacturing a photoelectric conversion device, wherein the photoelectric conversion device includes a semiconductor substrate having a first conductivity-type region, a second conductivity-type region, and a boundary region on a first principal surface of a semiconductor substrate, the boundary region being in contact with and separating the first conductivity-type region and the second conductivity-type region, the method including: stacking a second conductivity-type semiconductor layer over the second conductivity-type region and the boundary region on the first principal surface of the semiconductor substrate; stacking an insulating layer over the second conductivity-type semiconductor layer in the boundary region; stacking a first conductivity-type semiconductor layer over the first conductivity-type region on the first principal surface of the semiconductor substrate and on the insulating layer; stacking an electrode layer on the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer; and forming a separation groove that separates the electrode layer.

公开(公告)号：US20190123221A1

公开(公告)日：2019-04-25

申请号：US16221076

申请日：2018-12-14

Applicant: KANEKA CORPORATION

Inventor： Katsunori Konishi ,  Kunihiro Nakano ,  Hayato Kawasaki ,  Kunta Yoshikawa

IPC: H01L31/0224 ,  H01L31/048 ,  H01L31/18

Abstract: A solar cell includes a semiconductor substrate, a first conductive layer, a second conductive layer, a first electrode, a second electrode, and an island-shaped conductive layer. The first conductive layer and the second conductive layer are disposed on one principal surface of the semiconductor substrate. The first electrode is disposed on the first conductive layer and the second electrode is disposed on the second conductive layer. The first electrode and the second electrode are electrically separated, and the island-shaped conductive layer is disposed between the first electrode and the second electrode.

公开(公告)号：US20170200839A1

公开(公告)日：2017-07-13

申请号：US15473000

申请日：2017-03-29

Applicant: Kaneka Corporation

Inventor： Kunihiro Nakano ,  Kunta Yoshikawa ,  Daisuke Adachi

IPC: H01L31/0224 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/022466 ,  C23C14/042 ,  C23C16/042 ,  C23C16/24 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/02366 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1884

Abstract: A solar cell is provided with an electrode layer on a photovoltaic conversion section including a crystalline silicon substrate. Deposition of the electrode layer is performed by a deposit-up method with a substrate being mounted in such a manner that an opening edge portion of a mask plate having an opening is in contact with the substrate. The opening edge portion of the mask plate has a tapered surface at a part that is in contact with first principal surface of the substrate, the tapered surface conforming to a deflection angle at a peripheral end of the substrate. A solar cell having a large effective area can be prepared by suppressing deposition of electrode layer on mask-covered region due to penetration.

公开(公告)号：US12107176B2

公开(公告)日：2024-10-01

申请号：US17647937

申请日：2022-01-13

Applicant: KANEKA CORPORATION

Inventor： Katsunori Konishi ,  Kunihiro Nakano

IPC: H01L31/075 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02363 ,  H01L31/075 ,  H01L31/18

Abstract: A back-contact solar cell having a first conductivity-type semiconductor layer in a first region on a back side of a semiconductor substrate, and a second conductivity-type semiconductor layer in a second region and the first region on the back side. In the first region, an intrinsic semiconductor layer and the first and second conductivity-type semiconductor layers are stacked successively on the back side. In the second region, the intrinsic semiconductor layer and the second conductivity-type semiconductor layer are stacked on the back side. In a boundary region between the first and second regions, an insulating layer, and the first and second conductivity-type semiconductor layers, are stacked successively on the back side, with the intrinsic semiconductor layer disposed between the layers and the back side. The insulating layer is interposed between the first conductivity-type semiconductor layer in the first region and the second conductivity-type semiconductor layer in the second region.

公开(公告)号：US11004995B2

公开(公告)日：2021-05-11

申请号：US16341848

申请日：2017-10-04

Applicant: KANEKA CORPORATION

Inventor： Kunihiro Nakano ,  Hisashi Uzu ,  Kenji Yamamoto

IPC: H01L31/054 ,  H02S40/20

Abstract: A photovoltaic device according to the present disclosure is provided with: a condensing optical system having chromatic aberration; a first photoelectric converter, which is arranged on an optical axis of the condensing optical system; and a second photoelectric converter, which is arranged on an outer peripheral side of the first photoelectric converter when viewed from an optical axis direction of the condensing optical system, and which has a bandgap lower than a bandgap of the first photoelectric converter, wherein the first photoelectric converter is arranged on an inner side of a rectangle that circumscribes a condensing region of absorbable longest-wavelength light determined based on the bandgap.

公开(公告)号：US10593820B2

公开(公告)日：2020-03-17

申请号：US15128360

申请日：2015-03-26

Applicant: KANEKA CORPORATION

Inventor： Kunihiro Nakano ,  Kunta Yoshikawa ,  Toru Terashita ,  Masafumi Hiraishi ,  Kenji Yamamoto

IPC: H02N6/00 ,  H01L31/042 ,  H01L31/043 ,  H01L31/0224 ,  H01L31/05 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/077 ,  H01L31/20

Abstract: In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

公开(公告)号：US20180294366A1

公开(公告)日：2018-10-11

申请号：US16002310

申请日：2018-06-07

Applicant: Kaneka Corporation

Inventor： Katsunori Konishi ,  Kunta Yoshikawa ,  Hayato Kawasaki ,  Kunihiro Nakano

IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/072

CPC classification number: H01L31/022441 ,  H01L31/072 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1804 ,  Y02E10/50 ,  Y02P70/521

Abstract: A photoelectric conversion device includes, on one principal surface of a semiconductor substrate, a first conductivity-type region, a second conductivity-type region, and a boundary region which is in contact with each of the first conductivity-type region and the second conductivity-type region to separate these two regions. A first conductivity-type semiconductor layer is disposed over the entire first conductivity-type region and extending over the boundary region. A second conductivity-type semiconductor layer is disposed over the entire second conductivity-type region and extending over the boundary region. An insulating layer is disposed over the entire boundary region. A first electrode is disposed over the entire first conductivity-type region and extending over the boundary region, and a second electrode is disposed over the second conductivity-type region. The second electrode is not disposed over a region where the first conductivity-type semiconductor layer is formed, and thus is separated from the first electrode.

公开(公告)号：US10008622B2

公开(公告)日：2018-06-26

申请号：US15561876

申请日：2016-03-10

Applicant: KANEKA CORPORATION

Inventor： Gensuke Koizumi ,  Daisuke Adachi ,  Kunihiro Nakano

IPC: H01L31/00 ,  H01L31/05 ,  H01L31/0747 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0224

CPC classification number: H01L31/0504 ,  H01L31/02008 ,  H01L31/02167 ,  H01L31/0224 ,  H01L31/022425 ,  H01L31/022433 ,  H01L31/022441 ,  H01L31/02245 ,  H01L31/022466 ,  H01L31/022475 ,  H01L31/04 ,  H01L31/05 ,  H01L31/0508 ,  H01L31/0516 ,  H01L31/0747 ,  H01L31/1884 ,  Y02E10/50 ,  Y02P70/521

Abstract: The solar cell includes: a first metal seed layer and a first plating layer provided on a first surface of a photoelectric conversion section; a second metal seed layer provided on a second surface of the photoelectric conversion section; and a third metal seed layer and a third plating layer provided on the lateral surface and the peripheral edge of the second surface of the photoelectric conversion section. The first metal seed layer is in electrical continuity with the third metal seed layer, while the second metal seed layer is in electrical non-continuity with the third metal seed layer. By supplying electricity to at least one of the first metal seed layer and the third metal seed layer, the first plating layer and the third plating layer are formed simultaneously.

公开(公告)号：US20220140162A1

公开(公告)日：2022-05-05

申请号：US17647937

申请日：2022-01-13

Applicant: KANEKA CORPORATION

Inventor： Katsunori KONISHI ,  Kunihiro Nakano

IPC: H01L31/0224 ,  H01L31/075 ,  H01L31/0236 ,  H01L31/18

Abstract: A back-contact solar cell having a first conductivity-type semiconductor layer in a first region on a back side of a semiconductor substrate, and a second conductivity-type semiconductor layer in a second region and the first region on the back side. In the first region, an intrinsic semiconductor layer and the first and second conductivity-type semiconductor layers are stacked successively on the back side. In the second region, the intrinsic semiconductor layer and the second conductivity-type semiconductor layer are stacked on the back side. In a boundary region between the first and second regions, an insulating layer, and the first and second conductivity-type semiconductor layers, are stacked successively on the back side, with the intrinsic semiconductor layer disposed between the layers and the back side. The insulating layer is interposed between the first conductivity-type semiconductor layer in the first region and the second conductivity-type semiconductor layer in the second region.

公开(公告)号：US11211519B2

公开(公告)日：2021-12-28

申请号：US17000226

申请日：2020-08-21

Applicant: KANEKA CORPORATION

Inventor： Ryota Mishima ,  Kunihiro Nakano ,  Katsunori Konishi ,  Daisuke Adachi ,  Takashi Kuchiyama ,  Kenji Yamamoto

IPC: H01L31/20 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/18

Abstract: The method for manufacturing a solar cell includes: forming a first semiconductor layer of first conductivity type on a surface of a semiconductor substrate; forming a lift-off layer containing a silicon-based material on the first semiconductor layer; selectively removing the lift-off layer and first semiconductor layer; forming a second semiconductor layer of second conductivity type on a surface having the lift-off layer and first semiconductor layer; and removing the second semiconductor layer covering the lift-off layer by removing the lift-off layer using an etching solution. The linear expansion coefficients of the semiconductor substrate and the lift-off layer satisfy the relational expression: the linear expansion coefficient of the lift-off layer