公开(公告)号：US10854767B2

公开(公告)日：2020-12-01

申请号：US15556469

申请日：2016-03-07

Applicant: KANEKA CORPORATION

Inventor： Hayato Kawasaki ,  Kunta Yoshikawa ,  Kunihiro Nakano ,  Katsunori Konishi ,  Kenji Yamamoto

IPC: H01L31/068 ,  H01L31/0747 ,  H01L31/20 ,  H01L31/18 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0352

Abstract: The solar cell includes an n-type semiconductor layer and a p-type semiconductor layer on a first principal surface of a crystalline silicon substrate. The n-type semiconductor layer is provided so as to extend over a part on a p-type semiconductor layer-formed region provided with the p-type semiconductor layer, and a p-type semiconductor layer non-formed-region where the p-type semiconductor layer is not provided. In a region where the n-type semiconductor layer is provided on the p-type semiconductor layer, a protecting layer is between the p-type semiconductor layer and the n-type semiconductor layer. The protecting layer includes: an underlying protecting layer that is in contact with the p-type semiconductor layer; and an insulating layer that is on the underlying protecting layer. The underlying protecting layer includes an intrinsic silicon-based layer or an n-type silicon-based layer.

公开(公告)号：US10777709B2

公开(公告)日：2020-09-15

申请号：US16294100

申请日：2019-03-06

Applicant: KANEKA CORPORATION

Inventor： Takashi Kuchiyama ,  Hironori Hayakawa ,  Hiroaki Ueda ,  Yuji Motohara ,  Kenji Yamamoto

IPC: H01L33/42 ,  G06F3/041 ,  C23C14/02 ,  C23C14/08 ,  C23C14/58 ,  G06F3/044 ,  H01L31/0224 ,  H01L31/0392 ,  C23C14/35

Abstract: Provided is a substrate with transparent electrode, which is capable of achieving both acceleration of crystallization dining a heat treatment and suppression of crystallization under a normal temperature environment. In the substrate with transparent electrode, a transparent electrode thin-film formed of a transparent conductive oxide is formed on a film substrate. An underlayer that contains a metal oxide as a main component is formed between the film substrate and the transparent electrode thin-film. The underlayer and the transparent electrode thin-film are in contact with each other. The transparent electrode thin-film is amorphous, and the base layer is dielectric and crystalline.

公开(公告)号：US10662521B2

公开(公告)日：2020-05-26

申请号：US15880470

申请日：2018-01-25

Applicant: KANEKA CORPORATION

Inventor： Hironori Hayakawa ,  Takashi Kuchiyama ,  Kenji Yamamoto

IPC: B32B15/04 ,  B32B17/06 ,  C23C14/34 ,  H05K1/09 ,  C23C14/08 ,  G06F3/044 ,  H05K3/16

Abstract: A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nm2 or more and the number of the continuous regions is 50/μm2 or more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.

公开(公告)号：US10353497B2

公开(公告)日：2019-07-16

申请号：US15551514

申请日：2016-02-18

Applicant: Kaneka Corporation

Inventor： Takahisa Fujimoto ,  Hitoshi Tamai ,  Kenji Yamamoto

IPC: G06F3/041 ,  B32B15/08 ,  H01B5/14 ,  B32B15/04 ,  B32B15/20 ,  G06F3/044 ,  H01B13/00

Abstract: The present invention provides a substrate with conductive layers, capable of improving both glare preventing properties and etching characteristics; a method for fabricating the same; and a substrate with touch-panel transparent electrodes. A substrate with conductive layers has, on at least one side of a transparent film substrate, a thin film underlayer, a metal oxide layer, and a first metal layer formed in this order. The thin film underlayer comprises nickel and copper or nickel oxide and copper oxide, the metal oxide layer comprises nickel oxide and copper oxide, and the first metal layer comprises of at least one of gold, silver, and copper. The substrate preferably satisfies the following relational expressions: [1] the thickness of the thin film underlayer is 20 nm or less; [2] the thickness of the metal oxide layer is 80 nm or less; and [3] the thickness of the thin film underlayer is equal to or less than the thickness of the metal oxide layer.

公开(公告)号：US10177705B2

公开(公告)日：2019-01-08

申请号：US15325503

申请日：2015-07-10

Applicant: KANEKA CORPORATION

Inventor： Hisashi Uzu ,  Mitsuru Ichikawa ,  Masashi Hino ,  Tomomi Meguro ,  Kenji Yamamoto

IPC: H02S40/20 ,  H01G9/20 ,  G02B6/00 ,  H01L51/44 ,  H01L27/30 ,  H02S40/22

Abstract: A composite solar cell comprises a spectroscopic element, a first photoelectric conversion element, and a second photoelectric conversion element. The first photoelectric conversion element is positioned in a first direction of the spectroscopic element and the second photoelectric conversion element is positioned in a second direction of the spectroscopic element. The first photoelectric conversion element is a perovskite-type photoelectric conversion element containing, in a light absorbing layer, a perovskite crystal structure material represented by a general formula R1NH3M1X3. A band gap of a light absorbing layer of the second photoelectric conversion element is narrower than the band gap of the light absorbing layer of the first photoelectric conversion element. The spectroscopic element preferentially outputs the short wavelength light of the incident light in the first direction and preferentially outputs the long wavelength light of the incident light in the second direction.

公开(公告)号：US09865762B2

公开(公告)日：2018-01-09

申请号：US14430540

申请日：2013-09-27

Applicant: KANEKA CORPORATION

Inventor： Tomomi Meguro ,  Kenji Yamamoto

IPC: H01L31/0224 ,  H01L31/077 ,  H01L31/0236 ,  H01L31/0392 ,  H01L31/0376 ,  H01L31/18 ,  H01L31/076 ,  H01L31/0368 ,  H01L31/075 ,  H01L31/0745 ,  H01L31/0747

CPC classification number: H01L31/077 ,  H01L31/022483 ,  H01L31/02366 ,  H01L31/03685 ,  H01L31/03762 ,  H01L31/03765 ,  H01L31/03921 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/075 ,  H01L31/076 ,  H01L31/1804 ,  H01L31/1888 ,  Y02E10/545 ,  Y02E10/548

Abstract: The thin-film photoelectric conversion device of the present invention includes: a transparent electroconductive film having zinc oxide as a main component; a contact layer; a photoelectric conversion unit having a p-type semiconductor layer, an i-type semiconductor layer and an n-type semiconductor layer in this order; and a back electrode layer, in this order, on one main surface of a substrate. The contact layer has an intrinsic crystalline semiconductor layer and a p-type crystalline semiconductor layer in this order from the substrate side, and the intrinsic crystalline semiconductor layer of the contact layer and the transparent electroconductive film are in contact with each other. The p-type crystalline semiconductor layer of the contact layer is preferably a layer having as a main component a silicon alloy selected from the group consisting of a silicon oxide; a silicon nitride; and silicon carbide.

公开(公告)号：US20160044778A1

公开(公告)日：2016-02-11

申请号：US14780529

申请日：2014-03-03

Applicant: KANEKA CORPORATION

Inventor： Tooru Irie ,  Takahisa Fujimoto ,  Takashi Kuchiyama ,  Hironori Hayakawa ,  Shinya Omoto ,  Kenji Yamamoto

IPC: H05K1/02 ,  H05K3/22 ,  H05K3/06 ,  H05K3/00 ,  H05K1/03 ,  H05K1/09

CPC classification number: H05K1/0274 ,  G06F3/044 ,  G06F2203/04103 ,  G06F2203/04112 ,  H05K1/0296 ,  H05K1/0326 ,  H05K1/09 ,  H05K3/0064 ,  H05K3/06 ,  H05K3/067 ,  H05K3/108 ,  H05K3/227 ,  H05K3/388 ,  H05K2201/0108 ,  H05K2201/0145 ,  H05K2201/0317 ,  H05K2201/09663 ,  H05K2201/0979

Abstract: Provided is a transparent conductive film including a transparent electrode layer composed of a patterned thin metal wire on at least one surface of a transparent film substrate. The line width of the wire is 5 μm or less. The wire includes a first metal layer and a second metal layer that is in contact with the first metal layer, in this order from a transparent film substrate side. Both of the first and second metal layers contain copper in an amount of 90% by weight or more. The total film thickness of the first and second metal layers is 150 to 1000 nm. The diffraction angle 2θ of the (111) plane of the second metal layer is less than 43.400° as measured using a CuKα ray as an X-ray source, and the first metal layer has crystal properties different from those of the second metal layer.

Abstract translation: 提供一种透明导电膜，其包括在透明膜基板的至少一个表面上由图案化的金属细线构成的透明电极层。 线的线宽为5μm以下。 导线包括从透明膜基板一侧依次与第一金属层接触的第一金属层和第二金属层。 第一和第二金属层都含有90重量％以上的铜。 第一和第二金属层的总膜厚度为150〜1000nm。 衍射角2＆thetas; 使用CuKα射线作为X射线源测定的第二金属层的（111）面的面积小于43.400°，第一金属层的结晶特性与第二金属层的晶体性质不同。

公开(公告)号：US20150345009A1

公开(公告)日：2015-12-03

申请号：US14653805

申请日：2013-12-18

Applicant: KANEKA CORPORATION

Inventor： Hironori Hayakawa ,  Takashi Kuchiyama ,  Kenji Yamamoto

IPC: C23C14/34 ,  C23C14/08 ,  H05K1/09

CPC classification number: C23C14/34 ,  B32B2307/412 ,  B32B2307/702 ,  B32B2457/208 ,  C23C14/086 ,  C23C14/3414 ,  G06F3/044 ,  G06F2203/04103 ,  H05K1/09 ,  H05K3/16 ,  H05K2201/0326 ,  H05K2201/10053 ,  H05K2203/1194

Abstract: A substrate with a transparent electrode which includes an amorphous transparent electrode layer on a transparent film substrate. When a bias voltage of 0.1 V is applied to the amorphous transparent electrode layer, the layer has continuous regions where a current value at a voltage-applied surface is 50 nA or more. Each of the continuous regions has an area of 100 nm2 or more and the number of the continuous regions is 50/μm2 or more. In one embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. In another embodiment, the layer has a tin oxide content of 6.5% or more and 8% or less by mass. With respect to the substrate with a transparent electrode according to the present invention, the transparent electrode layer may be crystallized in a short period of time.

Abstract translation: 具有透明电极的基板，其在透明膜基板上包括非晶透明电极层。 当向非晶体透明电极层施加0.1V的偏置电压时，该层具有电压施加表面的电流值为50nA以上的连续区域。 连续区域的面积为100nm 2以上，连续区域的数量为50 /μm2以上。 在一个实施方案中，该层的氧化锡含量为6.5％以上且8质量％以下。 在另一个实施方案中，该层的氧化锡含量为6.5％以上且8质量％以下。 对于根据本发明的具有透明电极的基板，透明电极层可以在短时间内结晶。

公开(公告)号：US10361325B2

公开(公告)日：2019-07-23

申请号：US15128360

申请日：2015-03-26

Applicant: KANEKA CORPORATION

Inventor： Kunihiro Nakano ,  Kunta Yoshikawa ,  Toru Terashita ,  Masafumi Hiraishi ,  Kenji Yamamoto

IPC: H02N6/00 ,  H01L31/042 ,  H01L31/043 ,  H01L31/0224 ,  H01L31/05 ,  H01L31/02 ,  H01L31/0216 ,  H01L31/0352 ,  H01L31/077 ,  H01L31/20

Abstract: In the solar cell module, a first solar cell and a second solar cell are stacked together with an electroconductive member interposed therebetween, such that a cleaved surface-side periphery on a light-receiving surface of the first solar cell overlaps a periphery on a back surface of the second solar cell. The first solar cell and the second solar cell each have: photoelectric conversion section including a crystalline silicon substrate; collecting electrode; and back electrode. At a section where the first solar cell and the second solar cell are stacked, the collecting electrode of the first solar cell and the back electrode of the second solar cell are electrically connected to each other by coming into contact with the electroconductive member. An insulating member is provided on a part of the cleaved surface-side periphery on the light-receiving surface of the first solar cell, where the collecting electrode is not provided.

公开(公告)号：US20180226529A1

公开(公告)日：2018-08-09

申请号：US15941818

申请日：2018-03-30

Applicant: Kaneka Corporation

Inventor： Hisashi Uzu ,  Masashi Hino ,  Mitsuru Ichikawa ,  Ryota Mishima ,  Tomomi Meguro ,  Kenji Yamamoto

IPC: H01L31/0725 ,  H01G9/20 ,  H01L51/44 ,  H01L31/028

CPC classification number: H01L31/0725 ,  H01G9/2009 ,  H01L27/302 ,  H01L31/028 ,  H01L51/4246 ,  H01L51/44 ,  Y02E10/549 ,  Y02P70/521

Abstract: A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.