Abstract:
A multi-junction photoelectric conversion device includes, in the following order from a light-receiving side: a first photoelectric conversion unit; an intermediate layer; and a second photoelectric conversion unit. The first photoelectric conversion unit includes: a first light absorbing layer comprising a perovskite-type crystal structure photosensitive material; a first charge transport layer on the light-receiving side of the first light absorbing layer; and a second charge transport layer on a rear side of the first light absorbing layer. The second charge transport layer is in contact with the intermediate layer. The second photoelectric conversion unit includes: a second light absorbing layer that is a crystalline silicon substrate; and a first conductive semiconductor layer that is in contact with the intermediate layer.
Abstract:
A method for producing a crystalline silicon solar cell with a high conversion efficiency and a precisely machined light-incident surface is provided, including a step of forming a first transparent electrode layer, a step of forming a back electrode layer containing copper as a major ingredient on a substantially entire area of a surface of a second main surface side, and the subsequent insulating step of forming an insulating region to remove a short circuit between at least the first transparent electrode layer of the first main surface side and at least a second transparent electrode layer and the back electrode layer of the second main surface side, irradiating an entire periphery of an outer peripheral part of the first main surface onto a position within 3 mm from an outer peripheral end face of a one conductivity-type single crystalline silicon substrate from the first main surface side.
Abstract:
The crystalline silicon-based solar cell includes a first intrinsic silicon-based thin-film, a p-type silicon-based thin-film, a first transparent electrode layer, and a patterned collecting electrode on a first principal surface of an n-type crystalline silicon substrate; and a second intrinsic silicon-based thin-film, an n-type silicon-based thin-film, a second transparent electrode layer, and a plated metal electrode on a second principal surface of the n-type crystalline-silicon substrate. On a peripheral edge of the first principal surface, an insulating region freed of a short-circuit between the first transparent electrode layer and the second transparent electrode layer is provided. The plated metal electrode is formed on an entire region of the second transparent electrode layer.
Abstract:
A method for manufacturing a multi-junction photoelectric conversion device includes forming a first electrode on a first photoelectric conversion unit including a first semiconductor layer as a photoelectric conversion layer, the first electrode including a plurality of patterned regions separated from one another by separation grooves; and eliminating a leakage existing in the first semiconductor layer by applying a reverse bias voltage between one of the patterned regions of the first electrode and a second photoelectric conversion unit comprising a second semiconductor layer as a photoelectric conversion layer. The application of the reverse bias voltage is performed while irradiating the second photoelectric conversion unit with light, generating a photocurrent in the second photoelectric conversion unit that is larger than a photocurrent in the first photoelectric conversion unit.
Abstract:
An electrode layer formation step of forming an electrode layer including the first electrode and a removal-target body on a first main surface side of a photoelectric conversion part; an insulating layer formation step of forming an insulating layer so as to cover at least the removal-target body; an opening formation step of forming an opening in the insulating layer by utilizing the removal-target body; and a metal layer formation step of forming a metal layer on the electrode layer through the opening of the insulating layer by a plating method are performed in this order. In the opening formation step, at least a part of the removal-target body is removed by irradiation by a laser beam, so that the opening of the insulating layer is formed.
Abstract:
The crystalline silicon-based solar cell according to the present invention includes a first intrinsic silicon-based thin-film, a p-type silicon-based thin-film, a first transparent electrode layer, and a patterned collecting electrode on a first principal surface of an n-type crystalline silicon substrate; and a second intrinsic silicon-based thin-film, an n-type silicon-based thin-film, a second transparent electrode layer, and a plated metal electrode on a second principal surface of the n-type crystalline-silicon substrate. On a peripheral edge of the first principal surface, an insulating region freed of a short-circuit between the first transparent electrode layer and the second transparent electrode layer is provided. The plated metal electrode is formed on an entire region of the second transparent electrode layer.
Abstract:
A photovoltaic device according to the present disclosure is provided with: a condensing optical system having chromatic aberration; a first photoelectric converter, which is arranged on an optical axis of the condensing optical system; and a second photoelectric converter, which is arranged on an outer peripheral side of the first photoelectric converter when viewed from an optical axis direction of the condensing optical system, and which has a bandgap lower than a bandgap of the first photoelectric converter, wherein the first photoelectric converter is arranged on an inner side of a rectangle that circumscribes a condensing region of absorbable longest-wavelength light determined based on the bandgap.
Abstract:
A method for manufacturing a multi-junction photoelectric conversion device includes forming a first electrode on a first photoelectric conversion unit including a first semiconductor layer as a photoelectric conversion layer, the first electrode including a plurality of patterned regions separated from one another by separation grooves; and eliminating a leakage existing in the first semiconductor layer by applying a reverse bias voltage between one of the patterned regions of the first electrode and a second photoelectric conversion unit comprising a second semiconductor layer as a photoelectric conversion layer. The application of the reverse bias voltage is performed while irradiating the second photoelectric conversion unit with light, generating a photocurrent in the second photoelectric conversion unit that is larger than a photocurrent in the first photoelectric conversion unit.
Abstract:
A solar cell wiring member for electrically connecting a plurality of solar cells includes a first principal surface, a second principal surface, and a plurality of first projected parts. The wiring member has a band shape, and the plurality of the first projected parts are located on a part of the first principal surface that is connected to a solar cell. Each of the plurality of the first projected parts has a triangular cross section, and the plurality of the first projected parts extend parallel to each other in a first extending direction The first extending direction is non-parallel to a longitudinal direction of the wiring member.
Abstract:
A composite solar cell comprises a spectroscopic element, a first photoelectric conversion element, and a second photoelectric conversion element. The first photoelectric conversion element is positioned in a first direction of the spectroscopic element and the second photoelectric conversion element is positioned in a second direction of the spectroscopic element. The first photoelectric conversion element is a perovskite-type photoelectric conversion element containing, in a light absorbing layer, a perovskite crystal structure material represented by a general formula R1NH3M1X3. A band gap of a light absorbing layer of the second photoelectric conversion element is narrower than the band gap of the light absorbing layer of the first photoelectric conversion element. The spectroscopic element preferentially outputs the short wavelength light of the incident light in the first direction and preferentially outputs the long wavelength light of the incident light in the second direction.